研究生: |
廖莉菱 Liao, Li Ling |
---|---|
論文名稱: |
耐溫接點於高功率模組之材料特性研究 Material Characterization of Temperature Resistant Interconnection for High-Power Module |
指導教授: |
江國寧
Chiang, Kuo Ning |
口試委員: |
蔡宏營
劉德騏 鄭仙志 吳美玲 |
學位類別: |
博士 Doctor |
系所名稱: |
工學院 - 動力機械工程學系 Department of Power Mechanical Engineering |
論文出版年: | 2015 |
畢業學年度: | 104 |
語文別: | 英文 |
論文頁數: | 113 |
中文關鍵詞: | 高功率模組 、電熱耦合效應 、金錫共金銲料 、介金屬化合物 、機械強度 、應力應變曲線 |
外文關鍵詞: | High power module, electro-thermal coupling effect, Au-20Sn eutectic solder, intermetallic compound, mechanical strength, stress-strain curve |
相關次數: | 點閱:2 下載:0 |
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由於高功率電子產品持續增加的需求,功率模組具有高功率密度與高散熱結構已成為開發主流。現今,多數功率模組使用接合導線作為電性傳遞,這將導致其散熱能力有限。功率晶片產生的熱會直接影響導線之可靠度,故接合導線的失效模式必須被探討。隨著功率負載持續地增加,晶片溫度也逐漸升高。因此,雙面功率模組進一步提出來解決散熱問題。然而,過高的晶片溫度導致常見的銲錫無法維持其功能。因此,當晶片溫度持續地上升,功率模組接合材料之耐高溫特性被高度地要求。本研究目的是預測高功率模組之電、熱與力的耦合行為,並判斷接合導線之破壞行為。且提出具有耐高溫能力之接合材料作為高功率模組之接點,其機械特性透過剪力與張力測試在預定的應用溫度下進行檢驗。
根據實際功率模組建構三維有限元素模型,且透過數值分析預測其電熱偶合效應與熱應力行為。最大電流密度和對應的電流聚集效應產生在IGBT晶片與接合導線之界面;同時,電流負載在功率晶片引起最大的溫度梯度,進一步影響結構的熱應力。分析結果與IGBT晶片的量測溫度進行驗證,以確認本研究所用的數值方法是可信的。探討接合導線之熱應力行為與失效模式,且進行接合導線的參數化設計分析,預測其耦合行為和評估其散熱能力。
本研究選擇具有高熔點的Au-20Sn共晶銲料作為接合材料,並檢驗其機械特性。實驗說明Au-20Sn銲料轉變形成具更高熔點的介金屬化合物 (AuSn與Au5Sn),其材料特性符合功率模組之高溫應用需求。利用剪力測試分析在各種熱處理條件下,銲點微結構改變對於其材料強度的影響,亦檢驗在不同應用溫度下銲點材料之機械強度且評估其耐溫能力。解析銲點破壞模式並觀察其初始破壞界面與破壞路徑,這意味著在先進封裝結構可能造成銲點毀損的位置。透過張力測試在各種應變率與溫度負載下量測Au-20Sn銲料的非線性材料參數,檢驗應變率與溫度效應對於材料機械強度的影響,並完成Au-20Sn銲料之應力應變曲線。實驗結果說明當熱處理周期增加、溫度上升或應變率下降,會導致材料強度衰退。最後,建立Au-20Sn銲料溫度相依的材料參數,可以應用在有限元素模型作為非線性材料參數,並可以準確地評估高功率模組的可靠度。
Power module with high power density and high heat dissipation structure has been developed because of increasing requirement for high-power electric products. Nowadays, most power modules use metal wire as interconnection, which results in the limited heat dissipation capability. The heat generated by the power chip directly affects the reliability of the wire; thus, the failure mode of bonding wire is essential investigated. Along with continuously increasing power load, chip temperatures have gradually increased. Therefore, the double-sided power module was further proposed to solve the thermal issue. However, the exceeding high chip temperature bring about that the common solder unable sustain its function. Thus, the bonding materials with high-temperature resistant characteristics are highly demanded when chip temperatures are continuously increasing. The study aims to predict the electro-thermo-mechanical coupling behavior of high-power module and determine the failure behavior of bonding wire. A joint material with high-temperature resistance capability is also proposed. Its mechanical characteristics at the intended application temperatures were examined by shear test and tensile test.
