根據2002年IEEE 802.3ae 10 Gigabit Ethernet 的規格，利用光纖作為網路傳輸介質已成必要的選擇，為增加光纖網路通道之容量，短距離的光纖到家服務與中、長距離之波長多段分工 (Wavelength Division Multiplexing, WDM )網路技術已廣泛採用，因此免冷卻高效能之費比-白洛(Fabry-Perot)與分佈回授型(DFB)單波長的半導體雷射光源將是目前開發元組件時重要的切入點。
本論文提出以自我對準技術實施開放式再磊晶成長與選擇性有機金屬化學氣相磊晶成長方式分別製作1.55 與1.3 微米掩埋異質結構磷砷化銦鎵應力型多重量子井雷射二極體，以避免傳統脊狀波導 (ridge waveguide)雷射無法抑制主動區橫向漏電流之缺點進而改善元件熱衰退與可靠度等等之問題。 在1.55微米波長方面，本文以未摻雜之磷化銦利用自我對準與單次再磊晶成長技術成功開發出高效率之掩埋異質結構磷砷化銦鎵應力型多重量子井雷射二極體，此法以高阻值之磷化銦掩埋磷砷化銦鎵主動區以達到限制電子與光場雙方面的橫向溢散。經實驗證明此雷射在室溫下連續波(Continuous-Wave)操作下其內部量子效率可高達81%且臨界電流(Ith)為3.4 mA，特徵溫度為72 K且雷射之最高操作溫度為125℃。
另外，以選擇性有機金屬化學氣相磊晶成長方式製作1.3微米之掩埋異質結構雷射二極體方面，為避免磊晶條件之變異，本實驗以二氧化矽當作磊晶成長之遮罩且以96%之開放空間成長主動區寬度為3微米之雷射二極體。經由光激發螢光(PL)系統的驗證下主動區光譜之半高寬僅有47 meV。以此法製作之雷射二極體在300微米之共振腔長度下其臨界電流僅有6.8 mA 且雷射外部之差分量子效率高達 0.45 mW/mA，此雷射在室溫以80 mA電流注入下輸出之光功率高達30 mW，最高之雷射操作溫度為120℃，且經由85℃可靠度測試下此元件之壽命可高達10年。在高頻小信號驗證下此雷射之 3dB頻寬可達11.4 GHz。在位元傳遞速率為10Gb/s的測試下，即使操作溫度高達85℃，接收端所測得的眼圖仍能呈現符合規格之對稱且張開度大的影像。經由以上結果可以確認以選擇性有機金屬化學氣相磊晶成長方式製作之掩埋異質結構雷射二極體完全符合IEEE 802.3ae 10 Gigabit Ethernet 的規格。
最後，在單波長的半導體雷射方面，本論文率先提出以鐵元素摻雜高電阻值之InGaAsP/InP 複合式光柵以製作複式耦合分佈回授型雷射。複式耦合電流阻隔式光柵分佈回授型雷射除了增益調變觀觀念外，還有著傳統之折射率調變觀念，因此可有效的增加旁模抑制比，提升波長選擇的能力。在元件製作方面配合上自我對準開放式再磊晶成長技術的實施，經實驗證明此雷射在室溫下連續波操作下其臨界電流(Ith)為5.3 mA，3dB頻寬可達11.8 GHz (40 mA 值流準位)。室溫下此雷射外部之差分量子效率高達 0.41 mW/mA且20~80℃之效率衰退僅有1dB，元件在室溫以100 mA電流注入下輸出之光功率高達36 mW，最高之雷射操作溫度為125℃。在兩倍臨界電流(10.5 mA)操作下，元件之波長拒斥比(SMSR)高達42dB且環境溫度升高至90℃測量下最高之SMSR也可達48.5dB。經由雷射波長隨環境溫度與變電流操作之紅移速率分析下，以自我對準開放式再磊晶成長技術製作出的掩埋異質結構式雷射二極體，與傳統之脊狀波導雷射相比此元件之自我散熱能力增加了18%且在85℃, 5 mW光功率輸出之老化測試下其壽命高達12.5年。

The advent of high-speed Internet has seen renewed interest in fiber to the home (FTTH) systems due to the potentially greater economic revenues. Nowadays, the deployment of optical networks in long-haul networks has been promoted into SONET OC-192 (10 Gbit/S) standard for enhancing data transmission capacity and the technical development of diode lasers focuses on low cost and compact-size integration technology.
