研究生: |
廖建誠 Liao, Chien-Cheng |
---|---|
論文名稱: |
單晶矽埋入式電極太陽能電池之製作 Fabrication of Single Crystalline Silicon Solar Cells with Buried-Contact Structure |
指導教授: |
王立康
Wang, Li-Karn |
口試委員: |
何文章
Ho, Wen-Jeng 張正陽 Chang, Jeng-Yang |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 光電工程研究所 Institute of Photonics Technologies |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 中文 |
論文頁數: | 44 |
中文關鍵詞: | 埋入式 |
外文關鍵詞: | Buried-Contact |
相關次數: | 點閱:2 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
近年來因能源需求與日俱增,全世界都在找尋可用之新替代能源,加上全球各國對綠色能源大力的提倡,使得太陽能電池被大量研究與開發,使現今提升太陽能電池效率之結構與方法也越來越多,為了降低製造成本,本實驗多採用印刷方式來減低製作太陽能電池,以達成可大量製作與成本的降低。
本實驗主要分成兩大部分,第一部分利用印刷方式先定義出電極區域,再利用酸蝕刻達成在電極區內重摻雜、非電極區內輕摻雜,再利用印刷的方式在正面印刷銀漿,而於矽晶片背面印刷鋁漿,製作出低成本之選擇性太陽能電池,此結構可以有效的提升短波長之光子吸收,以提升太陽能電池之效率。第二部分在於定義出的電極區域內,使用45% KOH在80℃下進行蝕刻,蝕刻出30um深的溝槽,此結構可以提升太陽能電池在長波段之載子收集率,以提升電流與填充因子,製作出埋入式電極太陽能電池(buried contact solar cell ,BSCS) 。
參考文獻
[1] 林明獻,“太陽能電池技術入門”,全華圖書股份有限公司,2009
[2] D.M. Chapin, C.S. Fuller, and G.L. Pearson, “A new silicon p-n junction photocell for converting solar radiation into electrical power,” J.Appl. Phys., vol. 25, pp. 676-677, 1954
[3] William Sockley, and Hans J. Queisser, “Detailed balance limit of efficiency of p-n junction solar cells,” J.Appl. Phys., vol. 32, pp. 510-519, 1961.
[4] http://www.nrel.gov/
[5] Bernhard Vogl, Alexander M. Slade, Christiana B. Honsberg, Jeffrey E. Cotter and Stuart R. Wenham, “Inclusion of dielectric films for surface passivation of buried contact solar cells,” Photovoltaic Specialists Conference, pp. 327-330, 2000.
[6] Valentin D. Mihailetchi, Yuji Komatsu, and L. J. Geerligs, “Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells,” Appl. Phys. Lett., vol. 92, 2008.
[7] B. Sopori and Y. Zhang, “H-diffusion mechanism(s) in PECVD nitride passivation of si solar Cells,” NCPV 1st Conf. Program Review Meeting, Lakewood Colorado, 2001.
[8] Y. Inomata, K. Fukui, K. Shirasawa, “Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method,” Solar Energy Materials and Solar Cells, vol. 48, pp. 237-242, 1997.
[9] P. Manshanden, A.R. Burgers, W.A. Nositschka, O. Voige, A.W. Weeber, “Silicon solar cells textured by low damage RIE with natural lithography,” Conference Record of the Twenty-Ninth IEEE, Photovoltaic Specialists Conference, pp. 324-327, 2002.
[10] S. K. Dhungel, J. Yoo, K. Kim, B. Karunagaran, H. Sunwoo, D. Mangalaraj, and
J. Yi, “Effect of pressure on surface passivation of silicon solar cell by forming
gas annealing,” Mater. Sci. Semicond. Process., vol. 7, pp. 427-431, 2004
[11]A. Ebong, M. Hillali, A. Rohatgi, “Rapid photo-assisted forming gas anneal (FGA) for high quality screen-printed contacts for silicon solar cells,” Conference Record of the Twenty-Eighth IEEE , Photovoltaic Specialists Conference, pp. 324-327, 2000.
[12] I. Cesar, E. Granneman, P. Vermont2, E. Tois, P. Manshanden, L.J. Geerligs, E.
