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| 研究生： |
李國榮 Kuo-Jung Lee |
|---|---|
| 論文名稱： |
1550 nm之共振腔發光二極體之研製與分析 Fabrication and Characterization of 1550 nm Resonant-Cavity Light-Emitting Diodes(RCLEDs) |
| 指導教授： |
吳孟奇
Meng-Chyi Wu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
| 論文出版年： | 2006 |
| 畢業學年度： | 94 |
| 語文別： | 中文 |
| 論文頁數： | 63 |
| 中文關鍵詞： | 共振腔 、1550 nm 、InGaAsP 、布拉格反射鏡 |
| 相關次數： | 點閱：3 下載：0 |
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本論文的主要研究是設計、製作、以及特性量測發光波段在1550 nm的共振腔發光二極體( Resonant Cavity Light Emitting Diode, RCLED )。RCLED 磊晶片的活性層是由厚度為5 nm 的In0.73Ga0.27As0.85P0.15量子井組成，放射波長峰值約在1530 nm 附近，上下夾著反射率大於99 % 的AlInAs / AlGaInAs 布拉格反射鏡。實驗結果顯示窗口尺寸為10 μm 的1550 nm RCLED 元件在20 °C、20 mA 時有順向偏壓2.1 V ，最大的光輸出功率130 μW 和最大的量子效率4.6 % 。注入電流增加與溫度上升所導致增益峰值紅移的變化量分別為0.08 nm/mA 以及0.4 nm/℃。從而可得到溫度與注入電流之關係為0.2 mA/℃。
In this thesis,we designed,fabricated and characterized the resonant-cavity light emitting diodes ( RCLED ) emitting at 1550 nm wavelength.The strained multi-quantum-well ( SMQW ) active region consisting of five 5 nm thick In0.73Ga0.27As0.85P0.15 quantum wells with an emission peak wavelength near 1530 nm,sandwiched between two AlInAs / AlGaInAs DBRs which yielding a reflectivity greater than of 99 %. The experimental results indicated that the 10−µm window diameters for the 1550 nm RCLEDs have a forward voltage (VF) of 2.1 V at a current of 20 mA at 20 °C,which the maximum light output power of 130 μW and highest external quantum efficiency of 4.6 %. The increases of injected current and temperature lead to a red shift at a rate of 0.08 nm/mA and 0.4 nm/℃ for the gain peak.From that we could get the relationship between temperature and injected current is 0.2 mA/℃.
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