在資訊發達的時代裡，開發具有更高密度的磁紀錄元件是必然的趨勢。許多研究者發現陣列式磁性奈米金屬線在磁記錄元件中有其應用之相當潛能。而製備陣列式磁性奈米線之方法很多，電化學沉積法具有一些其它技術所沒有的優點，例如製程簡單、成本低、可複製性高、損失少及污染少，尤其藉由改變電位、溶液組成等變因可有效控制結晶的形狀以及晶格成長方向等特點。而模板法具高度規則性，因此本研究採用電化學沉積法搭配模板使用來作為製備磁性奈米線陣列
之主要方法。
本研究以自製陽極氧化鋁膜(AAO)來作為模板，並搭配成長過程中施加外加磁場，擬成長大範圍的規則排列鎳鐵合金之奈米線陣列，由於鎳鐵合金為軟磁材料，而軟磁材料具有低矯頑力，預期其產品磁性質可由外加磁場調控。在自製陽極氧化鋁模板成果上，已可成功製備出孔洞為50nm 之陽極氧化鋁模板，而在成長材料的過程中搭配外加磁場的施予的研究上，由磁滯曲線可發現成長過程中施加外加磁場與否對於所製備出的鎳鐵合金奈米線陣列的磁性質是有影響的。
此外，本實驗亦使用模板法，於同時含有磁性及非磁性之鹽類先驅物之電解液中，以電化學沉積法方式在外加磁場引導下成功地單一步驟製備出50nm 核殼磁性-非磁性之奈米線陣列。

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