E. Bende, A.R.Burgers A.A. Mewe, Y. Komatsu, A.W. Weeber, “Excellent rear
side passivation on multicrystalline silicon solar cell with 20 nm uncapped
Al2O3 layer: Industrialization of ALD for solar cell applications,” Photovoltaic
Specialists Conference (PVSC), 35th IEEE, pp. 44-49, 2010.
[13] Quanyuan Shang, Walter Seaman, Mike Whitney, Mark George, John Madocks, Richard Ahrenkiel, “N-type and P-type C-SI surface passivation by remote PECVD AlOxfor solar cells,” 35th IEEE, Photovoltaic Specialists Conference (PVSC), pp. 001335-001338, 2010.
[14] I. Martin, M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas and R. Alcubilla,
“Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor
deposited amorphous SiC: H films,” Appl. Phys. Lett., vol. 79, pp. 2199-2201, 2001.
[15]Martin Schaper, Tan Schmidt, Heiko Plagwitz , Rolf Bredel, “20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation,” Research and Applications, vol. 13, pp. 381–386, 2005.
[16]Christoph Boehme, Gerald Lucovsky, “Origins of silicon solar cell passivation by
SiNx : H anneal,” Journal of Non-Crystalline Solids, vol. 302, pp. 1157-1161,
2002.
[17] V. D. Mihailetchi, Y. Komatsu, and L. J. Geerligs, “Nitric acid pretreatment for
the passivation of boron emitters for n-type base silicon solar cells,” Appl. Phys.
Lett., vol. 92, pp. 063510, 2008
[18] Kyeong-Yeon Cho, II-Hwan Kim, Dong-Joon Oh, Ji-Myung, Shim,Eun-Joo,
Lee, Hyun-Woo Lee, Jun-Young Choi, Ji-Sun Kim, Jeong-Eun Shin, Soo-Hong
Lee and Hae-Seok Lee, “Improvements of Voc by selective emitter pattern optimization in screen printed crystalline Si solar cells,” 2010 35th IEEE, Photovoltaic Specialists Conference (PVSC), pp. 1335-1338, 2010.
[19] A. Kress, R. Tolle, T. Bruton, P. Fath, E. Bucher, “10 x 10 cm 2 screen printed
back contact cell with a selective emitter,” Conference Record of the Twenty-Eighth IEEE, Photovoltaic Specialists Conference, pp.213-216, 2000.
[20] F. Book, S. Braun, A. Herguth, A. Dastgheib-Shirazi, B. Raabe, G. Hahn, “The Etchback Selective Emitter Technology and It’s Application to Multicrystalline Silicon,” 35th IEEE, Photovoltaic Specialists Conference (PVSC), 2010.
[21] Christiana B. Honsberg, Member, IEEE, Jeffrey E. Cotter, Keith R. McIntosh, Stephen C. Pritchard, Bryce S. Richards, and Stuart R. Wenham, “Design Strategies for Commercial Solar Cells Using the Buried Contact Technology,” IEEE Transactions on Electron Devices, vol. 46, pp.1984-1992, 1999.
[22 ] W. Jooss, M. McCann, P. Fath,S. Roberts, T.M. Bruton, “Buried contact solar
Cells on multicrystalline silicon with optimized bulk and surface passication”, 3rd World Confererence on Photovollaic Energv Conversion, pp. 959-962, 2003.
[23] N. Mason , A. Artigao , P. Banda, R. Bueno, JM. Fernandez, C. Morilla, and R. Russell, “The technology and performance off the latest generation buried contact solar cell manufactured in BP solar’s Tres Cantos Facility,” 19th European PV Solar Energy Conference , 2004.
[24] Axel Metz and Rudolf Hezel, “High-quality passivation rear contact structure for silicon solar cells based on simple mechanical abrasion,” Conference Record of the Twenty-Eighth IEEE , Photovoltaic Specialists Conference, 2000 .
[25] J. Schmidt1*,y, A. Merkle1, R. Brendel1, B. Hoex2, M. C. M. van de Sanden2 , W. M. M. Kessels2, “Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3,” Progress in Photovoltaics: Research and Applications, vol. 16, pp. 461–466, 2008.