A three-dimensional (3D) finite element (FE) model based on an actual power module was established to predict the electro-thermal coupling effect and thermal mechanical behavior by numerical analysis. The maximum current density and the corresponding current crowding effect were generated at the interface between the insulated gate bipolar transistor (IGBT) chip and bonding wire. Meanwhile, the current load induces the maximum temperature gradient at the power chip and affects the structure thermal stress. The analysis result was validated with the measurement temperatures of IGBT chip to confirm that the numerical methodology is reliable. The thermal-mechanical behavior and failure mode of the bonding wire were also investigated. The parametric design of bonding wire was analyzed to predict the coupling behavior as well as further estimate their heat dissipation capabilities.
An Au-20Sn eutectic solder with a high melting point was used as the bonding material, which further determines its mechanical characteristics. Experiments showed that the Au-20Sn solder transforms into intermetallic compound (IMC) materials with higher melting points (AuSn and Au5Sn), which meet the high temperature requirements. A shear test was used to analyze joint microstructure variations with regard to the influence of corresponding material strength at various thermal treatment conditions. Mechanical strength of joint at different application temperatures was also examined to assess the temperature resistant capabilities. The joint failure mode was analyzed to observe the initial break location and failure path, which means likely to cause the joint damage in advanced package structure. Nonlinear material properties of Au-20Sn solder were measured at various strain rates and temperature loads by tensile test. The strain rate and temperature effects on the influence of material strength were examined to accomplish the stress-strain curve for the Au-20Sn solder. The experimental results showed that the material strength declined when the treatment duration increased, when the temperature increased, and when the strain rate decreased. Finally, the temperature dependent material properties for Au-20Sn was established, which can be applied in FE model as nonlinear parameters and can accurately assess the reliability of high-power module.
T. Y. Hung, S. Y. Chiang, C. J. Huang, C. C. Lee, and K. N. Chiang, "Thermal-mechanical behavior of the bonding wire for a power module subjected to the power cycling test," Microelectronics Reliability, vol. 51, pp. 1819-1823, 2011.
[2] S. W. Yoon, M. D. Glover, H. A. Mantooth, and K. Shiozaki, "Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles," Journal of Micromechanics and Microengineering, vol. 23, p. 015017, 2013.
[3] M. Ciappa, "Selected failure mechanisms of modern power modules," Microelectronics Reliability, vol. 42, pp. 653-667, 2002.
[4] H. Ye, M. Lin, and C. Basaran, "Failure modes and FEM analysis of power electronic packaging," Finite Elements in Analysis and Design, vol. 38, pp. 601-612, 2002.
[5] H. Lu, C. Bailey, and C. Yin, "Design for reliability of power electronics modules," Microelectronics Reliability, vol. 49, pp. 1250-1255, 2009.
[6] T. Kanata, K. Nishiwaki, and K. Hamada, "Development trends of power semiconductors for hybrid vehicles," Proc. International Power Electronics Conference, Sapporo, Japan, June 21-24, 2010
[7] B. C. Charboneau, F. Wang, J. D. Van Wyk, D. Boroyevich, Z. Liang, E. P. Scott, and C. W. Tipton, "Double-sided liquid cooling for power semiconductor devices using embedded power packaging," IEEE Transactions on Industry Applications, vol. 44, pp. 1645-1655, 2005.
[8] C. M. Johnson, C. Buttay, S. J. Rashid, F. Udrea, G. A. J. Amaratunga, P. Ireland, and R. K. Malhan, "Compact Double-Side Liquid-Impingement-Cooled Integrated Power Electronic Module," Proc. 19th International Symposium on Power Semiconductor Devices and IC's, Jeju Island, Korea, May 27-31, 2007
[9] P. Ning, T. G. Lei, F. Wang, G. Q. Lu, K. D. T. Ngo, and K. Rajashekara, "A Novel High-Temperature Planar Package for SiC Multichip Phase-Leg Power Module," IEEE Transactions on Power Electronics, vol. 25, pp. 2059-2067, 2010.
