利用光激發氧化銦錫和半絕緣砷化鎵界面產生兆赫輻射

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研究生：	康世穎 Kang, Shi-Ying
論文名稱：	利用光激發氧化銦錫和半絕緣砷化鎵界面產生兆赫輻射 Optically-excited THz emission from indium-tin-oxide / semi-insulating gallium arsenide interface
指導教授：	潘犀靈 Pan, Ci-Ling
口試委員:	賀清華 Her, Tsing-Hua 吳小華 Wu, Hsiao-Hua 楊承山 Yang, Chan-Shan
學位類別：	碩士 Master
系所名稱：	理學院 - 物理學系 Department of Physics
論文出版年：	2019
畢業學年度：	107
語文別：	英文
論文頁數：	71
中文關鍵詞：	兆赫波、半絕緣砷化鎵、半導體、薄膜
外文關鍵詞：	TeraHertz, semi-insulating gallium arsenide, Semiconductor, Film
相關次數：	點閱：4 下載：0
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氧化銦錫(ITO)這樣的大能隙（3.5~4.3ev）半導體具有良好的光電子特性，使得它們被廣泛使用，例如作為光電顯示器件中的透明電極。在本論文中，我們研究分析了兆赫輻射頻譜範圍內，不同方式成長的氧化銦錫的複介電常數、複導電率和電子遷移率。其中電子束蒸鍍法製成之氧化銦錫薄膜的直流導電率高達~1937(Ω-1cm-1)，然而以濺鍍法製成之氧化銦錫薄膜的直流導電率卻只有~536(Ω-1cm-1)。
藉由結合菲涅耳方程式、瞬時電流效應(內建電場)和非線性效應(光整流)的貢獻，我們可以試著解釋電子束蒸鍍法製成之氧化銦錫和半絕緣砷化鎵界面之光激發兆赫輻射電場與泵浦光入射角、光極化角和光功率的趨勢關係。在實驗結果中，我們發現通過電子束蒸鍍法製成的氧化銦錫膜塗覆的<100>半絕緣砷化鎵，和僅半絕緣砷化鎵基底之間的差異具有以下現象。第一，來自電子束蒸鍍法製成的氧化銦錫膜塗覆的半絕緣砷化鎵在垂直入射光的情況下，仍可以產生兆赫輻射，此現象在只有<100>半絕緣砷化鎵的基板上並不會出現。第二，在偏振光趨勢分析方面，在相同的偏振角88°處，兩個樣品將具有不同的現象，來自電子束蒸鍍法製成的氧化銦錫膜塗覆的半絕緣砷化鎵的兆赫輻射將出現兩個時域和頻譜上的峰值。第三，在入射光功率趨勢分析方面，在穿透型實驗結果中，兆赫波訊號隨著功率提升而增加，而在高功率時，入射光被樣品吸收造成兆赫波訊號的飽和。另一方面，對於反射型實驗結果，兆赫波訊號隨著功率提升線性而增加，結果中並無出現飽和的現象。

Large bandgap semiconductors, like ITO (3.5~4.3ev), exhibit nice optoelectronics properties that make them widely used, for example as transparent electrodes in optoelectronics display devices. In this thesis, we analyzed the complex dielectric constant, complex conductivity and carrier mobility of different productions ITO films in THz radiation range. The DC conductivities of e-gun evaporation made ITO film (~1937 Ω-1cm-1) is much larger than that sputtering made ITO thin films (~536 Ω-1cm-1).
By combining the Fresnel equation, photocurrent surge effect and nonlinear effect (Optical rectification), we try to explain pump incident angle, pump polarization angle and pump power dependence of THz electric field from SI-GaAs coated with ITO film which is made by e-gun evaporation. In the experimental results, we found the difference between <100>SI-GaAs coated with ITO film which is made by e-gun evaporation, and the other is only the substrate of SI-GaAs has the following phenomena. First, the THz radiation from the sample that SI-GaAs coated with ITO film which is made by e-gun evaporation will still emitted THz radiation at normal incident, but it can not emit from only <100>SI-GaAs substrate. Second, in the pump polarization dependence, at the same polarization angle 88 o, SI-GaAs coated with ITO film which is made by e-gun evaporation will have two peaks in time and frequency domain. Third, we do the pump power dependence of the sample. In the transmission type results, THz signal will increase as pump power increase. In the high pump power, THz will be saturated, because the absorption of the sample. On the other hand, the reflection type results, THz signal will linear increase as pump power increase, and it will not be saturated in our experiment.

摘要    I
Abstract    II
致謝    IV
Table of Contents    V
List of Figure    VII
List of Table    XI
List of Abbreviations    XII
Chapter 1    Introduction    1
1    Terahertz technology    1
1.1    Introduction of terahertz radiation    1
1.2    Terahertz time-domain spectroscopy    4
2    Motivation    6
3    Organization of Thesis    6
Chapter 2    Theoretical background and analytical methods    7
1    Terahertz Generation from Semiconductor    7
1.1    Drift Current    7
1.2    Diffusion Current    9
1.3    Optical Rectification    11
2    Terahertz Generation or enhancement from metal film    18
2.1    Optical rectification at metal surfaces    18
2.2    Plasmonics for enhanced terahertz emission    20
3    Terahertz Detection by Electro-Optic Sampling    24
4    Analysis methods of extraction of optical properties    28
4.1    Extraction of the complex refractive index    28
4.2    Extraction of the complex conductivity    31
Chapter 3    Experimental Methods    33
1    Experimental Setups    33
1.1    Laser System    33
1.2    Reflection type emitter system    35
1.3    Transmission type emitter system    37
2    Sample Characterizations    39
2.1    SEM Images of samples    39
2.2    Optical properties of samples in THz region    40
Chapter 4    THz emission and enhancement    45
1    Previous work    45
2    Experimental results and discussion of Transmission type THz emitter    47
2.1    The dependence of pump incident angle    48
2.2    The dependence of pump polarization angle    56
2.3    The dependence of pump power    60
3    Experimental results and discussion of Reflection type THz emitter    62
3.1    The dependence of pump polarization angle    62
3.2    The dependence of pump power    65
Chapter 5    Conclusions and future works    66
1    Conclusions    66
2    Future works    68
References    69


                                

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