研究生: |
江致嘉 Chih-Chia Chiang |
---|---|
論文名稱: |
矽摻雜硼之高壓相變研究 Study of Phase Transitions in Si:B under High Pressure |
指導教授: |
林志明
Chih-Ming Lin |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
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論文出版年: | 2007 |
畢業學年度: | 95 |
語文別: | 中文 |
論文頁數: | 100 |
中文關鍵詞: | 矽 、鑽石高壓砧 、X-ray 、Raman |
相關次數: | 點閱:1 下載:0 |
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X-ray粉末繞射及拉曼散射實驗方法,探討高壓下矽摻雜硼相變變化。樣品一:電阻率1~5Ω-cm,濃度2.6×1015~1.3×1016cm-3與樣品二:電阻率1~10Ω-cm,濃度1.3×1015~1.3×1016cm-3。在類靜水壓的環境中對實驗樣品進行加壓實驗,結果顯示X-ray繞射及拉曼散射的結果互相呼應,與本質矽半導體在高壓下的相變類似。由於摻雜硼的矽晶體受硼原子摻雜影響,矽晶體產生不穩定的狀態,致使摻雜硼的矽晶體高壓相變壓力提前。
Phase transitions of boron-doped silicon in a diamond-anvil cell have been studied up to ~ 20 GPa by using Angular-dispersive X-ray diffraction (ADXD) and Raman scattering. Two samples are included: sample 1 with resistivity 1~5 Ω-cm (2.6×1015~1.3×1016cm-3)and sample 2 with resistivity 1~10 Ω-cm (1.3×1015~1.3×1016cm-3). For loading run, the phase transitions have likely as intrinsic silicon semiconductor. Due to the doped boron atom, the unstable condition, the pressure of phase transition ahead of time.
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