在本論文中，主要研究目的為延續學長的研究，將 Cu(In,Al)Se2太陽能電池效率提升，在實驗過中分別利用射頻及直流濺鍍機沈積Cu-In-Al(比例為 0.9:0.85:0.15)合金靶前驅物，比較並分析在同樣的硒化參數下，Cu(In,Al)Se2 吸收層薄膜特性。由於 Cu(In,Al)Se2與Mo介面潔淨度及 Cu(In,Al)Se2 薄膜特行的分析結果選擇使用直流濺鍍機沈積前驅物，再調整不同的前驅物沈積條件(背景壓力)、硒化溫度、硒化時間、硒粉末重量等因素對於 Cu(In,Al)Se2薄膜做特性的分析。在實驗過程中發現當背景壓力在6.8×10^(-7)Torr以下前驅物的特性較佳，且硒化溫度在530oC以及20分鐘的硒化時間，在 XRD scan 以及 Raman Spectrum 的分析下 Cu(In,Al)Se2有較佳的薄膜特性。加入鋁 (Al)在Cu(In,Al)Se2和Mo之間改善接面黏著性的問題，並加入i-ZnO在CdS和Al:ZnO 之間改善開路電壓以及並聯電阻，最後使用E-Gun沈積鋁(Al)作為前電極增並增加電子收集的能力。
在此次研究中，達到最好的效率為2.25%，其開路電壓(Voc)為0.24V，短路電流(Jsc)為25.69mA/cm^(2)，填充因子(F.F.)為0.36。

The main purpose of this research is to improve the efficiency of Cu(In,Al)Se2 solar cells by optimizing the selenization process for Cu(In,Al)Se2 absorber layer. We analyzed the quality of the Cu(In,Al) 〖Se〗_2 films obtained by RF and DC sputter methods using alloy target precursor of Cu-In-Al alloy target with ratio of components (Cu:In:Al) 0.9:0.85:0.15. Same process parameters are used for the selenization of DC sputtered and RF sputtered Cu-In-Al precursor films. DC sputtered Cu-In-Al precursor layer gave rise to better quality Cu(In,Al)Se2 absorber layer after selenization process with better interface between Cu(In,Al)Se2 and Mo layers than in the case of RF sputtered. This provides the advantage of depositing Cu-In-Al precursor layer just after depositing Mo back contact layer in the same DC sputter chamber as an in-line process. Various deposition conditions such as base pressure, selenization process duration, temperature and amount of selenium powder are varied to optimize the process conditions to obtain device quality Cu(In,Al)Se2 films.
Finally from the XRD scan and Raman Spectrum analysis we realized that the best Cu(In,Al)Se2 absorber layer can be obtained with a background pressure of 6.8×10^(-7) Torr the selenization duration temperature of 530oC, and the selenization duration of 20 minutes at the heating rate of 50oC/min. And we also deposited Aluminum to improve the structure between the Cu(In,Al)Se2 and Mo adhesion, and added i-ZnO layer between CdS and Al:ZnO layers to improve the open circuit voltage (Voc)and the shunt resistance (R_sh). E- Gun was used to deposit Aluminum as the front electrode to increase the electron collection efficiency in the Cu(In,Al) 〖Se〗_2 solar cell.
The solar cell fabricated with the best Cu(In,Al)Se2 absorber layer showed an efficiency of 2.25% with an open circuit voltage(Voc)of 0.24V, short-circuit current (Jsc) of 25.69mA/cm^(2)and the fill factor (F.F.) of 0.36 for the Cu(In,Al)Se2 solar cell.

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