藉由角解析光電子能譜研究ClAlPc分子在金(111)上的沉積速率和照射光強度變化。本篇論文揭示在金(111)上的ClAlPc分子因沉積速率的不同導致不同的吸附結構。在每分鐘0.02 Å的慢速率情況，主要是氯向下結構但在快速率每分鐘0.2 Å的情形下則是氯向上和氯向下共存。我們進一步研究在上述兩種條件下，曝光和退火在樣品上產生的效應。在慢速率沉積情形，主要氯向下結構較脆弱，在弱光(2.1X10^15 photons/sec)照射下氯向下分子傾倒，在強光(6.4X10^15 photons/sec)照射下氯向下分子脫離，根據分子軌域電子態改變，金的表面態，和真空能階得知。而退火後的結果也顯示類似行為。然而在快速率沉積情形下做退火和曝光處理，氯向下和氯向上共存的結構都非常穩定。

The deposition-rate and irradiation-flux dependence of ClAlPc adsorbed on the Au(111) crystal was investigated by the angular-resolved photoelectron spectroscopy (ARPES). This thesis reveals that different depositing rates of ClAlPc on Au(111) crystal surface result in different adsorption configurations of ClAlPc; at the slow rate of 0.02 Å/min, Cl-down configuration dominates but at the fast rate of 0.2 Å/min Cl-down and Cl-up configurations coexist. We further studied irradiation-exposure and post-annealing effects on the samples under these two conditions. For the case of slow deposition, the dominant Cl-down configuration is vulnerable to the irradiation; the Cl-down molecules are inclined by the radiation of low flux, 2.1X10^15 photons/sec, and desorbed by the radiation of high flux, 6.4X10^15 photons/sec, according to the change of molecular orbital states, the Au surface state, and vacuum level. Post-annealing effects also imply similar behaviors. However for the case of fast deposition, the coexistent configurations are very robust to both irradiation-exposure and post-annealing effects.

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