研究生: |
勞大耀 Lao, Da-Yao |
---|---|
論文名稱: |
單晶矽PERC太陽能電池之背面鈍化堆疊層最佳退火參數之研究 Study of Best Annealing Condition of Rear Side Passivation Stack Layer for Monocrystalline PERC Silicon Solar Cell |
指導教授: |
王立康
Wang, Li-Karn |
口試委員: |
甘炯耀
Gan, Jon-Yiew 陳昇暉 Chen, Sheng-Hui |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 光電工程研究所 Institute of Photonics Technologies |
論文出版年: | 2021 |
畢業學年度: | 109 |
語文別: | 中文 |
論文頁數: | 104 |
中文關鍵詞: | 太陽能電池 、單晶矽 、鈍化堆疊層 |
外文關鍵詞: | Solar cell, Monocrystalline, Passivation stack layer |
相關次數: | 點閱:3 下載:0 |
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背面鈍化堆疊層在PERC太陽能電池中扮演很重要的一個角色。Al2O3為一種同時兼具場效鈍化及化學鈍化的優異材料。本實驗將以氧化鋁作為鈍化層,並以氮化矽作為鈍化保護層覆蓋在鈍化層上方,兩種薄膜沉積後都會分別經過不同參數的退火,來找出使少數載子生命週期提升最大的參數。
本實驗使用電子束蒸鍍系統沉積一層鋁於背面,以臭氧氧化的方式將鋁氧化成氧化鋁。我們分別對蒸鍍厚度、氧化時間、退火溫度及退火時間做測試,找出蒸鍍3nm鋁、氧化20分鐘、700度退火60秒為最佳。藉由XPS量測可以得到Al2O3薄膜的元素組成,並以TEM量測知道Al2O3薄膜的厚度,再以C-V量測得到退火後鈍化層的負電荷密度。接著沉積氮化矽作為鈍化保護層後進行不同退火溫度及時間的二次退火,發現最佳退火溫度及時間為400度20分鐘,還能防止鈍化層衰退。最後以所有最佳參數製成之PERC太陽能電池達到最佳填充因子為76 %、轉換效率為17.093 %,比背部全面鋁的太陽能電池相比提升了0.329 %。
The rear side passivation stack layer plays an important role in PERC solar cells. Al2O3 is an excellent material with the features of both field-effect passivation and chemical passivation. In this experiment, aluminum oxide was first used as the passivation layer, and silicon nitride layer was used as the protection layer that covers the passivation layer. The two layers were annealed with different post deposition annealing conditions to find out the parameters that maximize the minority carrier lifetime.
In this experiment, an electron beam evaporation system was used to deposit a layer of aluminum on the back, and the aluminum was oxidized into aluminum oxide by ozone oxidation. We measured the minority carrier lifetime by varying deposition thickness, oxidation time, annealing temperature, and annealing time, and found that the best minority carrier lifetime occurred with the deposition of 3nm aluminum, 20 minutes of oxidation, and 60 seconds of annealing at 700 ℃. The elemental composition of the Al2O3 film was measured by XPS, and the thickness of the Al2O3 film was measured by TEM, and then the negative charge density of the passivation layer after annealing was measured by C-V measurement. Next, silicon nitride was deposited as a protection layer, and then were subjected to second annealing with different annealing temperatures and times. It was found that the optimal annealing temperature and time were 400 ℃ for 20 minutes, which can also prevent the passivation layer from degrading. Finally, the PERC solar cell made with all the best parameters achieves an optimal fill factor of 76 % and a conversion efficiency of 17.093 %, which is 0.329 % higher than that of Al-BSF.
