摘要
本實驗結合實驗室兩台濺鍍系統，採用Si(111)的基板，先以Chamber A鍍製900℃TiN磊晶薄膜300Å作為緩衝層之用，再疊上600℃鈦磊晶薄膜，鈦薄膜的厚鍍分為15分鐘500 Å以及45分鐘1500Å兩種。接著將試片移入Chamber B中，鍍製鋁的磊晶膜，鋁的厚度亦分為3分45秒的500 Å以及13分45秒的1500Å，最後形成Al/Ti/TiN/Si(□□□)多層磊晶膜結構，濺鍍工作完成後試片可分類為三種：

1. Al-500Å/ Ti-500 Å/ TiN300 Å/ Si(111)簡稱為TiAl試片

2. Al-500Å/ Ti-1500 Å/ TiN300 Å/ Si(111)簡稱為Ti3Al試片

3. Al-1500Å/ Ti-500 Å/ TiN300 Å/ Si(111)簡稱為TiAl3試片

取三種比例各一片為一組，依退火條件(改變時間及溫度)逐次放入Chamber B中利用真空退火。

以真空直流磁控濺鍍系統來製作多層膜磊晶是可行的，只要相接的兩種材料間的不匹配常數（Lattice Mismatch）足夠小，或者是原本不匹配常數很大的兩種材料，以適當比例的原子數目堆疊，配合適當的基板溫度，提供能量給原子移動至最穩定的位置。以本實驗為例，三層膜與基板間的磊晶空間關係為：

Al（111）【-101】// Ti（0002）【-2110】// TiN（111）【-101】// Si（111）【-101】

三個種類的試片( TiAl、Ti3Al 及TiAl3 )，在經過各種退火條件後可整理出，從退火條件為550℃2小時後600℃持溫2小時開始，即形成TiAl3多晶相，以及殘餘未反應的鈦磊晶薄膜和鋁的單晶薄膜。

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