本研究主要分成兩部分：
第一部份分三個子題,包括：
1.研究鈦沈積於結晶(001)矽上, 分佈於鈦矽非晶質界面中奈米初始微晶相在低溫環境的相變化情形
2.非均勻混合下的多層非晶質鈦矽的初始奈米微晶相生成的情形
3.常溫下均勻混合下的多層非晶質鈦矽的初始奈米微晶相生成的研究
2 nm以下厚度的奈米鈦矽多層薄膜結構將可以得到一個均勻的混合層, 並可利用高解析穿透式電子顯微鏡觀察富矽的高溫穩定相於室溫的環境即可產生高溫相的奈米微晶。
另一方面，在金屬與矽鍺合金之間夾一層適當厚度的非晶質二氧化矽。由本研究中可看出在此方法下，對於二矽化鈦金屬矽化物，可達到防止鍺偏析、降低矽化物生成溫度、促使界面平整、以及提高一維排列的良好成效。
自組裝(Self-assembled)奈米點亦為當前重要研究課題之一。矽鍺合金在成長過程中由於受到矽基材表面切割偏離(Miscut)的影響，以及應力的產生，造成表面形成一維波浪狀的層級會聚(Step Bunching)結構。本研究利用此一現象，以矽鍺合金表面作為模板，於其上成長奈米尺度的低電阻率金屬矽化物，所生成的矽化鎳奈米點不僅尺度小且均一具有一維的規則性排列。

The first part includes:
1. Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh vacuum deposited Ti thin films on (001) Si,
2. Auto correlation function analysis of phase formation in the initial stage of interfacial reactions of multilayered titanium-silicon thin films,
3. Formation of titanium silicides in well-mixed multilayered Ti-Si thin films at room temperature.
The second part is on self-assembled TiSi2 quantum dot arrays on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The formation of the one-dimensional ordered structure is attributed to the nucleation of TiSi2 nanodots on the surface undulations induced by step bunching on the surface of SiGe film. The step bunching is owing to the miscut of the wafers from normal to the (001)Si direction.