參考文獻
[1] “再生能源發電概況’’, 台灣電力公司, Retrieved from https://www.taipower.com.tw/tc/page.aspx?mid=204
[2] C.D. Mickey,“Solar photovoltaic cells’’, Journal of Chemical Education, vol.58, pp. 418-423, May 1981
[3] S.R. Wenham and M.A. Green,“Silicon solar cells’’, Progress in Photovoltaics: Research and Applications, vol.4, pp. 5,Dec. 1996
[4] D.M. Chapin, C.S. Fuller, and G.L. Pearson,“A new silicon p-n junction photocell for converting solar radiation into electrical power”, Journal of Applied Physics, vol. 25, pp. 676,Jan. 1954
[5] “太陽能分類’’, 國家能源科技人才培育計畫, Retrieved from https://sites.google.com/site/ensatptd/tai-yang-guang-dian-fa-dian
[6] H. Fritzsche,“Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon’’, Solid State Communications, vol. 94, pp. 953-955,Mar. 1995
[7] M. Gratzel,“Dye-sensitized solar cells’’, Journal of Photochemistry and Photobiology C: Photochemistry Reviews, vol. 4, pp. 145-153,Jun. 2003
[8] J. Tsukamoto, H. Ohigashi, K. Matsumura,and A. Takahashi,“A Schottky-barrier type solar-cell using polyacetylene’’, Japanese Journal of Applied Physics, vol. 20, pp. 127-129,Feb. 1981
[9] M. Jeong, I.W. Choi,and E.M. Go,“Stable perovskite solar cells with efficiency exceeding 24.8% and 0.3-V voltage loss’’, Science, vol. 369, pp. 1615-1620,Sep. 2020
[10] A.W. Blakers, A. Wang, A.M. Milne, J. Zhao,and M.A Green,“22.8 % efficient silicon solar cell’’, Applied Physics Letters, vol. 55, pp. 1363-1365,Dec. 1989
[11] J. Zhao, A. Wang, and M.A. Green,“High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates’’, Solar Energy Materials and Solar Cells, vol. 65, pp. 429-435,Jan. 2001
[12] J. Zhao, A. Wang, and M.A. Green,“24% efficient PERL structure silicon solar cells’’, IEEE Conference on Photovoltaic Specialists, pp. 333-335,May 1990
[13] W.P. Mulligan,D.H. Rose, M.J. Cudzinovic, D.M. De Ceuster, K.R. McIntosh, D.D. Smith, and R.M. Swanson,“Manufacture of solar cells with 21% efficiency’’, SunPower Corporation, Retrieved from https://tayloredge.com/reference/Electronics/Photonics/HighEfficiencySolarCells.pdf
[14] M. Tanaka, M. Taguchi, T. Matsuyama1, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano,“Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer) ’’, Japanese Journal of Applied Physics, vol. 31, pp. 3518-3512,Nov. 1992
[15] T. Takahama, M. Taguchi, E. Maruyama,and S. Okamoto,“Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell ’’, IEEE Journal of Photovoltaics, vol. 4, pp. 1433-1435,Nov. 2014
[16] J. Szlufcik,J. Majewski,A. Buczkowski,J. Radojewski,L. Jedral,E.B. Radojewska,“Screen-printed titanium dioxide anti-reflection coating for silicon solar cells’’, Solar Energy Materials,vol. 18, pp. 241-252,Jul. 1989
[17] M.A. Green,A.W. Blakers, J. Shi, E.M. Keller, and S.R. Wenham,“19.1% efficient silicon solar cell’’, Applied Physics Letters,vol. 44, pp. 1163-1164,Apr. 1984
[18] M. Kerr,J. Schmidt, and A. Cuevas,“Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide’’, Progress in Photovoltaics: Research and Applications,vol. 8, pp. 529-536,Nov. 2000
[19] B. Vermang, F. Werner, W. Stals, and A. Lorenz ,“Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput si solar cell passivation’’, 37th IEEE Photovoltaic Specialists Conference,vol. 19,pp. 1144-1149,Feb. 2011
[20] S.M. Sze and M.K. Lee,“Semiconductor Devices Physics and Technology(3rd edition)’’, John Wiley & Sons, Inc., pp. 16
[21] “Optical coating”, University of Cambridge, Retrieved from https://www.doitpoms.ac.uk/tlplib/atomic-scale-structure/intro.php
[22] “半導體物理-固態量子理論導論”, Retrieved from http://120.101.8.4/lyhsu/post/..%5Cdatabase%5Cgrade%5C%E8%91%89%E6%98%87%E5%B9%B3%5Cchapter_3_EB_0311&0318.pdf
[23] T. India,“Insulators, Semi-conductors & Conductors”, Electronics Edx,
Retrieved from
https://electronicsedx.wordpress.com/2016/07/16/insulators-semi-conductors-conductors/
