二氧化鉿摻雜鋁在金屬-氧化物-半導體結構中之鐵電性探討

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研究生：	朱家立 Chu, Ka-lip
論文名稱：	二氧化鉿摻雜鋁在金屬-氧化物-半導體結構中之鐵電性探討 Aluminum Doped Hafnium Dioxide as Ferroelectric Material in MOS Structure
指導教授：	巫勇賢 Wu, Yung-Hsien
口試委員:	鄭淳護 Cheng, Chun-Hu 高瑄苓 Kao, Hsuan-Ling
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2015
畢業學年度：	103
語文別：	英文
論文頁數：	65
中文關鍵詞：	鐵電性、極化、二氧化鉿、鋁摻雜、記憶體、金屬-氧化物-半導體結構、金屬-鐵電層-半導體結構
外文關鍵詞：	Hafnium dioxide, Aluminum doped, MFS
相關次數：	點閱：1 下載：0
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鐵電材質及相關製程已經被研究數十年，然而因為諸多缺點不易克服而一直不具競爭力，直到近年成功誘發二氧化鉿的鐵電性，使得應用鐵電元件在現代半導體製程露出一絲曙光。另一方面，傳統的場效電晶體面臨到次臨界擺幅（Subthreshold Swing）60mV/dec的物理極限，也可以透過鐵電材質的負電容特性來超越。
本學位論文探討如何在MOS/MFIS結構下成功誘發二氧化鉿摻雜鋁的鐵電性，為進一步的鐵電記憶體及鐵電電晶體提供有用的資訊。相較於MFM的對稱結構，本論文證明在缺少下電極的情況下，適當的退火溫度及應力依舊可以使二氧化鉿摻雜鋁有P-E遲滯窗口，以及在小電壓操作下就有不錯的C-V圖形的順時針窗口。同時，我們觀察到雙向電流穩態存在元件之中，有成為新型記憶體的潛力，在我們初步的研究中可以得知其耐用度及資料保存度都有不錯的表現，而寫入抺除速度也被確認過。

Ferroelectric material and its fabrication have been researched for decades, but it still suffers from many drawbacks which makes it cannot be commercialized. Recently these problems seem to be possible to be solved because ferroelectricity in Hf-based material has been induced successfully. On the other hand, negative capacitance in ferroelectric material which is a plan to overcome limit of 60mV/dec subthreshold swing also attracts many engineers’ interest.
In this thesis, how to induce ferroelectricity of Hf0.95Al0.05OX in MFIS sturcure will be discussed. It will be useful to someone who wants to fabricate FEMFET or FeFET. Comparing with MFM symmetric structure, the authors successfully prove that it is feasible to induce ferroelectricity of Hf0.95Al0.05OX without bottom electrode in appropriate annealing condition. Ferroelectricity is confirmed by P-E curve, clockwise C-V curve. It is suit for low voltage operation for a large C-V hysteresis window. Besides, bi-stable current direction is observed in device, which has potential to develop novel memory device. In our incipient research, it not only demonstrates good endurance and retention but also be verified appropriate P/E pulse time.

Abstract    i
摘要    iii
Acknowledgement    iv
Table of Contents    v
List of Illustration    vii
Chapter 1    Introduction    10
1.1    Motivation to Study Hf-based Ferroelectric Memory    10
1.2    Background of Ferroelectric Material    11
1.3    Application of Ferroelectric Material    13
1.3.1    Memory    14
1.3.2    Transistor    15
1.4    Hafnium Dioxide in Ferroelectric and Its Device    17
1.5    Outlook of Hf-Based Ferroelectric for the Future    19
1.6    Innovation and Contribution    19
Chapter 2    Literature Review    25
2.1    Ferroelectricity in Hafnium Oxide Thin Films    25
2.2    Incipient Ferroelectricity in Al-Doped HfO2 Thin Films    25
2.3    The Effects of Layering in Ferroelectric Si-doped HfO2 Thin Films    26
2.4    HfO2-based Ferroelectric Field-Effect Transistors with 260 nm channel length and long data retention    27
2.5    Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET with a Hf-Based Gate Dielectric    28
2.6    Conclusion    28
Chapter 3    Experiment Process    34
3.1    MOS Device Fabrication    34
3.2    Experiment parameters, recipes and other details    35
3.2.1    Oxidation Details    35
3.2.2    ALD Details    35
3.2.3    PDA Details    35
3.2.4    Capping TiN Details    35
3.2.5    MRTA Details    36
3.2.6    Photolithography Details    36
3.2.7    Dry Etching Details    36
3.2.8    Measurement System    36
Chapter 4    Results & Discussions    39
4.1    P-E & C-V Characteristics Analysis:    39
4.2    Abnormal I-V Characteristic    41
4.3    Current Direction as Data Bit in Memory Device    42
Chapter 5    Conclusions and Future Works    56
References    58
Index    64

                                

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