Chapter 1

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Chapter 2

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Chapter 3

[3.1] M. E. Alperin, T. C. Hollaway, R. A. Haken, C. D. Gosmeyer, R. V. Karnaugh, and W. A. Parmantie, “Development of the Self-Aligned Titanium Silicide Process for VLSI Applications,” IEEE Trans. Electron Devices ED-32, 141-149 (1985).
[3.2] J. R. Abelson, K. B. Kim, D. E. Mercer, C. R. Helms, R. Sinclair, and T. W. Sigmon, “Disordered Intermixing at the Platinum:Silicon Interface Demonstrated by High-resolution Cross-sectional Transmission Electron Microscopy, Auger Electron Spectroscopy, and MeV Ion Channeling,” J. Appl. Phys. 63, 689-692 (1988).
[3.3] L. J. Chen, I. W. Wu, J. J. Chu, and C. W. Nieh, “Effects of Backsputtering and Amorphous Silicon Capping Layer on the Formation of TiSi2 in Sputtered Ti Films on (001)Si by Rapid Thermal Annealing,” J. Appl. Phys. 63, 2778-2782 (1988).
[3.4] A. E. Morgan, E. K. Boardbent, K. N. Ritz, D. K. Sadana, and B. J. Burrow, “Interactions of Thin Ti Films with Si, SiO2, Si3N4, and SiOxNy under Rapid Thermal Annealing,” J. Appl. Phys. 64, 344-353 (1988).
[3.5] W. Lur and L. J. Chen, “Growth Kinetics of Amorphous Interlayer Formed by Interdiffusion of Polycrystalline Ti Thin-Film and Single-Crystal Silicon,” Appl. Phys. Lett. 54, 1217-1219 (1989).
[3.6] J. Y. Cheng and L. J. Chen, “Growth Kinetics of Amorphous Interlayers by Solid-State Diffusion in Polycrystalline Zr and Hf Thin Films on (111)Si,” J. Appl. Phys. 68, 4002-4007 (1990).
[3.7] T. L. Lee and L. J. Chen, “Interfacial Reactions of Ultrahigh Vacuum Deposited Yttrium Thin Films on (111)Si at Low Temperatures,” J. Appl. Phys. 73, 8258-8266 (1993).
[3.8] L. J. Chen, “Solid State Amorphization in Metal/Si Systems,” Mater. Sci. Engineering R 29, 115-152 (2000).
[3.9] W. Y. Hsieh, J. H. Lin, and L. J. Chen, “Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Hf and Cr Thin Films on (111)Si,” Appl. Phys. Lett. 62, 1088-1090 (1993).
[3.10] J. C. H. Spence, Experimental High Resolution Electron Microscopy, 2nd ed. (Oxford University Press, New York, 1988), p. 75.
[3.11] G. Y. Fan and J. M. Cowley, “Auto-Correlation Analysis of High Resolution Electron Micrographs of Near-Amorphous Thin Films,” Ultramicroscopy 17, 345-356 (1985).
[3.12] J. Frank, Computer Processing of Electron Microscope Images (Springer, Berlin, 1980) p. 187.
[3.13] M. H. Wang and L. J. Chen, “Phase Formation in the Interfacial Reactions of Ultrahigh Vacuum deposited Titanium Thin-films on (111) Si,” J. Appl. Phys. 71, 5918-5925 (1992).
[3.14] R. B. Schwarz and W. L. Johnson, “Formation of an Amorphous Alloy by Solid-State Reaction of Pure Polycrystalline Metals,” Phys. Rev. Lett. 51, 415-418 (1983).
[3.15] A. R. Miedema, P. F. de Chatel, and F. R. de Boer, “Cohesion in Alloys-Fundamentals of a Semi-Empirical Model,” Physica B 100, 1-28 (1980).
[3.16] I. J. M. M. Raaijmakers, P. H. Oosting and A. H. Reader, “a Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: the Phase Field,” Mater. Res. Soc. Symp. Proc. 103, 229-233 (1988).
[3.17] T. Kouzaki, S. Ogawa, and S. Nakamura, “HREM and Nano-Scale Microanalysis of the Titanium-Silicon Interfacial Reaction,” Mater. Res. Soc. Symp. Proc. 183, 111-115 (1990).
[3.18] R. W. Bene, “A Kinetic Model for Solid-State Silicide Nucleation,” J. Appl. Phys. 61, 1826-1833 (1987).
[3.19] K. Holloway, P. Moine, J. Delage, R. Bormann, L. Capuano, and R. Sinclair, “Structure and Thermodynamics of Amorphous Ti-Si Produced by Solid-State Interdiffusion,” Mater. Res. Soc. Symp. Proc. 187, 71-76 (1990).
[3.20] E. Ma, L. A. Clevenger, C. V. Thompson, and K. N. Tu, “Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer Films,” Mater. Res. Soc. Symp. Proc. 187, 83-88 (1990).
[3.21] M. A. Nicolet and S. S. Lau, in Materials and Process Characterization, edited by N.G. Einspruch and G.R. Larrabee (Academic, New York, 1983) p. 329.
[3.22] J.W. Mayer and S.S. Lau, Electronic Materials Science: for Integrated Circuits in Si and GaAs (Macmillan, New York, 1990) p. 276.
[3.23] S. M. Chang, H. Y. Huang, H. Y. Yang, and L. J. Chen, “Mechanism of Enhanced Formation of C54–TiSi2 in High-Temperature Deposited Ti Thin Films on Preamorphized (001)Si,” Appl. Phys. Lett. 74, 224-226 (1999).
[3.24] M. Okihara, N. Hirashita, K. Tai, M. Kageyama, Y. Harada and H. Onoda, “Microstructural Study on the C49-to-C54 Phase Transformation in TiSi2 Formed from Preamorphization Implantation,” J. Appl. Phys. 85, 2988- (1999).
[3.25] C.C. Tan, L. Lu and A. See and L. Chan, “Effect of Degree of Amorphization of Si on the Formation of Titanium Silicide,” J. Appl. Phys. 91, 2842-2846 (2002).
[3.26] H. Inui, Hashimoto, K. Tanaka, I. Tanaka, T. Misoguchi, H. Adachi and M. Yamaguchi, “Defect and Electronic Structures in TiSi2 Thin Films Produced by Co-Sputtering: Part 1: Defect Analysis by Transmission Electron Microscopy,” Acta Mater. 49, 83-92 (2001).
[3.27] G. Ottaviani, T. Tonini, D. Giubertoni, A. Sabbadini, T. Marangon, G. Queirolo, F. La Via, “Investigation of C49–C54 TiSi Transformation Kinetics,” Microelec. Eng. 50, 153-158 (2000)