[24] A. Luque and S. Hegedus,“Handbook of Photovoltaic Science and Engineering”, John Wiley & Sons, Inc., pp. 71-72
[25] “半導體第三章”, Retrieved from
https://www.slideshare.net/cwtsenggg/ss-11198695
[26] S.M. Sze and M.K. Lee,“Semiconductor Devices Physics and Technology(3rd edition)’’, John Wiley & Sons, Inc., pp. 51
[27] S.M. Sze and M.K. Lee,“Semiconductor Devices Physics and Technology(3rd edition)’’, John Wiley & Sons, Inc., pp. 34
[28] “p–n junction”, Wikipedia, Retrieved from https://en.wikipedia.org/wiki/P%E2%80%93n_junction
[29] “大氣質量Air Mass (AM) ”, Enli Technology Company, Retrieved from
https://zh-tw.enlitechnology.com/show/air-mass-am1-5g-am1-5d-306249.htm
[30] K. de Croon “太陽能電池的基本原理及其結構”,Retrieved from https://slidesplayer.com/slide/15403059/
[31] J.P. Charles and M.A bdelkrim, “A practical method of analysis of the current-voltage characteristics of solar cells”, Solar Cells, vol. 4, pp. 169-178,Sep. 1981
[32] “太陽光模擬器基礎原理”, Enli Technology Company, Retrieved from https://www.enlitechnology.com/uploadfiles/402/product/SS-3A/Enli-Tech_%E4%B8%80%E4%B8%8B%E5%B0%B1%E6%87%82%EF%BC%81%E5%A4%AA%E9%99%BD%E5%85%89%E6%A8%A1%E6%93%AC%E5%99%A8%E5%8E%9F%E7%90%86%E7%B0%A1%E4%BB%8B.pdf
[33] B. Fischer, “ Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements”, Fachbereich Physik
,pp. 39
[34] D.L. Pulfrey, “MIS solar cells: a review”, IEEE Transactions on Electron Devices, vol. 25, pp. 1308-1317,Nov. 1978
[35] S.B. Chen and C.H. Lai, “High-density MIM capacitors using Al2O3 and AlTiOx dielectrics”,IEEE Electron Device Letters, vol. 23, pp. 185-187,May 2002
[36] S.M. Sze and M.K. Lee,“Semiconductor Devices Physics and Technology(3rd edition)’’, John Wiley & Sons, Inc., pp. 162
[37] S. Zhao,“Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors’’, Vanderbilt University, Retrieved from https://ir.vanderbilt.edu/bitstream/handle/1803/14063/Zhao.pdf;jsessionid=002F92B50B5CFAEE12189278798DD062?sequence=1
[38] S. Joonwichien,S. Simayi,K. Shirasawa,K. Tanahashi, and H. Takato,“Thermal treatment effects on flat-band voltage shift in atomic-layer-deposited alumina or aluminum oxide/silicon nitride passivation stacks’’, Energy Procedia, vol. 92, pp. 353-358,Aug. 2016
[39] G. Dingemans, W. Beyer, M.C.M. van de Sanden, and W.M.M. Kessels,“Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks’’, Applied Physics Letters, vol. 97,Oct. 2010
[40] C.H. Hsu and C.W. Huang,“Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing’’, Surface and Coatings Technology, vol. 358, pp. 968-975,Jan. 2019
[41] B. Hoex, J.J.H. Gielis,M.C.M. van de Sanden, and W. M. M. Kessels,“On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3’’, Journal of Applied Physics, vol. 104,Dec. 2008
[42] J.G. Fossum,“Physical operation of back-surface-field silicon solar cells’’, IEEE Transactions on Electron Devices, vol. 24, pp. 322-325,Apr. 1977
[43] M.F. Pervez and M.N.H. Mia,“Influence of different metals back surface field on BSF silicon solar cell performance deposited by thermal evaporation method’’, Advances in Energy and Power ,vol. 5, pp. 27-31,Jul. 2017
[44] D. Chen and W. Deng,“Preventing the formation of voids in the rear local contact areas for industrial-type PERC solar cells’’, 28th European Photovoltaic Solar Energy Conference and Exhibition,Sep. 2013
[45] X. Wang,M. Juhl, and M. Abbott,“Use of QSSPC and QSSPL to monitor recombination Processes in p-type silicon solar cells’’, Energy Procedia, vol. 55, pp. 169-178,Mar. 2014
[46] “電子束蒸鍍系統”,台灣半導體研究中心, Retrieved from http://140.110.219.65/docs/devices/CF/T21_A.doc
[47] “電漿輔助化學氣相沉積系統”,台灣半導體研究中心, Retrieved from
http://140.110.219.65/docs/devices/CF/T19_A.pdf
[48] “Spin coater low-k 材料旋塗機”,台灣半導體研究中心, Retrieved from http://140.110.219.65/docs/devices/CF/T12_A.pdf
[49] “晶粒等級圖案定義對準系統”,台灣半導體研究中心, Retrieved from http://140.110.219.65/docs/devices/CF/L20_A.pdf