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研究生： 魏大華
Da-Hua Wei
論文名稱： 鐵/鉑磊晶多層膜之磁性質及微結構研究
Magnetic Properties and Microstructure of Epitaxial Fe/Pt Multilayers
指導教授： 金重勳
Tsung-Shune Chin
姚永德
Yeong-Der Yao
口試委員:
學位類別： 博士
Doctor
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2005
畢業學年度： 93
語文別： 英文
論文頁數： 173
中文關鍵詞： 分子束磊晶 、鐵/鉑 、磁翻轉行為 、銀拴固層 、氧化物插入層
外文關鍵詞： molecular beam epitaxy, Fe/Pt, magnetization reversal behavior, Ag pinning layer, Oxide insert layer
相關次數： 點閱：2  下載：0 
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    • 本論文利用分子束磊晶技術在氧化鎂(001)基板上製備垂直磁化鐵-鉑多層膜，探討其結構、表面形貌及磁性質。厚度效應藉由增加膜厚來系統化的控制薄膜形貌，從顆粒到連續狀，研究磁翻轉機制與表面形貌的關係。結果顯示：隨膜層厚度增加，磁翻轉過程由Stoner-Wohlfarth旋轉主導之模式偏移向磁壁運動模式。
    藉由鉑及鐵緩衝層來研究應變效應對鐵-鉑合金薄膜序化程度的影響。鉑緩衝層導致張應變使鐵-鉑薄膜在320 oC序化，然而鐵緩衝層會完全擴散進鐵-鉑薄膜內，使鐵-鉑薄膜改變為富鐵的組成，造成序化度的降低。
    我們首次發現在鐵-鉑薄膜內對稱性導入銀拴固複層，在相同總厚度下效果遠遠大於單一銀拴固層。此方法能大幅增加鐵-鉑薄膜的矯頑磁力，是由於對稱性拴固層能造成更均勻的拴固點分佈而抑制磁壁的位移。藉由銅頂層覆蓋於鐵-鉑薄膜的方式，不僅提昇薄膜序化度，而且降低晶粒間的交互作用力，導致鐵-鉑薄膜矯頑磁力的增加。
    氧化物插入層效應研究，是藉由導入氧化鎂及二氧化矽插入層於鐵-鉑薄膜內，達到抑制晶粒成長及磁性顆粒隔絕的目的。此方法能成功地減低晶粒尺寸及抑制晶粒間的交互作用力。

    This work has focused on the study of structure, morphology, and magnetic properties of the perpendicularly magnetized Fe/Pt epitaxial films on MgO (001) substrate by using the molecular beam epitaxy technique. We systematically controlled film morphology from isolated to continuous states with increasing film thickness to study the relationship between the morphology and magnetization reversal processes. The dominant magnetization reversal was found to change from Stoner-Wohlfarth rotation type to a domain-wall motion type as increasing film thickness. The Pt and Fe buffer layers were used to investigate the strain effect on the ordering of FePt films. The Pt buffer layer induces tensile strain that leads to lower ordering temperature of FePt films at 320 oC. Due to the full diffusion of Fe buffer layer into FePt films forming Fe-rich off-stoichiometric composition, the degree of chemical ordering is reduced. We first found that the insertion of symmetric Ag pinning layers (APL) into FePt films effectively enhances the coercivity much better than a single APL of the same total thickness. That is due to the relatively uniform-distributed defects than that of a single APL induced pinning effects to impede domain wall movement. A Cu layer on top of the FePt films not only promotes the chemical ordering but also reduces the intergranular exchange coupling to cause the coercivity enhancement. We aimed to reduce the grain size via introducing the MgO and SiO2 insert layers into Fe/Pt films for magnetic isolation. The methods successfully suppressed the grain growth of FePt films leading to decrease the coupling strength between grains.

    Abstract Ⅰ Abstract（Chinese） Ⅱ Acknowledgement Ⅲ Contents Ⅳ List of Figures VⅢ List of Symbols XXI Chapter 1 Introduction 1 1.1 Motivation 2 1.2 Outline of the dissertation 3 Chapter 2 Background 5 2.1 Uniaxial magnetic anisotropy (Ku) 5 2.1.1 Origin of uniaxial magnetic anisotropy 6 2.1.2 Energy of magnetic anisotropy (E) 6 2.2 Thermal stability factor (KuV/KbT) 7 2.3 Properties of FePt 10 2.4 Chemical-order parameter (S) 11 2.5 Methods to lower ordering temperature 11 2.5.1 Mono-atomic and multi- layers deposition 12 2.5.2 Ion irradiation 12 2.5.3 Addition of a third element 13 2.5.4 Off-stoichiometric deposition 15 2.5.5 Buffer layer 15 2.5.6 Annealing conditions 17 2.5.6 (a) Forming gas: Air, N2, H2 17 2.5.6 (b) Applied magnetic field 18 2.5.7 Dynamic stress 18 2.6 Methods to enhance coercivity-the pinning effect 19 2.7 Nanocomposite films 21 2.8 Methods to promote perpendicular magnetic anisotropy 23 2.9 Magnetization reversal mechanisms 25 Chapter 3 Experimental Processes and Techniques 26 3.1 Deposition techniques of multilayers 26 3.1.1 MBE Eiko EL-10A system 26 3.1.2 Reflection high-energy electron diffraction 27 3.2 Deposition processes of multilayers 29 3.2.1 Preparation of MgO substrate 29 3.2.2 Formation of Pt (002) buffer layer 30 3.2.3 Fabrication of Fe/Pt multilayers 31 3.3 Experimental and analysis technique 32 Chapter 4 Thickness Effects of Fe/Pt Multilayers 33 4.1 Perpendicularly magnetized FePt (001) films 34 4.1.1 Introduction 34 4.1.2 Thin film fabrication 35 4.1.3 Results and discussion 35 4.1.4 Summary 41 4.2 In-plane-magnetized FePt (110) films 42 4.2.1 Introduction 42 4.2.2 Thin film fabrication 43 4.2.3 Results and discussion 43 4.2.4 Summary 47 Chapter 5 Effects of Buffer Layer 48 5.1 Introduction 49 5.2 Thin film fabrication 50 5.3 Results and discussion 50 5.3.1 Film structure 50 5.3.2 Microstructure 54 5.3.3 Magnetic properties 55 5.4 Summary 57 Chapter 6 Effects of Pinning layers 59 6.1 Effect of Ag pinning layer (APL) 60 6.1.1 Introduction 60 6.1.2 Thin film fabrication 61 6.1.3 Results and discussion 61 6.1.4 Summary 67 6.2 Effect of Cu top layer 68 6.2.1 Introduction 68 6.2.2 Thin film fabrication 69 6.2.3 Results and discussion 69 6.2.4 Summary 73 Chapter 7 Effects of Inserted Oxide layers 74 7.1 Effect of MgO insert layer 75 7.1.1 Introduction 75 7.1.2 Thin film fabrication 76 7.1.3 Results and discussion 76 7.1.4 Summary 80 7.2 Effect of SiO2 insert layer 81 7.2.1 Introduction 81 7.2.2 Thin film fabrication 82 7.2.3 Results and discussion 83 7.2.4 Summary 87 Chapter 8 Conclusions 88 Suggestions of future works 91 References 92 Publications List 172

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