[10] B. H. Kwak, J. M. Kim, M. H. Jeong, K. Lee, J. Kim, and Y. B. Park, "Interfacial microstructure and mechanical reliability of Cu pillar/Sn-3.5Ag bump for 3D packages," Proc. 13th Electronics Packaging Technology Conference, Singapore, Dec. 7-9, 2011
[11] H. Zhang, S. S. Ang, A. Mantooth, and J. C. Balda, "A 6.5kV wire-bondless, double-sided cooling power electronic module," Proc. 4th Energy Conversion Congress and Exposition, Raleigh, NC, USA, Sep. 15-20, 2012
[12] F. Lang, H. Nakagawa, M. Aoyagi, H. Ohashi, and H. Yamaguchi, "A novel chip joint method for high temperature operated SiC power modules," Proc. 8th Electronics Packaging Technology Conference, Singapore, Dec. 6-8, 2006
[13] F. Lang, Y. Hayashi, H. Nakagawa, M. Aoyagi, and H. Ohashi, "A Novel Three-Dimensional Packaging Method for Al-Metalized SiC Power Devices," IEEE Transactions on Advanced Packagin, vol. 32, pp. 773-779, 2009.
[14] T. Kimura, R. Saitou, K. Kubo, K. Nakatsu, H. Ishikawa, and K. Sasaki, "High-power-density inverter technology for hybrid and electric vehicle applications," Hitachi Review, vol. 63, pp. 41-45, 2014.
[15] T. Tokuyama, K. Nakatsu, A. Nishihara, K. Sasaki, and R. Saito, "A novel direct water and double-sided cooled power module for HEV/EV inverter," Proc. International Conference on Electronics Packaging, Toyama, Japan, Apr. 23-25, 2014
[16] N. C. Lee, "Lead-free soldering and low alpha solders for wafer level interconnects," Proc. International Conference Surface Mount Technology Association (SMTA), Chicago, IL, USA, Oct. 25, 2000
[17] K. Suganuma, S. J. Kim, and K. S. Kim, "High-temperature lead-free solders: Properties and possibilities," Journal of Management, vol. 61, pp. 64-71, 2009.
[18] W. Liu, N. C. Lee, and P. Bachorik, "A Composite Solder Alloy Preform for High Temperature Pb-Free Soldering Applications," Proc. 5th International Brazing and Soldering Conference, Las Vegas, NV, USA, Apr. 22-25, 2012
[19] H. W. Zhang and N. C. Lee, "Reliability of BiAgX Solder as a drop-in solution for high temperature lead-free die-attach applications," Proc. International Conference Surface Mount Technology Association, Orlando, FL, USA, Oct. 14, 2012
[20] B. Ozmat, C. S. Korman, P. McConnelee, M. Kheraluwala, E. Delgado, and R. Fillion, "A new power module packaging technology for enhanced thermal performance," Proc. 7th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, Las Vegas, NV, USA, May 23-26, 2000
[21] C. C. Lee, C. Y. Wang, and G. Matijasevic, "Advances in Bonding Technology for Electronic Packaging," Journal of Electronic Packaging vol. 115, pp. 201-207, 1993.
[22] D. M. Jacobson and G. Humpston, "Diffusion Soldering," Soldering & Surface Mount Technology, vol. 4, pp. 27-32, 1992.
[23] L. Bernstein, "Semiconductor Joining by the Solid‐Liquid‐Interdiffusion (SLID) Process: I . The Systems Ag‐In, Au‐In, and Cu‐In," Journal of The Electrochemical Society, vol. 113, pp. 1282-1288, 1966.
[24] N. Heuck, A. Langer, A. Stranz, G. Palm, R. Sittig, A. Bakin, and A. Waag, "Analysis and Modeling of Thermomechanically Improved Silver-Sintered Die-Attach Layers Modified by Additives," IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 1, pp. 1846-1855, 2011.
[25] C. Buttay, A. Masson, J. Li, M. C. Johnson, M. Lazar, C. Raynaud, and H. Morel, "Die attach of power devices using silver sintering-bonding process optimization and characterization," Proc. High Temperature Electronics Network, Oxford, United Kingdom, July 18-20, 2011
[26] P. Peng, A. Hu, H. Huang, A. P. Gerlich, B. Zhao, and Y. N. Zhou, "Room-temperature pressureless bonding with silver nanowire paste: towards organic electronic and heat-sensitive functional devices packaging," Journal of Materials Chemistry, vol. 22, pp. 12997-13001, 2012.
[27] Y. Iino, "Partial transient liquid-phase metals layer technique of ceramic-metal bonding," Journal of Materials Science Letters, vol. 10, pp. 104-106, 1991.
[28] D. S. Duvall, "TLP bonding: a new method for joining heat resisting alloys," Welding Journal vol. 53 pp. 203-214, 1974.
[29] W. D. MacDonald and T. W. Eagar, "Transient liquid phase bonding," Annual Review of Materials Science, vol. 22, pp. 23-46, 1992.
