當物體的尺度縮小至微奈米等級的時候，一些物理特性會略有改變，本論文探討的熱傳導係數即是其中一例。首先依照3□方法建立一套完整薄膜熱傳導係數量測的設備，主要搭配鎖相放大器、訊號消去盒、電腦監控程式(LabVIEW)、以及週邊的設備。此量測設備可以快速（大約15分鐘）並精準的將薄膜的熱傳導係數求得。利用建立的量測設備，實際對氧化矽(SiO2)以及氮化矽(Si3N4)薄膜進行量測，藉此驗證量測設備的可行性。實驗得到的熱傳導係數值分別為0.83±0.31％(W/m-K)以及0.78±0.94％(W/m-K)，結果顯示實驗值與文獻值相去不遠，故證明此量測設備之可靠性。另外本論文討論熱傳導係數的溫度效應，我們利用加熱平板對量測樣本加熱，藉由外加的電源供應器來控制平板表面的溫度，在整個量測過程中，加熱平板的溫度差可以控制在小於1℃的範圍內。我們也實際量測氮化矽(Si3N4)與氧化矽(SiO2)薄膜熱傳導係數與溫度的關係。實驗結果顯示，氮化矽(Si3N4)與氧化矽(SiO2)薄膜的熱傳導係數會因為溫度升高而增加，上升的趨勢與文獻相近。因此，利用自行建立的量測系統可以快速地將薄膜的熱傳導係數求得，搭配加熱設備後可以了解溫度對於熱傳導係數的影響。

When the specimen dimension shrunk down to micron or nano scale, some material properties change slightly. Thermal conductivity coefficient studied in this thesis is just one instance. In this thesis, first, we build up a thin-film thermal conductivity measurement system by using 3□ method, including lock- in amplifier, cancellation box, monitoring software (LabVIEW) and other peripheral instruments. In the measurement system, we can obtain the thermal conductivity of thin film quickly (less than 15 minutes) and accurately. Reliability of the system, we measure the thermal conductivity of silicon dioxide(SiO2) and silicon nitride(Si3N4) thin films, results show that the thermal conductivities are 0.83±0.31％(W/m-K) and 0.78±0.94％(W/m-K), respectively. They are very close to the literature values. The temperature-dependent of thin film thermal conductivities are also discussed in this thesis. We control the surface temperature of heating plate and external power supply. In the measurement process, the temperature stability of heating plate can be controlled less than 1℃. We also actually measure the temperature-dependent thermal conductivities of silicon dioxide and silicon nitride. Experimental results show that their thermal conductivities increase gradually with temperature rise. The trend of thermal conductivity is the same with literature proposed. Hence, we can get the thermal conductivity of thin film by 3□ measurement system rapidly, and we can know the temperature-dependent thermal conductivity by the measurement system and external heating stage.

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