In general, the performance of these conventional InGaAsP/InP 1.3 and 1.55 µm wavelength laser diode is limited by: (1) leakage currents especially at elevated temperatures; (2) thermal saturation; (3) long-term reliability; and (4) the strongly temperature-dependent optical gain and loss in the InGaAsP/InP material.
There are two alternative methods to promote the structure and the performance of narrow-stripe InP-based lasers for wide temperature range application: the buried heterostructures (BH) and selective area metalorganic vapor phase epitaxy technique. In this dissertation we first describe the InGaAsP BH laser diodes fabricated by single-step MOCVD regrowth and self-aligned technique. A simple method to fabricate the high performance 1.55-μm InGaAsP/InP BH LDs with an intrinsic InP current blocking layer by single-step MOCVD regrowth and self-aligned technique. The method provides a high uniformity and high reproducibility of LD fabrication on a large size wafer. The BH LDs were buried by the intrinsic InP layer which used as the current blocking layer as well as a carrier and optical confinement layer and have a calculated internal quantum efficiency of 81%, an internal loss of 21.5 cm-1. With an as-cleaved front facet and a high reflectivity coating (~92%) was applied to the rear facet. The threshold current of BH LDs can be reduced to 3.4 mA at 20℃, 19 mA at 100℃, an increase of maximum operation temperature up to 125℃, and a characteristic temperature of 72 K in 20-60℃. The BH LDs with an as-cleaved front facet and a high reflectivity coating (~92%) applied to the rear facet can increase the maximum operation temperature up to 125℃ and have a light output power exceeded 10 mW at 80 mA and 100℃. These LD characteristics are comparable to those BH LDs with conventionally Fe-doped or p/n/p InP embedding layers as the current-blocking structure.
In chapter 5, we next demonstrate the excellent index-guided 1.3 μm InGaAsP strain-compensated multi-quantum- well BH LDs grown by selective area metalorganic chemical vapor epitaxty (SA-MOCVD) on a patterned InP substrate. The photoluminescence (PL) of SCMQW active region grown on the patterned grooves has a narrow full width at half maximum of ~47 meV. These LDs grown on a patterned InP substrate show a low threshold current of 6.8 mA and a high light output power of 30 mW at 80 mA, a high slope quantum efficiency of 0.45 mW/mA, and a maximum operating temperature is 120℃with a characteristic temperature of 72 K in 20-80℃. The 3-dB modulation bandwidth of these LDs can be extended as far as 11.4 GHz under a bias level of 40 mA, and back-to-back test show a clear and symmetric eye diagram at 10 Gb/s with PRBS of 231-1 word length and a peak-to-peak voltage of 1.08 V at 85℃. From the accelerated aging test, the median lifetime for the LDs operating at 85℃ and 5mW is estimated to be longer than 9 x 104 hrs or 10 years.
Throughout the chapter 6, we highlight performance advantages of 1.3-µm complex-coupled distributed feedback (CC-DFB) buried heterostructure (BH) laser diodes (LDs) with Fe-doped InGaAsP/InP hybrid grating layers. High optical coupling coefficient and eminent current confining ability are accomplished by combining the Fe-doped InGaAsP/InP current-blocking-grating (CBG) layers to provide both the index and gain distributed-feedback coupling coefficients. Besides, the narrow-stripe BH LDs are implemented by burying the active region with a Fe-doped InP current-blocking layer during the epitaxial regrowth. The fabricated CBG CC-DFB BH LDs at 20℃ shows a low threshold current of 5.3 mA, a maximum light output power of 36 mW at 100 mA, a high slope efficiency of 0.41 mW/mA. In addition, these LDs exhibit a maximum operation temperature of 125℃, an extremely low threshold current of 15.8 mA at 90℃, a small variation in slope efficient of only -1 dB at the temperature increased from 20 to 80℃, and a characteristic temperature of 70 and 58 K between 20 and 70℃ and 70 and 120℃, respectively. The LDs measured at a drive current of 2 × Ith exhibits a SMSR of approximately 42 dB at 10.5 mA, and increases to 45 dB above 15 mA, and stay stably in the same DFB mode with a high SMSR even at high temperatures. The analysis of wavelength shift with injected current demonstrates that the thermal dissipation capability of CBG CC-DFB BH LDs increases about 18%, which is attributed to the low thermal impedance of the Fe-doped InP buried layer. Furthermore, these 1.3 μm CBG CC-DFB BH LDs exhibit a high-speed characteristic up to 11.8 GHz at room temperature and an estimated median lifetime of more than 1.1 × 105 hrs or 12.5 years at 5 mW and 85℃. These excellent characteristics at high temperatures are achieved and the laser is expected to be well suited for 10-gigabit Ethernet applications.

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