Chapter 4

[4.1] J. R. Abelson, K. B. Kim, D. E. Mercer, C. R. Helms, R. Sinclair and T. W. Sigmon, “Disordered Intermixing at the Platinum:silicon Interface Demonstrated by High-resolution Cross-Sectional Transmission Electron Microscopy, Auger Electron Spectroscopy, and MeV Ion Channeling,” J. Appl. Phys. 63, 689-692 (1988).
[4.2] L. J. Chen, I. W. Wu, J. J. Chu and C. W. Nieh, “Effects of Backsputtering and Amorphous Silicon Capping Layer on the Formation of TiSi2 in Sputtered Ti Films on (001)Si by Rapid Thermal Annealing,” J. Appl. Phys. 63, 2778-2782 (1988).
[4.3] M. H. Wang and L. J. Chen, “Phase Formation in the Interfacial Reactions of Ultrahigh Vacuum deposited Titanium Thin-films on (111) Si,” J. Appl. Phys. 71, 5918-5925 (1992).
[4.4] W. Lur and L. J. Chen, “Growth Kinetics of Amorphous Interlayer Formed by Interdiffusion of Polycrystalline Ti Thin-Film and Single-Crystal Silicon,” Appl. Phys. Lett. 54, 1217-1219 (1989).
[4.5] G. Y. Fan and J. M. Cowley, “Auto-Correlation Analysis of High Resolution Electron Micrographs of Near-Amorphous Thin Films,” Ultramicroscopy 17, 345-356 (1985).
[4.6] J. Frank, Computer Processing of Electron Microscope Images (Springer, Berlin, 1980) p. 187.
[4.7] C. C. Tan, L. Lu and A. See and L. Chan, “Effect of Degree of Amorphization of Si on the Formation of Titanium Silicide,” J. Appl. Phys. 91, 2842-2846 (2002).
[4.8] J. C. Chen, G. H. Shen and L. J. Chen, “the Determination of Dominant Diffusing Species in the Growth of Amorphous Interlayer between Gd and Si Thin Films by a Mo Cluster Marker Experiment,” J. Appl. Phys. 83, 7653-7657 (1998).
[4.9] L. J. Chen, “Solid State Amorphization in Metal/Si Systems,” Mater. Sci. and Eng. R 29, 115-152 (2000).
[4.10] E. Ma, L. A. Clevenger, C. V. Thompson, and K. N. Tu, “Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer Films,” Mater. Res. Soc. Symp. Proc. 187, 83-88 (1990).
[4.11] I. J. M. M. Raaijmakers, P. H. Oosting and A. H. Reader, “a Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: The Phase Field,” Mater. Res. Soc. Symp. Proc. 103, 229-233 (1988).
[4.12] K. Holloway, P. Moine, J. Delage, R. Bormann, L. Capuano, and R. Sinclair, “Structure and Thermodynamics of Amorphous Ti-Si Produced by Solid-State Interdiffusion,” Mater. Res. Soc. Symp. Proc. 187, 71-76 (1990).

Chapter 5

[5.1] J. R. Abelson, K. B. Kim, D. E. Mercer, C. R. Helms, R. Sinclair and T. W. Sigmon, “Disordered Intermixing at the Platinum:silicon Interface Demonstrated by High-resolution Cross-Sectional Transmission Electron Microscopy, Auger Electron Spectroscopy, and MeV Ion Channeling,” J. Appl. Phys. 63, 689-692 (1988).
[5.2] L. J. Chen, I. W. Wu, J. J. Chu and C. W. Nieh, “Effects of Backsputtering and Amorphous Silicon Capping Layer on the Formation of TiSi2 in Sputtered Ti Films on (001)Si by Rapid Thermal Annealing,” J. Appl. Phys. 63, 2778-2782 (1988).
[5.3] M.H. Wang and L.J. Chen, “Phase Formation in the Interfacial Reactions of Ultrahigh Vacuum Deposited Titanium Thin-films on (111) Si,” J. Appl. Phys. 71, 5918-5925 (1992).
[5.4] W. Lur and L. J. Chen, “Growth Kinetics of Amorphous Interlayer Formed by Interdiffusion of Polycrystalline Ti Thin-Film and Single-Crystal Silicon,” Appl. Phys. Lett. 54, 1217-1219 (1989).
[5.5] G. Y. Fan and J. M. Cowley, “Auto-Correlation Analysis of High Resolution Electron Micrographs of Near-Amorphous Thin Films,” Ultramicroscopy 17, 345-356 (1985).
[5.6] J. Frank, Computer Processing of Electron Microscope Images (Springer, Berlin, 1980) p. 187.
[5.7] C. C. Tan, L. Lu, A. See and L. Chen, “Effect of Degree of Amorphization of Si on the Formation of Titanium Silicide,” Appl. Phys. Lett. 91, 2842-2846 (2002).
[5.8] J. M. Gibson and M. M. J. Treacy, “Diminished Medium-Range Order Observed in Annealed Amorphous Germanium,” Phys. Rev. Lett. 78, 1074-1077 (1997)
[5.9] S. L. Cheng, H. H. Lin, J. H. He, T. F. Chiang, C. H. Yu, L. J. Chen, C. K. Yang, D. Y. Wu, S. C. Chien, and W. C. Chen, “Evolution of Structural Order in Germanium Ion-Implanted Amorphous Silicon Layers,” J. Appl. Phys. 92, 910-913 (2002).
[5.10] J. C. Chen, G. H. Shen and L. J. Chen, “The Determination of Dominant Diffusing Species in the Growth of Amorphous Interlayer between Gd and Si Thin Films by a Mo Cluster Marker Experiment,” J. Appl. Phys. 83, 7653-7657 (1998).
[5.11] L. J. Chen, “Solid State Amorphization in Metal/Si Systems,” Mater. Sci. and Eng. R 29, 115-152 (2000).
[5.12] E. Ma, L. A. Clevenger, C. V. Thompson and K. N. Tu, “Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer Films,” Mater. Res. Soc. Symp. Proc. 187, 83-88 (1990).
[5.13] I. J. M. M. Raaijmakers, P. H. Oosting and A. H. Reader, “A Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: The Phase Field,” Mater. Res. Soc. Symp. Proc. 103, 229-233 (1988).
[5.14] K. Holloway, P. Moine, J. Delage, R. Bormann, L. Capuano and R. Sinclair, “Structure and Thermodynamics of Amorphous Ti-Si Produced by Solid-State Interdiffusion,” Mater. Res. Soc. Symp. Proc. 187, 71-76 (1990).

