在現代微縮到深次微米尺寸的積體電路產品中，其電晶體元件對突波和靜電放電變的非常敏感。矽控整流器（SCR）在突波放電的保護元件中，具有很好的突波放電防護能力，其應用在晶片上當突波放電防護元件也有一段很長的時間。
一般高壓元件為了承受高電壓通常必須降低漂移區的摻雜濃度與增加其長度，在傳統的閘流體過壓保護元件（TSPDs, Thyristor Surge Protective Devices）也免不了如此的設計，但相對也增加導通電阻 (Ron)，使得元件額定電流受到限制。近幾年來，CoolMOSFET採用稱為超接面 (Super-junction) 結構，使其在相同耐壓下導通電阻比一般功率元件低很多。
本論文中，我們將依據超接面 (Super-junction) 理論與閘流體元件做結合，但在設計方面並非為傳統垂直式的結合，而是改為橫向式結構的方式。使用的模擬方式採用俯視與側視進行元件的電性分析，研究結果顯示調整場板可有效提升元件的崩潰電壓，且在相同的基底濃度時使用超接面結構，因有RESURF效果使電場分佈較為平坦化，可以得到較低導通電阻與較高的崩潰電壓。本文實際規劃出元件光罩，嘗試設計出一個額定電壓為600V的橫向式超接面閘流體過壓保護元件 (Lateral Super-junction TSPD)。

In the modern deep sub-micron integrated circuit products the transistor is sensitive to surge and electrostatic discharge. Among all the surge protective devices, SCR has a very good protective effect. It also has been applied as one of the surge protective devices for a long time.
General power devices usually either reduce the doping of the drift region or increase its length for high voltage application. This kind of design is also seen among the traditional Thyristor Surge Protective Devices (TSPDs), which have relatively increased on-resistance (Ron) and limits the rated current. In recent years, the CoolMOSFET uses a Super-junction structure which enables a lower on-resistance than other power devices under the same condition.
In the thesis, we are trying to combine the super-junction with the thyristor device in a lateral-structured manner rather than a traditional vertical-structured way. In the simulation, we adopt top-view and side-view structures to analyze the electrical properties of the device. It is shown that there is an effective promotion of breakdown voltage when field plate is adjusted. Moreover, with the same concentration and super-junction, there is a smoother electric field distribution, which results in a lower on-resistance and a higher breakdown voltage. Then, according to the above, we can manage to design the device masks, tape it out, and try to fabricate a 600V lateral super-junction TSPD.

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