研究生: |
洪崧富 Hong, Song-Fu |
---|---|
論文名稱: |
以化學浴沈積法製備硫化鎘緩衝層並應用在銅銦鎵硒太陽能電池之研究 The Study on Cadmium Sulfide Buffer Layer Prepared by Chemical Bath Deposition on CIGS Solar Cell Application |
指導教授: |
賴志煌
Lai, Chih-Huang |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2010 |
畢業學年度: | 98 |
語文別: | 英文 |
論文頁數: | 122 |
中文關鍵詞: | 硫化鎘 、緩衝層 、銅銦鎵硒 、太陽能電池 |
外文關鍵詞: | cadmium sulfide, buffer layer, CIGS, solar cell |
相關次數: | 點閱:3 下載:0 |
分享至: |
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Copper indium gallium diselenide (CIGS), which is cheap and has high efficiency, is one of the potential solar cells. In addition to CIGS absorber layer, the study on buffer layer and interface is also important for photovoltaic application. It means the fabrication of buffer layer much influences junction properties and cell performance. Recently, CIGS solar cell with cadmium sulfur buffer layer fabricated by chemical bath deposition (CBD) has the highest efficiency. Therefore, not only film properties but also interface quality are improved by CBD process.
In this thesis, effects of CBD process on CIGS solar cell are focused. It is divided into three parts. In the first part, effects of CBD process on CdS film properties are discussed. Optimum quality of CdS film is obtained by controlling precursor concentration. In the second part, effects of CBD process on interface modification (surface etching and cadmium diffusion) are discussed. Interface could be improved by the enhancement of these modifications. In the final part, by taking two different effects above mentioned into consideration, adequate CdS buffer layer for CIGS solar cell application could be prepared by depositing CdS buffer layer on sputtering CIGS film prepared by quaternary compound target. In this circumstance, nearly 7% efficiency is demonstrated.
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