透明導電氧化物(Transparent Conducting Oxide, TCO)，是同時具備高可見光穿透率與高導電度的一種材料。目前以n-type導電性為主。主要應用於光電元件例如：太陽能電池、平面顯示器、觸控面板等等的透明電極與壓電基板的部分。其實TCO還有更多應用的空間，例如製作成透明p-n二極體、三極體、甚至進一步組合成全透明各式電子元件。若要達成這些應用，p-type TCO在可見光穿透率與導電度上，皆必須能與n-type相銜接匹配。
本實驗使用射頻磁控濺鍍系統(RF magnetron sputtering system)，以N2O、N2兩種氣體氮源，採用鋁-氮共摻雜(co-doping of Al and N)的方式，在玻璃基板(glass substrate)上，鍍製膜厚控制在280nm以下的p-type與n-type ZnO薄膜，並比較兩種不同氮源對薄膜電學性質影響。除此之外並加入鎂離子(Mg2+)，調整Mg2+成分比，鍍製p-type 與n-type MgxZn1-xO薄膜，比較不同Mg成分比(x=0~x=0.05)薄膜間在微結構、電學與光學性質上的差異。最後並嘗試製作MgxZn1-xO(x=0、x=0.025) p-n二極體(ZnO homojunction diode)，藉由I-V量測結果顯示二極體結構有達成。

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