[30] S. W. Yoon, K. Shiozaki, S. Yasuda, and M. D. Glover, "Highly reliable nickel-tin transient liquid phase bonding technology for high temperature operational power electronics in electrified vehicles," Proc. 27th Applied Power Electronics Conference and Exposition, Orlando, FL, USA, Feb. 5-9, 2012
[31] T. Ueda, N. Yoshimatsu, N. Kimoto, D. Nakajima, M. Kikuchi, and T. Shinohara, "Simple, compact, robust and high-performance power module T-PM (transfer-molded power module)," Proc. 22nd International Symposium on Power Semiconductor Devices & IC's, Hiroshima, Japan, June 6-10, 2010
[32] K. Guth, F. Hille, F. Umbach, D. Siepe, and J. Görlich, "New assembly and interconnects beyond sintering methods," Proc. Power Conversion Intelligent Motion, Nuremberg, Germany, May 4-6, 2010
[33] J. F. Li, P. A. Agyakwa, and C. M. Johnson, "Kinetics of Ag3Sn growth in Ag–Sn–Ag system during transient liquid phase soldering process," Acta Materialia, vol. 58, pp. 3429-3443, 2010.
[34] P. Quintero and F. P. McCluskey, "Silver-Indium Transient Liquid Phase Sintering for High Temperature Die Attachment," Journal of microelectronics and electronic packaging, vol. 6, pp. 66-74, 2009.
[35] H. A. Mustain, W. D. Brown, and S. S. Ang, "Transient Liquid Phase Die Attach for High-Temperature Silicon Carbide Power Devices," IEEE Transactions on Components and Packaging Technologies, vol. 33, pp. 563-570, 2010.
[36] T. Tollefsen, A. Larsson, O. Løvvik, and K. Aasmundtveit, "Au-Sn SLID Bonding-Properties and Possibilities," Metallurgical & Materials Transactions, vol. 43, pp. 397-405, 2012.
[37] T. Tollefsen, A. Larsson, M. Taklo, A. Neels, X. Maeder, K. Høydalsvik, D. Breiby, and K. Aasmundtveit, "Au-Sn SLID Bonding: A Reliable HT Interconnect and Die Attach Technology," Metallurgical and Materials Transactions B, vol. 44, pp. 406-413, 2013.
[38] G. S. Matijasevic, C. C. Lee, and C. Y. Wang, "Au-Sn alloy phase diagram and properties related to its use as a bonding medium," Thin Solid Films, vol. 223, pp. 276-287, 1993.
[39] R. W. Johnson, C. Wang, Y. Liu, and J. D. Scofield, "Power Device Packaging Technologies for Extreme Environments," IEEE Transactions on Electronics Packaging Manufacturing, vol. 30, pp. 182-193, 2007.
[40] K. Wang, K. Aasmundtveit, and H. Jakobsen, "Surface evolution and bonding properties of electroplated Au/Sn/Au," Proc. 2nd Electronics System-Integration Technology Conference, Greenwich, London, UK, Sep. 1-4, 2008
[41] K. E. Aasmundtveit, W. Kaiying, N. Hoivik, J. M. Graff, and A. Elfving, "SLID bonding: Fluxless bonding with high temperature stability to above 350 degC," Proc. 2nd European Microelectronics and Packaging Conference, Rimini, Italy, June 15-18, 2009
[42] K. E. Aasmundtveit, T. T. Luu, H. V. Nguyen, R. Johannessen, N. Hoivik, and K. Wang, "Au-Sn fluxless SLID bonding: Effect of bonding temperature for stability at high temperature, above 400 degC," Proc. 3rd Electronic System-Integration Technology Conference, Berlin, Germany, Sep. 13-16, 2010
[43] H. Oppermann, The Role of Au/Sn Solder in Packaging, Springer London, 2005.
[44] S. Anhock, H. Oppermann, C. Kallmayer, R. Aschenbrenner, L. Thomas, and H. Reichl, "Investigations of Au-Sn alloys on different end-metallizations for high temperature applications [solders]," Proc. 22th International Electronics Manufacturing Technology Symposium, Berlin, Germany, Apr. 27-29, 1998
[45] H. Okamoto, "Au-Sn (Gold-Tin)," Journal of Phase Equilibria and Diffusion, vol. 28, pp. 490-490, 2007.