Chapter 6

[6.1] F.M. Ross, P.A. Bennett, R.M. Tromp, J. Tersoff, and M. Reuter, “Growth Kinetics of CoSi2 and Ge Islands Observed with in Situ Transmission Electron Microscopy,” Micron 30, 21-32 (1999).
[6.2] Po-lin Chen and Cheng-Tzu Kuo, “Self-Organized Titanium Oxide Nanodot Arrays by Electrochemical Anodization,” Appl. Phys. Lett. 82, 2796-2798 (2003)
[6.3] T. Thurn-Albrecht, J. Schotter, G. A. Kästle, N. Emley, T. Shibauchi, L. rusin-Elbaum, K. Guarini, C. T. Black, M. T. Tuominen and T. P. Russell, “Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates,” Science 290, 2126-2129 (2000).
[6.4] W. A. Lopes and H. M. Jaeger, “Hierarchical Self-Assembly of Metal Nanostructures on Diblock Copolymer Scaffolds,” Nature 414, 735-738 (2001).
[6.5] W. W. Wu, J. H. He, S. L. Cheng, S. W. Lee and L. J. Chen, “Self-Assembled NiSi Quantum-Dot Arrays on Epitaxial Si0.7Ge0.3 on (001)Si,” Appl. Phys. Lett. 83, 1836-1838 (2003)
[6.6] S. Sun, C. B. Murray, D. Weller, L. Folks, and A. Moser, “Monodisperse FePt Nanoparticles and Ferromagnetic FePt Nanocrystal Superlattices,” Science 287, 1989-1992 (2000).
[6.7] S. Yu. Shiryaev, F. Jensen, J. L. Hansen, J. W. Petersen, and A. N. Larsen, “Nanoscale Structuring by Misfit Dislocations in SixGeySi Epitaxial Systems,” Phys. Rev. Lett. 78, 503-506 (1997).
[6.8] W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, and H. H. Cheng, “Enhanced Growth of CoSi2 on Epitaxial Si0.7Ge0.3 with a Sacrificial Amorphous Si Interlayer,” Appl. Phy. Lett. 81, 820-822 (2002).
[6.9] J. H. Zhu, K. Brunner, and G. Abstreiter, “Two-Dimensional Ordering of Self-Assembled Ge Islands on Vicinal Si(001) Surfaces with Regular Ripples,” Appl. Phys Lett. 73, 620-622 (1998).
[6.10] C. Teichert, J.C. Bean, and M.G. Lagally, “Self-Organized Nanostructures in Si1-xGex Films on Si(001),” Appl. Phys. A 67, 675-685 (1998).
[6.11] K. Brunner, “Si/Ge Nanostructures,” Rep. Prog. Phys. 65, 27-72 (2002).
[6.12] I Berbezier, A Tonda and A Portavoce, “SiGe Nanostructures: New Insights into Growth Processes,” J. Phys. Condens. Matter 14, 8283-8331 (2002)