高效率光波導為積體光學重要的基本元件，一種利用簡單的深蝕刻及氫鍛燒製程在Silicon-on-insulator(SOI)晶圓上所製作出的新型線波導，此新型線波導量測到傳播損耗及耦合損耗分別為1.26dB/cm、2.5dB/Coupler. 為了進一步以新型線波導為基本元件實現高度緊密的光積電路，利用多模干涉耦合器所具有的光分離與結合特性，且具有寬操作頻譜與極化的輸入光場不敏感的優點，並且在製程上有較大的可接受誤差範圍。在本論文，成功地將二維與三維的多模干涉耦合器(2-D and 3-D MMI couplers)、三維錐形光耦合器(3-D Taper couplers)、新型線波導(Silicon photonic wire) 在同步製程下利用矽原子表面遷移機制整合在同一晶片。在初步研究，將以分光比例為50:50與15:85作為研究。實驗結果，二維多模干涉耦合器設計分光比例50:50與15:85，在TE極化光場下，分別量測到分光比例為46:54與10:90，在TM極化光場下，分別量測到分光比例為48:52與13:87，並且在操作頻率的量測結果與BPM模擬分析有相同的趨勢。除此之外，對於三維多模干涉耦合器元件也有了初步的量測結果與分析。

A novel low-loss silicon photonic wire with 3-D taper couplers fabricated on silicon-on-insulator (SOI) by the deep etching and the thermal annealing processes was presented. The propagation loss and the coupler loss were measured to be 1.26dB/cm and 2.5dB/coupler [10][11]. In order to realize highly compact photonic integrated circuits based on silicon photonic wires, multimode interference (MMI) couplers were introduced for performing light splitting and combing due to the advantages of wide optical bandwidth, polarization independence and large fabrication tolerance. In this thesis, we have demonstrated monolithically integrated 2-D and 3-D MMI couplers with the novel silicon photonic wires via self-profile transformation [14]. The power splitting ratios of 50:50 and 15:85 were designed for preliminary study. For the 50:50 and 15:85 2-D MMI devices, the power splitting ratios were measured to be 46:54 and 10:90 for TE-polarized, and 48:52 and 13:87 for TM-polarized. The wide optical bandwidth according to the BPM simulation was also proven experimentally by measuring 2-D MMI devices. The preliminary measurement results for 3-D MMI couplers were also presented.

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