[46] F. Lang, H. Nakagawa, M. Aoyagi, H. Ohashi, and H. Yamaguchi, "Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging," Journal of Materials Science: Materials in Electronics, vol. 21, pp. 917-925, 2010.
[47] F. Lang, Y. Hayashi, H. Nakagawa, M. Aoyagi, and H. Ohashi, "Joint reliability of double-side packaged SiC power devices to a DBC substrate with high temperature solders," Proc. 10th Electronics Packaging Technology Conference, Singapore, Dec. 9-12, 2008
[48] P. Hagler, R. W. Johnson, and L. Y. Chen, "SiC Die Attach Metallurgy and Processes for Applications up to 500 degC," IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 1, pp. 630-639, 2011.
[49] T. Tollefsen, O. Løvvik, K. Aasmundtveit, and A. Larsson, "Effect of Temperature on the Die Shear Strength of a Au-Sn SLID Bond," Metallurgical and Materials Transactions A, vol. 44, pp. 2914-2916, 2013.
[50] Y. D. Wang, I. M. D. Rosa, and K. N. Tu, "Size effect on ductile-to-brittle transition in Cu-solder-Cu micro-joints," Proc. 65th Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, May 26-29, 2015
[51] M. Ishiko, M. Usui, T. Ohuchi, and M. Shirai, "Design concept for wire-bonding reliability improvement by optimizing position in power devices," Microelectronics Journal, vol. 37, pp. 262-268, 2006.
[52] H. Medjahed, P. E. Vidal, and B. Nogarede, "Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes," Microelectronics Reliability, vol. 52, pp. 1099-1104, 2012.
[53] S. Y. Chiang, T. Y. Hung, H. C. Ou, and K. N. Chiang, "Electro-thermal analysis of the Insulated Gate Bipolar Transistor module subjected to power cycling test using specified boundary condition technology," Proc. 12th Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Apr. 18-20, 2011
[54] T. Y. Hung, S. Y. Chiang, C. Y. Chou, C. C. Chiu, and K. N. Chiang, "Thermal design and transient analysis of insulated gate bipolar transistors of power module," Proc. 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, Las Vegas, NV, USA, June 2-5, 2010
[55] J. M. Thebaud, E. Woirgard, C. Zardini, S. Azzopardi, O. Briat, and J. M. Vinassa, "Strategy for designing accelerated aging tests to evaluate IGBT power modules lifetime in real operation mode," IEEE Transactions on Components and Packaging Technologies, vol. 26, pp. 429-438, 2003.
[56] C. Y. Yin, H. Lu, M. Musallam, C. Bailey, and C. M. Johnson, "A Physics-of-failure based Prognostic Method for Power Modules," Proc. 10th Electronics Packaging Technology Conference, Singapore, Dec. 9-12, 2008
[57] K. Shinohara and Y. Qiang, "Fatigue evaluation of power devices," Proc. International Conference on Electronic Packaging Technology and High Density Packaging, Beijing, China, Aug. 10-13, 2009
[58] Q. Yu, T. Shibutani, A. Tanaka, T. Koyama, and M. Shiratori, "Low-cycle fatigue reliability evaluation for lead-free solders in vehicle electronics devices," Proc. Proceedings of the ASME InterPACK Conference, Vancouver, Canada, July 8-12, 2007
[59] Y. G. Lee and J. G. Duh, "Interfacial morphology and concentration profile in the unleaded solder/Cu joint assembly," Journal of Materials Science: Materials in Electronics, vol. 10, pp. 33-43, 1999.
[60] P. T. Vianco, A. C. Kilgo, and R. Grant, "Intermetallic compound layer growth by solid state reactions between 58Bi-42Sn solder and copper," Journal of Electronic Materials, vol. 24, pp. 1493-1505, 1995.
[61] J. M. Gere, Mechanics of materials, London, 5th SI Edition, Nelson Thornes Ltd, 2002.
[62] J. A. Collins, Failure of Materials in Mechanical Design: Analysis, Prediction, Prevention, 2nd Edition, John Wiley & Sons, New York, 1993.
[63] S. S. Manson and M. H. Hirschberg, in Fatigue: an interdisciplinary approach, Syracuse University Press, Syracuse, NY, USA, 1964.
[64] M. A. Meyers and K. K. Chawla, Mechanical metallurgy: principles and applications, Prentice-Hall, Inc., Englewood Cliffs, New Jersey, 1984.
[65] J. D. Morrow, in Internal friction, damping and cyclic plasticity, ASTM STP No. 378, ASTM Philadelphia, 1965.
