摘要
本實驗可分為兩部分，第一部分為利用汞燈照光輔助增加SBT鐵電薄膜在低溫焦化熱處理時有機溶劑的揮發，在薄膜低溫熱處理的製程中，分別於室溫、150oC、以及400oC加入10、20及30分鐘照光的輔助，藉以研究照光對於鐵電薄膜電性、結晶行為以及微結構的影響。由FTIR分析發現，以汞燈照射SBT鐵電薄膜，確實可以幫助熱處理時有機物的揮發，並且由X-ray繞射證實薄膜在(200)方向的結晶比例有顯著提升。經汞燈照射的試片有較大的晶粒尺寸與較好的鐵電特性，然而卻有漏電流較大的缺點。從XPS的分析可知，SBT薄膜在熱處理後，可能因為結晶退火的氣氛中含有少量還原性氣氛，造成大量的鉍被還原成金屬態原子，而降低了薄膜的絕緣性，使漏電流變大，此現象在汞燈照射的試片中更為明顯。經過400oC在N2O氣氛下作後續熱處理10分鐘，可以使原本被還原的金屬鉍原子轉變為氧化態，使薄膜的絕緣性增加，而克服了照光試片的漏電流方面缺點。
第二部份實驗節錄於附錄中，使用與Si基板熱穩定性良好的Hf-silicate作為MIS結構中介電層的材料，以MOCVD鍍製不同厚度及不同(Hf/(Hf+Si))成分比例的Hf-silicate薄膜，探討在不同的熱處理條件下，對於MIS電容結構的電性影響。其次亦利用矽酸鉿作為MFIS電容結構的擴散阻絕層，結合具抗疲勞(Fatigue-Free)特性的SBT鐵電薄膜，探討不同條件的矽酸鉿對鐵電記憶體電性的影響。由實驗結果發現，MIS與MFIS兩種結構的電性皆無明顯的規律性，可能與所使用的MOCVD前趨溶液m.m.p.有關，其化學式為Hf[OC(CH3) 2CH2OCH3] 2 [OC(CH3)3]2，然而正確的原因與證據則需要更進一步的研究分析才能確定。

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