本研究以氟化氪準分子脈衝雷射(KrF excimer laser)，對含鎳催化劑於底部之非晶型碳膜(amorphous carbon)照射，使非晶型碳膜經由鎳催化劑產生相變(phase transformation)，進而成長奈米碳管(carbon nanotube)。本研究中，藉由改變雷射能量密度、雷射照射時間、雷射照射頻率、及非晶型碳膜厚度，探討以雷射直寫方式成長奈米碳管材料之可行性。
經由各項分析發現，在適當的合成條件下，能成功地利用此方式成長奈米碳管。此外，由本研究中發現，適當的雷射能量密度與非晶型碳膜厚度之組合為決定奈米碳管成長之主要參數。
本研究進一步利用此雷射直寫技術，將奈米碳管成長於9 □m 之連接窗(via)中，由奈米碳管接窗之電流-電壓(I-V curve)量測，得知此奈米碳管接窗具有Ohmic特性，即金屬導體之性質。

This work presents the formation of carbon nanotubes (CNTs) by direct-writing techniques using KrF excimer pulse laser. The pulse laser energy was applied to irradiate amorphous carbon (a-C) with Ni catalyst underneath for the transformation of carbon species into CNTs.
After various calibrations and analyses, it was found that CNTs could be synthesized successfully by this approach under proper conditions. On the other hand, it was also found an appropriate combination of pulse laser intensity and combined and a-C thickness is the key parameter to determine CNT growth.
In this work, CNTs were further grown in 9 μm via-pad using laser direct writing with I-V curve showing the ohmic behavior and metallic characteristics of CNT via-pad.

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