寬頻與多頻段毫米波前端電路｜國立清華大學博碩士論文庫

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研究生：	簡世杰 Chien, Shih Chieh
論文名稱：	寬頻與多頻段毫米波前端電路 Wideband and Multiband Millime-ter-Wave Front-End Circuits
指導教授：	劉怡君 Liu, Yi Chun
口試委員:	徐碩鴻 Hsu, Shuo- ung 郭建男 Kuo, Chien Nan
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	英文
論文頁數：	115
中文關鍵詞：	寬頻、多頻段、壓控震盪器、低雜訊放大器、功率放大器
外文關鍵詞：	Wideband, Multiband, VCO, LNA, PA
相關次數：	點閱：3 下載：0
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隨著高速的點到點通訊和實時多媒體串流的需求，越來越多的毫米波通訊標準被提出，像是未來5G的通訊協定、802.11ad等。因此完全集成的寬頻和多頻段壓控震盪器、低雜訊放大器和功率放大器在這幾年被廣為研究。然而，寬頻和多頻段的前端電路比起窄頻電路要達到高的表現是更為複雜和有挑戰的，像是低相位雜訊的壓控震盪器、低雜訊因數的低雜訊放大器和高效率的功率放大器。
本論文主要討論被動元件的理論分析和上述三種電路的基本知識和設計方法，並且提出五個電路設計。其中有兩個使用高階的諧振電路以達成多頻段的震盪、開關式諧振電路以達成較寬的調頻範圍和數位控制人工介電質傳輸線來達成中度調頻的毫米波寬頻和多頻段的壓控震盪器；一個在輸入匹配使用四階諧振電路以達成雙頻段的匹配和帶通濾波器與帶阻濾波器所組成的同步雙頻段低雜訊放大器和兩個使用內建帶阻濾波變壓器、混合型層疊、中和電容、並聯串聯式功率結合器的功率放大器。第一個壓控振盪器使用0.7V的電壓，達到-187.8的質量因數，第二個壓控振盪器使用0.9V的電壓，並在三個頻段達到-180, -173.4和-147.5的質量因數。低雜訊放大器在2.7V的電壓下達到兩個頻段0.6dB的增益不匹配，在兩個頻段的雜訊因數分別為5.78和6.03。第一個功率放大器使用3V的電壓在兩個頻段達到14.1%和4.6%的效率，第二個使用1.5V的電壓在兩個頻段達到9.4%和2.9%的效率。

With the high demands of the high-speed point-to-point communications and real time multimedia streaming, increasing communication standards are proposed at the millimeter-wave band. Fully integrated wideband and multi-band voltage-controlled oscillators (VCOs), low-noise amplifiers (LNAs) and power amplifiers (PAs) have gained momentum in the past few years. However, the designs of the wideband and multi-band front-end circuits are complicated and challenging in order to achieve high performance on the specifications such as the phase noise of the VCO, the noise figure of the LNA and the efficiency of the PA. In this thesis, fundamental of these circuits are first revisited followed by the design methodologies and discussion of five novel works. Two millimeter-wave wideband and multi-band VCOs are introduced with a high order tank, a switch resonator, and digital controlled artificial dielectric (DiCAD) transmission line. A unique architecture with a 4th-order tank in a dual-band input matching network and a bandpass filter with a notch is proposed to achieve a concur-rent dual-band LNA. Finally, two PAs are designed to provide the concurrent du-al-band operation by leveraging a built-in notch of a transformer that couples from adjacent stages.

