本研究目的是先利用田口氏實驗規劃法找出於非平衡磁控濺鍍系統中氮化釩薄膜製程之優化條件，並進一步由田口氏實驗規劃法優化之製程參數進行細調之單因子實驗，其中，單因子實驗亦探討了最敏感的製程參數對薄膜的結構與性質之影響。氮化釩薄膜利用非平衡磁控濺鍍系統在不同製程條件下鍍覆於矽(100)基板。在非平衡磁控濺鍍系統中，選定基板偏壓、氮氣流量、基板溫度和基座轉速為四組主要優化鍍膜製程之參數。在優化參數過程中，選用薄膜之硬度和電阻率做為優化性質之指標，並在薄膜鍍覆完成後，利用平均值分析(ANOM)和變異數分析(ANOVA)找出影響薄膜性質之最敏感製程參數及預測優化之鍍膜製程條件。經由統計分析之結果得知，影響薄膜硬度之最主要的製程參數為基板偏壓而影響薄膜電阻率之最主要的製程參數為基板偏壓和氮氣流量，並由結果顯示，在田口實驗中，電阻率相較於硬度為較好之特性指標。由田口實驗規劃法得到具有最低電阻率氮化釩薄膜的優化製程條件為: 基板偏壓為-90 V、氮氣流量為3 sccm、基板溫度為300°C和基座轉速為20 rpm。進一步將得到最小電阻率之優化製程條件，利用細調氮氣流量之一次因子實驗優化製程，所得之優化條件變為: 基板偏壓為-90 V、氮氣流量為2.5 sccm、基板溫度為300°C和基座轉速為20 rpm。依據所得到之最佳化製程條件，成功鍍覆出具有高硬度和低電阻之氮化釩薄膜於矽(100)基板上。此外，在一次因子實驗中亦探討氮氣流量對氮化釩結構與性質之影響，結果顯示薄膜的織構轉換由動力學主導，而結晶性為影響氮化釩薄膜硬度、殘餘應力和電阻率的最主要因素。

The purpose of this study were to find the optimum conditions for the deposition of VN thin film using Taguchi DOE method, and the attained parameters were further refined by conducting single-variable experiments, where the effect of the most sensitive processing parameter on the structure and properties of VN thin films was investigated. VN thin films were deposited on Si (100) substrates by unbalanced magnetron sputtering (UBMS) with different deposition parameters. Four major processing parameters of an UBMS system, including substrate bias, nitrogen flow rate, substrate temperature and substrate rotational speed, were selected for optimizing the deposition process. Hardness and electrical resistivity of thin films were chosen as the indexes of the property optimization. After deposition, the analysis of mean (ANOM) and analysis of variance (ANOVA) were carried out to assess the sensitive parameters and predict the optimum conditions. Based on the statistical analysis, the most sensitive parameter for hardness of the deposition process was substrate bias and those for electrical resistivity were substrate bias and nitrogen flow rate. In addition, the results showed that electrical resistivity was a better property than hardness for Taguchi experiment. From the Taguchi DOE method, the optimum conditions for the minimum electrical resistivity of VN thin film are: substrate bias = -90 V, nitrogen flow rate = 3 sccm, substrate temperature = 300°C, and substrate rotational speed = 20 rpm. Further optimization of the deposition process was conducted by a single-variable experiment with refining nitrogen flow rate based on the optimum conditions from Taguchi method for the minimum electrical resistivity. The optimum conditions of VN thin film became: substrate bias = -90 V, nitrogen flow rate = 2.5 sccm, substrate temperature = 300°C, and substrate rotational speed = 20 rpm. Using the optimum deposition conditions, VN films on Si (100) substrates with high hardness and low electrical resistivity were successfully produced. Furthermore, the effect of the nitrogen flow rate on the structure and properties of VN thin films was also investigated. The results of single-variable experiment indicated that the texture transition of the VN thin films may be mainly affected by kinetics, and crystallinity plays an important role in the hardness, residual stress, and electrical resistivity of the VN thin films.

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