本研究主要利用互補型金氧半導體微機電系統技術(CMOS MEMS)提出了晶圓級(wafer-level)的製程平台方案與設計方法，該方法可完全相容於標準的金氧半導體之製程並可具備量產的潛力。
利用上述製程平台，本論文實現了一個CMOS MEMS電容式加速度計單晶片。其感測元件在垂直方向因殘餘應力造成之形變量低於0.2 μm。電路採用電容式切換式架構以達到低功率消耗與低直流漂移輸出偏壓。在 ±6 G之量測範圍內，加速度計的靈敏度為191 mV/G，非線性度為1.07 %。在100-Hz 1-G正弦驅動加速度力作用下，其量測噪聲雜訊約為354 μG/Hz1/2。在27 °C下，量測之輸出漂移電壓約為100 mV。在85°C溫度內，輸入0 G時之加速度計輸出溫度係數約為0.94 mV/°C。
本論文亦實現了一個CMOS MEMS電容式共振器單晶片。該共振器的振動頻率為116 kHz。本共振器在60V操作電壓下，其品質因子在常壓(1 atm)與真空(0.07 Torr)下量測分別約為332與930。該共振器搭配外部運算放大器進行相位與增益的補償，並在電路板上實現了CMOS MEMS的振盪器，該振盪頻率為116 kHz，1-kHz的相位雜訊則為 -104 dBc/Hz。此外，我們也利用微機電後製程設計製作了高品質因子的CMOS MEMS電感元件，其品質因子相較CMOS電感元件提升了88%。我們將該CMOS MEMS電感元件應用於一5.8 GHz壓控振盪器內以取代傳統的CMOS電感元件，其電路之相位雜訊可提升約5dB。

This thesis proposes wafer-level complementary metal oxide semiconductor (CMOS) micro-electro-mechanical systems (MEMS) processes whose steps are fully compatible with standard CMOS process and have the potential for mass production.
A monolithic capacitive accelerometer is proposed by using the wafer-level CMOS MEMS process. The out-of-plane deflection resulted from the vertical stress gradient over the whole device is under 0.2 μm. The sensing circuit topology adopts switched capacitors for achieving a low power consumption and a low output offset voltage. With the sensing range of ±6 G, the sensitivity of the accelerometer is 191 mV/G, and the nonlinearity is 1.07 %. The measured output noise floor is 354 μG/Hz1/2. The measured output offset voltage is about 100 mV at 27 °C, and the zero-G temperature coefficient of the accelerometer output is 0.94 mV°C−1 below 85 °C.
A monolithic capacitive CMOS MEMS resonator is also proposed in this thesis. The measured resonator frequency is 116 kHz with a quality factor of 332 at 1 atm. The quality factor is raised to 930 at 0.07 Torr with a DC bias of 60 V. A CMOS MEMS oscillator is implemented with gain and phase compensations using an off-chip op-amp in printed circuit board. The oscillation frequency is 116 kHz and the phase noise at a 1-kHz offset is -104 dBc/Hz. In addition, a high quality-factor CMOS MEMS inductor is also fabricated with the post-CMOS MEMS process, which shows an improvement of 88% comparing to a CMOS inductor. The CMOS MEMS inductor is implemented in a 5.8 GHz voltage controlled oscillator, which improves 5 dB in phase noise.

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