研究生: |
黃信元 Huang, Hsin-Yuan |
---|---|
論文名稱: |
具自適應式電容切換技術之低功耗非同步漸近式類比數位轉換器之設計與製作 The Design and Implementation of Power-Efficient Asynchronous SAR ADC with Adaptive Digital-to-Analog Converter Switching Technique |
指導教授: |
謝志成
Hsieh, Chin-Cheng |
口試委員: |
謝志成
Hsieh, Chin-Cheng 盧志文 Lu, Chih-Wen 陳巍仁 Chen, Wei-Zen 洪浩喬 Hong, Hao-Chiao |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 英文 |
論文頁數: | 84 |
中文關鍵詞: | 連續漸進式類比至數位轉換器 Successive |
外文關鍵詞: | Successive Approximation analog-to- |
相關次數: | 點閱:4 下載:0 |
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本論文描述了兩個應用低功耗生醫電路之超低功耗10位元非同步漸近式類比數位轉換器(SAR ADC) 的設計。所提出的兩個類比數位轉換器之供給電源為0.7V至1V, 採樣頻率則為250kS/s至1MS/s。所提出的非同步漸近式類比數位轉換器利用多種技巧來提高ADC功率效率。首先提出一個以分裂式電容切換方式為基礎的自適應式電容切換技術(adaptive digital-to-analog converter switching, ADS),以減少平均切換電容數和來提高電容切換效率。也利用高度匹配的金屬類型單位電容來降低單位電容值進一步減少電容切換功耗。最後,利用動態SAR控制器來減少電晶體數目進一步的優化數位和類比電路之間的功耗權衡。
為驗證本電路,本論文利用0.18微米混合式訊號CMOS製程來實現此二顆實驗晶片。第一個實驗晶片操作在1V供給電源和500kS/ s的採樣率。在接近Nyquist頻率所測得的有效位元數(ENOB),是9.24位元。總功耗為14.2微瓦,等效的figure of merit(FoM)則為47fJ/Conversion-step。
第二個實驗晶片則是第一顆實驗晶片的優化版本。操作電源從0.7V到0.9V。在操作電源和取樣頻率為0.9V和1MS / s時的ENOB和總功耗分別為9.33位元和7.84微瓦。由此產生的FoM則是12.1fJ/conversion-step。當操作電源和取樣頻率為降低至0.7V和250KS/ s時的總功耗只有1.07微瓦。由此產生的ENOB和FOM在接近Nyquist的輸入頻率分別是8.8位元和9.58fJ/conversion-step。
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