在電晶體體積持續微縮的趨勢下, 以矽晶圓為基礎的製程, 面對許多物理性與技術上的限制, 造成繼續微縮的困難。因此人們嘗試使用由下而上的構裝方式, 以各種奈米級分子取代矽材料, 來製作各種的奈米級電晶體。由於奈米碳管各項優異的特性, 使其相當有潛力成為下一世代電晶體的主角, 不過真的要能取代現今矽製程的電晶體, 必需製作出通道長度小於30 nm 以下的奈米碳管電晶體, 並了解在極短長度下, 奈米碳管的傳輸性質。
目前雖然有相當多關於奈米碳管電晶體的各項研究, 但由於製作極小間距電極的困難, 以往研究的奈米碳管電晶體通道長度皆大於10 nm 以上, 我們預期奈米碳管電晶體通道長度在10 nm 以下時, 因載子平均自由路徑遠大於通道長度及半導體性奈米碳管與兩端金屬接觸的蕭特基位障有可能重疊,將會產生與以往不同的電學特性。而實際上奈米碳管在極短的長度之下, 其傳輸機制到底為何呢? 這有待我們做更進一步的探討研究。
本論文研究的方向, 在先能實際製作出10 nm 以下的超短奈米碳管電晶體, 再量測電晶體的各種電流曲線, 以此做為建立超短奈米碳管電晶體傳輸機制的依據。在分析目前幾種主要製造奈米狹縫的技術後, 我們採用遮罩法來製造超短奈米碳管電晶體所需要的奈米狹縫電極, 利用五氧化二釩奈米纖維及單壁奈米碳管兩種不同特性的奈米線做為遮罩, 來製作出不同寬窄和性質的奈米狹縫單元。在實際的製作上, 我們設計了可一次大量製作出奈米狹縫單元的流程, 並且發展出可定向一維奈米線的技巧。大量製作出奈米狹縫單元後, 使用原子力顯微鏡及掃瞄式電子顯微鏡分別對其做結構性的掃瞄分析, 證明了我們成功地製作出奈米狹縫單元, 不但如此, 分析數據顯示出其擁有極高的良率。接著將奈米狹縫單元, 連接金屬導線製成超短奈米碳管電晶體, 在變溫下量測了14組以五氧化二釩奈米纖維遮罩法及13組以單壁奈米碳管遮罩法所製作的超短奈米碳管電晶體, 並分析所量測到的電流曲線, 電流曲線顯示出其有場調變的效應, 但必需先消除額外的大電阻, 方能探討更深入的傳輸機制。
最後對後續之研究工作做些建議且分析往後需注意改善的地方, 並展望我們製作奈米狹縫技術將來可能的運用。

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