隨著物聯網及智慧型設備快速發展，人們對於光感測器的品質及需求增加。其中可見光感測技術已發展得非常成熟，主要以矽為感光材料。而可見光波長外的光偵測器，例如紫外光及紅外光影像感測器，通常需要引入其他材料基板，使得製作成本較高。因此，若能開發利用標準CMOS製程來製作、以矽為主的紫外光光偵測器，能與IC電路整合，大幅降低生產成本。
本論文提出將Al-SiO2-Al金屬-介電質-金屬結構的紫外光Fabry - Pérot濾波器與指叉式結構之橫向雙極性光電晶體 ( Interdigitated Lateral Bipolar Phototransistors ) 結合的設計與製程方式，藉以實現阻可見光紫外光濾波功能並有內建電流增益放大的光偵測器。我們成功抑制了可見光的穿透，並在紫外光波長350nm處，有最高的光響應，其光響應度為9.78E-2 (A/W)。

With the rapid development of the IoT (Internet of Things) and smart devices, People pay more attention to and demand more need for high quality optical sensors. In recent years, tremendous progress has been reported with silicon based devices in visible range. For nonvisible range, such as in ultraviolet and Infrared region, wide bandgap material and III-V semiconductors are usually adopted, which is expensive and incompatible. Therefore, we can develop a silicon-based ultraviolet photodetector using a standard CMOS process. It can be easily integrated with the IC circuit and significantly reduce production costs.
In this thesis, we propose a new design and fabrication method of Al-SiO2-Al (metal-dielectric-metal structure) visible-blind ultraviolet Fabry-Pérot bandpass filter, integrated with the current gain increment interdigitated lateral bipolar phototransistors. We successfully demonstrate suppression of visible light with the highest responsivity 9.78E-2 (A/W) at wavelength of 350 nm.

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