本研究發展出的一種形成選擇性射極太陽電池的新方式，此方式是先以相容於量產型太陽電池之製程形成超薄阻擋層再進行一次式的POCL3擴散。這層阻擋層可以降低磷在太陽電池射極上的□雜濃度，利用這種製程結合微影技術，將可以在金屬電極下形成n+-type的□雜區域並於在金屬電極間則形成n-type□雜區域，亦即所謂的選擇性射極。選擇性射極的結構在很多高效率矽太陽電池上都已經被廣泛地使用，此選擇性射極的好處是可讓太陽電池有較佳的短波長吸收、較低的漏電流以及相較於傳統式射極更高的光轉換效率。使用此製程形成選擇性射極其優點在於能有效地於一次POCL3擴散即形成選擇性射極；更重要的是，在不久的將來亦可應用此製程於雷射溝槽埋入式電極技術及雙面太陽電池等其他高效率太陽電池之結構，可大幅簡化其的製程流程。

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