[26] M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H.
Hanafusa and Y. Kuwano, “Development of new a-Si/c-Si heterojunction solar
cells: ACJ-HIT (artificially constructed junction-heterojunction with intrinsic thin-layer),” Jpn. J. Appl. Phys., vol. 31, pp. 3518-3522, 1992.
[27] M. Taguchi , K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K.
Uchihashi, N. Nakamura, S. Kiyama and O. Oota, “HITTM cells high-efficiency
crystalline Si cells with novel structure,” Prog. Photovolt: vol. 8, pp. 503-513, 2000.
[28] Chun Gong, Emmanuel Van Kerschaver, Jo Robbelein, Tom Janssens, Niels
Posthuma, Jef Poortmans, and Robert Mertens, Fellow, IEEE, “Screen-printed
aluminum-alloyed P+ emitter on high-efficiency N-type interdigitated back
-contact silicon solar cells,” IEEE Electorn Device Letters, vol. 31
, 2010.
[29]Chun Gong, Emmanuel Van Kerschaver, Jo Robbelein, Niels E. Posthuma,
Sukhvinder Singh, Jef Poortmans, and Robert Mertens, “High efficient N-type
interdigitated back contact silicon solar cells with screen-printed al-alloyed
emitter,” Photovoltaic Specialists Conference (PVSC), 35th IEEE, pp. 3145-3148, 2010.
[30]U. K. Das, M. Z. Burrows, M. Lu, S. Bowden, and R. W. Birkmire, “Surface passivation and heterojunction cells on Si (100) and (111) wafers using DC and RF plasma deposited Si:H thin films,” Appl. Phys. Lett., pp. 063504-3, 2008.
[31] M.A. Green, S.R. Wenham, J. Zhao, S. Bowden, A.M. Milne, M.Taouk, F. Zhang, “Present status of buried contact solar cells,” Conference Record of the Twenty Second IEEE , Photovoltaic Specialists Conference, vol. 1, pp. 46-53, 1991.
[32]Young H. Cho, A.U. Ebong, E. C. Cho, D. S. Kim, S.H. Lee, “Advanced buried contact solar cell structure,” Solar Energy Materials and Solar Cells ,vol. 48, pp. 173-177, 1997.
[33]L. Pirozzi, G. Arabito, F. Artuso, V. Barbarossa, U. Besi-Vetrella, S. Loreti, P. Mangiapane, E. Salza, “Selective emitters in buried contact silicon solar cells: some low-cost solutions,” Solar Energy Materials & Solar Cells ,vol. 65, pp. 287-295, 2001.
[34]Zhao Yuwen, Li Zhongming, Mo Chundong, He Shaoqi, Li Zhiming, Yu Yuan, Chen Zhiyun, “Buried-Contact High Efficiency Silicon Solar Cell with Mechanical Grooving,” Solar Energy Materials and Solar Cells ,vol. 48, pp. 167 -172 , 1997.
[35]J. Zhao, A. Wang, M. A. Green, “High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates,” Solar Energy Materials and Solar Cells, vol. 65, pp.429-435, 2001.
[36]William. Schockely, Hans J. Queisser, “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells,” Journal of Applied Physics, 32(3), pp. 510-519, 1961.
[37]Kenneth E. Bean, “Anisotropic etching of silicin,” IEEE Transactions on Electron Devices , vol. 25, pp.1185-1193, 1978.
[38]M. Elwenspoek, “The form of etch rate minima in wet chemical anisotropic etching of silicon,” Journal of Micromechanical and Microenginnering, vol. 6 pp. 405-409, 1996.
[39]H. Seidel, L. Csepregi, A. Heuberger, H. Baumgartel, “Anisptropic etching of
crystalline silicon in alkaline solution,” J. Electrochem. Soc., vol. 137, 1990.
[40] Young-Woo Ok, Ajeet Rohatgi, Yeon-Ho Kil, Sung-Eun Park, Dong-Hwan Kim, Joon-Sung Lee, and Chel-Jong Choi, “Abnormal dopant distribution in POCL3-diffused N+ emitter of textured silicon solar cells,” IEEE electron device letters, vol. 32, 2011.