Successful synthesis of different types of complex Au-Ga2O3 nanowires, including pure Ga2O3 nanowires, core-shell Au-Ga2O3 nanowires, and post-annealing Au-peapodded Ga2O3 nanowires, various single Au-Ga2O3 complex nanowire nanodevices could be fabricated by different conditions and the assistance of e-beam lithography technique. In the first part, by a simple annealing process at 600 oC with an ammonia gas, a thin GaN heteroepitaxy shell layer was formed surrounded the Ga2O3 nanowire. According to I-V measurements, the surrounded GaN heteroepitaxy shell layer exhibited a semiconductor n-type behavior.
In the second part, the highly photosensitive complex Au-Ga2O3 nanowire nanodevices were further characterized by different laser intensities and wavelengths under room temperature and atmosphere condition. In addition, due to the highly photosensitive behavior of these nanodevices, photoresponse on-off switching measurements were conducted under various laser illuminations of different wavelengths. Owing to different Au nanostructures encapsulated inside Ga2O3 matrixes, the wavelength dependent photoresponse of these nanodevices were carried out according to the localized surface plasmon resonance effects. As a result, the wavelength-tunable photonic switch could be achieved via a suitable post annealing process of the core-shell Au-Ga2O3 nanowire and the integration of e-beam lithography technique.

成功合成各式不同的金-氧化鎵複合奈米線，包含純氧化鎵奈米線、核殼金-氧化鎵奈米線、和退火豆莢金-氧化鎵奈米線後，藉由電子束微影技術的幫助，各式單根金-氧化鎵複合奈米線所構成的奈米元件能夠被製造。第一部份，將氧化鎵奈米線在600度C的氨氣氛下退火，一層很薄的氮化鎵會在氧化鎵的表面形成，其電阻率為5.557×103 Ω-cm，比薄膜氮化鎵的電阻率小四個數量級，推測是由於合成過程中所產生的氮缺陷或/和氧缺陷所致。根據電流電壓量測的結果，發現這層氮化鎵具有N型半導體的性質。第二部分，實驗發現由金-氧化鎵奈米線所構成的奈米元件具有高度的光感特性，因此這些元件被進一步在室溫、一大氣壓的條件下由不同強度和波長的雷射照射下進行量測。此外，由於這些奈米元件的高度光感特性，這些元件可以被拿來在不同的雷射波長下進行光開關的量測實驗。由於不同的金的奈米結構被包覆在氧化鎵中，所造成的區域性表面電漿共振效應，導致這些奈米元件對不同的光的波長有不同的吸收能力。核殼金-氧化鎵奈米線的強吸收波長位於長波長處，在本實驗中是780nm處，而退火豆莢金-氧化鎵奈米線的強吸收波長則是位於532nm附近。因此，藉由適當的退火過程和電子微影技術可以製造出波長可調性的光開關元件。

Chapter 1
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Chapter 2
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Chapter 3
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