金屬氧化物介電層之介電常數與厚度對其所組成之奈米雷射之表現探討

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研究生：	田維揚 Tien, Wei-Yang
論文名稱：	金屬氧化物介電層之介電常數與厚度對其所組成之奈米雷射之表現探討 Effects of Dielectric Constants and Thickness of Metal Oxide Dielectric Layers on the Performance of Surface Plasmon Polariton Laser
指導教授：	陳力俊 Chen, Lih-Juann
口試委員:	果尚志 Gwo, Shan-Gjr 吳文偉 Wu, Wen-Wei
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2020
畢業學年度：	109
語文別：	英文
論文頁數：	74
中文關鍵詞：	表面電漿、奈米雷射、介電層
外文關鍵詞：	surface plasmon, nanolaser, dielectric layer
相關次數：	點閱：3 下載：0
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雷射，因其高能量集中、近單色光及高度同調的特性，成為用途相當廣泛的應用元件。而將雷射的尺寸微縮至奈米等級，則能更進一步將其與積體電路整合，形成「積體光路」。
本實驗藉由金屬-氧化物-半導體（ＭOS）結構之奈米雷射以表面電漿共振方式突破繞射限制。氧化鋅奈米線作為半導體材料有著寬能隙與極大的激子束縛能，使其成為室溫下優良的增益介質；原子級平坦的鋁基板提供較低的能量損耗；高介電係數之氧化物的引入則可以大幅度降低雷射閥值。
藉由不同種類的氧化物進行結構上的更替可以發現氧化物介電係數越高，伴隨著更高強度的侷限住金屬及氧化物介面所激發的表面電漿，能有效降低雷射閥值。除此之外，因表面電漿在垂直介面上的傳遞機制，使在一定尺寸下，體積越小的共振腔能更有效的將能量傳遞給增益介質，同樣使雷射閥值降低。
綜合上述氧化物種類及厚度的不同所帶來的閥值改變，將提供奈米雷射更好的效率與更多可能。

Lasers in nanoscale have been found to be a useful device in nano-science and nano-technology. Compared with conventional lasers, it transmits signal in a faster and more efficient way. Accompanied by the improvement of nanolasers, it is promising to integrate with IC circuits. Thus, not only the delivering speed but the amount of data for digital age will rise to a higher level.
In the present study, we demonstrate Surface plasmon polariton (SPP) nanolasers consisting of ZnO nanowires coupled with single-crystalline aluminum film and high dielectric constant interlayer. High quality ZnO nanowires synthesized in a three-zone horizontal furnace acted as gain media to operate lasing at room temperature. Single-crystalline aluminum film grown with molecular beam epitaxy is critical to decrease plasmonic losses. Dielectric layers (SiO2, TiO2, Y2O3, HfO2 and ZrO2) deposited by E-beam evaporator were inserted between ZnO nanowires and Al film to lower the lasing threshold.
The thresholds for lasing were measured to be considerably low with the addition of dielectric layer. Such suppression is attributed to dielectric layer mediating strong confinement of optical field in the subwavelength regime. The threshold value for lasing was found to decrease with increasing dielectric constant for different dielectric layers. It is attributed to the reduction in the volume of resonant cavity leading to the increase in the transfer energy for lasing. The results provide crucial information for the development of efficient and practical nanolaser in nanodevices.

目錄
Contents    1
Abstract    4
摘要    5
誌謝    6
   Introduction    7
1.    Motivation    7
2.    Overview of Nanotechnology    8
2.1.    One-Dimensional Nanostructures    9
3.    Theoretical Background of Electromagnetism    11
3.1.    Electromagnetism in Dielectrics    11
3.2.    Electromagnetism in Metals    14
3.3.    Mechanism for Surface Plasmon Polaritons    15
3.4.    Surface Plasmon Polaritons in Nanolasers    18
4.    Metal/ Oxide/ Semiconductor Structure Nanolaser    19
4.1.    Aluminum Substrate for Metal Layer    20
4.2.    Promising application of Aluminum films in quantum computing    21
4.3.    Dielectric materials    21
4.4.    ZnO Nanowires for Semiconductor    25
   Experimental Procedures    26
1.    Synthesis of ZnO nanowires    27
1.1.    Preparation of Substrate    27
1.2.    Growth in a Horizontal Tube Furnace    28
2.    Epitaxial Aluminum Growth by Molecular Beam Epitaxy (MBE)    29
3.    Preparation of Dielectric layers    30
4.    Fabrication of Nanolaser    30
5.    Scanning Electron Microscope (SEM) Observation    30
6.    Transmission Electron Microscope (TEM) Observation    32
7.    Atomic Force Microscope (AFM) Observation    33
8.    X-ray Diffractometer Measurement    34
9.    Electron Probe MicroAnalyzer (EPMA) measurement    35
10.    Spectroscopic Ellipsometer Measurement    36
11.    Micro-Photoluminescence (µ-PL) Measurement    37
   Results and Discussion    38
1.    ZnO Nanowires    38
2.    Epitaxial Aluminum Film    42
3.    Dielectric Layers    43
3.1.    Silicon Dioxide (SiO2)    44
3.2.    Titanium Dioxide (TiO2)    45
3.3.    Yttrium oxide (Y2O3)    46
3.4.    Hafnium Dioxide (HfO2)    47
3.5.    Zirconium Dioxide (ZrO2)    49
4.    Metal/ Oxide/ Semiconductor Structured Nanolaser    50
5.    Effects of Different Dielectric Layers on Lasing Performance    50
5.1.    5 nm SiO2    50
5.2.    5 nm TiO2    52
5.3.    5 nm Y2O3    53
5.4.    5 nm HfO2    55
5.5.    5 nm ZrO2    56
5.6.    Comparison of Different Dielectric Layers on Lasing Performance    57
6.    Effects of Dielectric Layer Thickness on Lasing Performance    59
6.1.    5 nm TiO2    60
6.2.    10 nm TiO2    60
6.3.    15 nm TiO2    62
6.4.    Comparison of Different Thickness on Lasing Performance    63
6.5.    Comparison on Lasing Performance with other Relevant Works    64
   Summary and Conclusions    66
   Future Prospects    67
1.    Quantitative analysis for cavity loss    67
2.    Surface plasmon polariton nanolasers based on graphene    68
   References    70



                                

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