本文研究中藉由臨場化學聚合法的方式，以氯化鐵作為氧化劑，將吡咯(pyrrole)單體氧化聚合成具導電特性的聚吡咯高分子，使用不同的陰離子作為一次摻雜劑以及平衡電荷離子，並加入二次摻雜劑，反應前，將預清洗的玻璃基材浸入反應溶液中，利用物理吸附的方式將聚吡咯吸附於玻璃基材上形成具透明度與導電度的導電玻璃。

二次摻雜劑山梨醇(Sorbitol)的加入主要著重於以對甲苯磺酸鹽(p-toluene sulfonic salt)作為一次摻雜劑的影響，實驗結果發現，隨著二次摻雜劑加入的量增加，沉積形成的聚吡咯高分子薄膜分散性增加，此舉會引起聚吡咯導電特性的改變，並使用四點探針(Four-point probe)、場發射電子顯微鏡(Field Emission Scanning Electron Microscope, FESEM)、拉曼光譜儀(Raman Spectrometer)、紫外光-可見光-近紅外光譜儀(UV-VIS-NIR Spectrometer)、傅立葉轉換紅外光譜儀(Fourier Transform Infrared Spectrometer, FTIR)、熱重分析儀(Thermogravimetric analyzer, TGA)及電子順磁共振光譜儀(Electron Paramagnetic Resonance Spectroscopy, EPR)等儀器量測，研究當改變一次摻雜劑以及加入二次摻雜山梨醇後，對其導電特性、表面形貌、載子種類及聚吡咯構形做一整合性的分析與探討。

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