ACKNOWLEDGEMENT    iii
ABSTRACT    iv
摘要    v
CONTENTS    vi
LIST OF FIGURES    x
LIST OF TABLE    xv
CHAPTER 1  Introduction    1
1  Introduction to Millimeter-Wave Systems and Applications    1
2  Introduction to Multi-band Systems    2
3  The Challenges and Pioneering Developments in MM-Wave Multi-Band VCOs    3
4  The Challenges and Pioneering Developments in MM-Wave Concurrent Mul-ti-Band LNA    5
5  The Challenges and Pioneering Developments in MM-wave Concurrent Mul-ti-Band PA    5
CHAPTER 2  Design of Passive Devices in CMOS Process    6
1  Inductors    6
1.1  Basics    6
1.2  On-Chip Inductors    7
1.3  Substrate Loss in Inductors    8
1.4  Equivalent Circuit Models of On-chip Inductor    9
1.5  Single-Ended and Differential Driven On-Chip In-ductors    9
2  Transformers    11
2.1  Ideal Transformers    11
2.2  Coupled Inductors    12
2.3  Equivalent Circuits of Coupled Inductors    14

CHAPTER 3  MM-Wave LC Voltage-Controlled Oscillator    16
1  Introduction to Oscillators    16
2  Design of LC Cross-Coupled Oscillator    16
2.1  Startup Conditions    17
2.2  Oscillation Frequency Tuning    20
2.3  Phase Noise    21
3  Other LC Oscillator Topologies    25
3.1  Class-B Oscillator with Tail Filter    26
3.2  Class-C Oscillator    27
3.3  Class-D Oscillator    28
3.4  Class-F Oscillator    30
4  A 0.7-V Low-Phase-Noise Multi-Mode Coupled Class-B/Class-C Volt-age-Controlled Oscillator for Millimeter-Wave Applications    31
4.1  Overall Structure    31
4.2  Proposed Switched Coupled Inductor Resonator    31
4.3  Class-B/Class-C Coupled Colpitts Oscillator    36
4.4  Body-Biased PMOS Varactors    37
4.5  Push-Push Technique with a Fundamental Notch    38
4.6  Measurement Results    39
5  A Multi-Mode Ka/V/W Tri-band Switched-Transformer Voltage-Controlled Oscillator in 90-nm CMOS    41
5.1  Overall Structure    41
5.2  Tri-Band 6th-Order Resonator    41
5.3  Proposed Switched Transformer    43
5.4  DiCAD Design    44
5.5  Cross-Coupled Pair Layout    45
5.6  Measurement Results    45
CHAPTER 4  MM-Wave Multi-Band Low-Noise Amplifier    48
1  Introduction to Low-Noise Amplifier    48
1.1  Impedance Matching    48
1.2  Noise Figure    50
1.3  Linearity    54
1.4  Stability    56
1.5  LNA Design Procedures    57
2  Concurrent Multi-band LNA Design    59
3  A Dual Band LNA Prototype in 0.18-m BiCMOS    61
3.1  Overall Structure    61
3.2  Design of Cascode Stage    62
3.3  Design of Input Matching Network    64
3.4  Dual Band Load Design    66
3.5  Simulation and Measurement Results    67
CHAPTER 5  MM-Wave Multi-Band Power Amplifier    71
1  Introduction to Power Amplifier    71
1.1  Output Matching Network    71
1.2  Power Efficiency    72
1.3  AM-PM Conversion    73
1.4  Adjacent Channel Power Ratio (ACPR)    74
1.5  Error Vector Magnitude (EVM)    75
2  A Dual Band PA Prototype in 0.18-m BiCMOS    75
2.1  Overall Structure    75
2.2  Active Devices    76
2.3  Transformer with Built-in Notch    78
2.4  Active Notch Filter with Negative Resistance    80
2.5  Oxalis Deppei Closed Ring Resonator (ODCRR)    81
2.6  Adaptive Biasing    83
2.7  Two Mode Operation    84
2.8  Simulation Results    85
3  A Dual Band PA Prototype in 90-nm CMOS    88
3.1  Overall Structure    88
3.2  CS Stage with Neutralization Capacitor    89
3.3  Parallel-Series Power Combiner    91
3.4  Simulation Results    92
CHAPTER 6  Conclusion    95


                                

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