本論文分別使用Al2O3高介電材料薄膜以及SBT鐵電薄膜作為絕緣層與鐵電層，製作Metal/Ferroelectric/Insulator/Semiconductor (MFIS)結構，並研究不同厚度與製程的Al2O3薄膜對MFIS鐵電薄膜電容的微結構與電性之影響。從實驗結果發現Pt/Al2O3/Si在熱處理後，結構中可能有介面層的生成、Al2O3薄膜緻密化、Al2O3薄膜結晶性增加與Si元素擴散等現象，並使得MIS結構的電容-電壓與電流-電壓曲線有所變化；而隨著Al2O3薄膜厚度以及熱處理時間的不同，電容-電壓曲線與電流-電壓曲線受到不同的現象主導而發生變化。在Pt/SBT/Al2O3/Si (MFIS)結構中，由SIMS分析觀察到Al元素有往兩側擴散至SBT薄膜與矽基材，以及Si元素擴散進SBT薄膜的現象，其中延長Al2O3薄膜的熱處理時間可降低Al元素的擴散，而增加Al2O3薄膜的厚度可抑制Si元素的擴散現象。由實驗結果中得知，記憶視窗值的變化受到Al2O3薄膜的厚度與熱處理時間的影響。使用不同厚度的Al2O3薄膜所導致的電荷陷阱效應也隨之不同，進而使記憶視窗值有所變化；而Al元素的擴散現象將導致MFIS結構的記憶視窗值下降，崩潰電壓降低，並造成漏電流特性劣化。綜合實驗結果，使用適中厚度的Al2O3薄膜，並經900℃熱處理三分鐘，能得到較大的MFIS記憶視窗值。

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