隨著電子產品性能的提升需求不斷增加，三維封裝技術（3D-IC）已成為應對挑戰的關鍵技術。微凸塊作為建立堆疊層間電氣連接的重要技術，通常直徑小於100微米。這些微小的銲點對於晶片間的可靠連接至關重要。然而，隨著焊點尺寸逐漸微縮，金屬間化合物（Intermetallic compounds）所佔比例相對提升，其可靠性更仰賴金屬間化合物的性質，因此，對金屬間化合物的研究成為了當前封裝技術中重要的課題。Ni/Sn 銲點結構是一個典型的材料系統，在微凸點尺度下，此系統出現了若干關鍵問題。在Ni/Sn銲點中，Ni3Sn4金屬間化合物（Intermetallic compounds）的形成會導致顯著的體積收縮，最高可達11.3%。因為無足夠的焊料殘留，導致接點處為全金屬間化合物時，體積收縮效應尤為明顯，進而使接點處出現空洞，裂紋會透過空洞等相對脆弱的區域傳播，從而造成可靠性的隱憂。

為了解決上述問題，研究探討銀添加於銲料的改良作用。添加銀可促進 Ni/Sn 系統中 Ag3Sn 的形成。不同於早期研究都避免在球狀網格陣列（Ball Grid Array）中形成的Ag3Sn，微凸點中塊狀Ag3Sn 的形成有助於改善銲點的機械性能。根據剪切測試的結果，添加銀的微凸點顯示出顯著的剪切強度提升。與未添加銀的 Cu/Ni/Sn/Ni/Cu 銲點相比， Cu/Ni/Sn-3.5Ag/Ni/Cu 銲點的剪切強度提高了約37%。進一步的剪切斷裂路徑分析顯示，塊狀Ag3Sn的存在避免Ni/Sn微焊點中空洞的形成，同時因其具有卓越的韌性，也能夠有效地阻止裂紋的擴展。

通過對 Ni/Sn 系統中的 IMCs 問題的分析，及銀添加對銲料改良的研究，可以明顯看到銀的添加對微凸點的機械性能和可靠性有顯著的提升。剪切測試和斷裂路徑分析證明了Ag3Sn在提高焊點剪切強度的有效性。這些研究成果有助於進一步優化三維封裝技術，提高電子產品的整體性能和可靠性。

As the demand for enhanced electronic product performance continues to grow, three-dimensional integrated circuit (3D-IC) technology has emerged as a key solution to address these challenges. Microbumps, which are crucial for establishing electrical connections between stacked layers, typically measure less than 100 micrometers in diameter. These small-size solder bumps are essential for reliable inter-chip connections. However, as bump sizes decrease, the proportion of intermetallic compounds (IMCs) increases, making the reliability of microbumps increasingly dependent on the properties of IMCs. Thus, investigation for IMCs has become a significant topic in current packaging technology.

The Ni/Sn solder joint is a typical material system. However, Ni/Sn system presents a critical issues at the microbump scale. The formation of Ni3Sn4 IMC in Ni/Sn solder joints leads to significant volume shrinkage, up to 11.3%. Due to no residual solder, when the interface is composed of full IMC, the volume shrinkage effect is particularly pronounced, resulting in the formation of voids at the joint interface, where cracks can propagate through these weak points, raising concerns about joint reliability.

To solve these problems, research has explored the effect of adding Ag to the solder. The addition of Ag promotes the formation of Ag3Sn in the Ni/Sn system. Unlike earlier studies that avoided the formation of Ag3Sn in Ball Grid Arrays (BGA), the bulk-type Ag3Sn formed in microbumps improves the mechanical performance of the solder joints. Shear test results demonstrate that microbumps with Ag addition exhibit a significant increase in shear strength. As compared to Cu/Ni/Sn/Ni/Cu solder joints, the Cu/Ni/Sn-3.5Ag/Ni/Cu solder joints increases approximately 37% in shear strength. Further fracture path analysis shows that the presence of bulk-type Ag3Sn eliminates void formation in Ni/Sn microbumps and effectively inhibits crack propagation due to its superior toughness.

Through this study, it is evident that Ag addition can enhance the mechanical performance and reliability of microbumps. Shear testing and fracture path analysis confirm that the presence of Ag3Sn could improve the reliability of solder joint. These research findings contribute to optimizing 3D packaging technology, thereby enhancing the overall performance and reliability of electronic products.

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