[66] L. F. Coffin, "A study of the effects of cyclic thermal stress on a ductile metal," Transactions of ASME, vol. 76, pp. 930-950, 1954.
[67] S. S. Manson, Thermal stress and low cycle fatigue, New York, McGraw-Hill, 1966.
[68] M. C. Yew, C. Y. Chou, C. S. Huang, W. K. Yang, and K. N. Chiang, "The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis," Microelectronics Reliability, vol. 46, pp. 1874-1879, 2006.
[69] C. T. Peng, C. M. Liu, J. C. Lin, H. C. Cheng, and K. N. Chiang, "Reliability analysis and design for the fine-pitch flip chip BGA packaging," IEEE Transactions on Components and Packaging Technologies, vol. 27, pp. 684-693, 2004.
[70] K. N. Chiang, Z. N. Liu, and C. T. Peng, "Parametric reliability analysis of no-underfill flip chip package," IEEE Transactions on Components and Packaging Technologies, vol. 24, pp. 635-640, 2001.
[71] V. Gektin, B. C. Avram, and J. Ames, "Coffin-Manson fatigue model of underfilled flip-chips," IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part A, vol. 20, pp. 317-326, 1997.
[72] H. D. Solomon, "Fatigue of 60/40 solder," IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. CHMT-9, pp. 91-104, 1986.
[73] A. Palmgren, "Durability of ball bearings," Zeitschrift des Vereins Deutscher Ingenieure, vol. 68, pp. 339-341, 1924.
[74] M. A. Miner, "Cumulative damage in fatigue," Transactions on American Society of Mechanical Engineers vol. 67, pp. 159-164, 1945.
[75] R. D. Cook, D. S. Malkus, and M. E. Plesha, Concepts and applications of finite element analysis, Wiley, New York, 1989.
[76] ABB, "5SMY 12M1280," ed, 2010.
[77] G. N. Ellison, Thermal Computations for Electronic Equipment, Van Nostrand Reinhole Company, New York, 1989.
[78] I. A. Blech and J. Sello, "Critical length in electromigration-experiments and theory," presented at the 4th international workshop on stress induced phenomena in metallization, Tokyo, Japan, June 4-6, 1997.
[79] P. K. Tse and T. M. Lach, "Aluminum electromigration of 1-mil bond wire in octal inverter integrated circuits," Proc. 45th Electronic Components and Technology Conference, Las Vegas, NV, USA, May 21-24, 1995
[80] L. L. Liao, T. Y. Hung, C. K. Liu, W. Li, M. J. Dai, and K. N. Chiang, "Electro-thermal finite element analysis and verification of power module with aluminum wire," Microelectronic Engineering, vol. 120, pp. 114-120, 2014.
[81] M. Ishiko, M. Usui, T. Ohuchi, and M. Shirai, "Design concept for wire-bonding reliability improvement by optimizing position in power devices," Microelectron. J., vol. 37, pp. 262-268, 2006.
[82] X. F. Wei, R. C. Wang, C. Q. Peng, Y. Feng, and X. W. Zhu, "Microstructural evolutions of Cu(Ni)/AuSn/Ni joints during reflow," Progress in Natural Science: Materials International, vol. 21, pp. 347-354, 2011.
[83] X. F. Wei, Y. K. Zhang, R. C. Wang, and Y. Feng, "Microstructural evolution and shear strength of AuSn20/Ni single lap solder joints," Microelectronics Reliability, vol. 53, pp. 748-754, 2013.
[84] J. W. Yoon, H. S. Chun, and S. B. Jung, "Reliability evaluation of Au–20Sn flip chip solder bump fabricated by sequential electroplating method with Sn and Au," Materials Science and Engineering: A, vol. 473, pp. 119-125, 2008.
[85] S. S. Kim, J. H. Kim, S. W. Booh, T. G. Kim, and H. M. Lee, "Microstructural evolution of joint interface between eutectic 80Au-20Sn solder and UBM," Materials Transactions, vol. 46, pp. 2400-2405, 2005.
[86] H. G. Song, J. P. Ahn, and J. W. Morris, "The microstructure of eutectic Au-Sn solder bumps on Cu/electroless Ni/Au," Journal of Electronic Materials, vol. 30, pp. 1083-1087, 2001.
[87] S. Y. Jang, J. Wolf, O. Ehrmann, H. Gloor, H. Reichl, and K. W. Paik, "Pb-free Sn/3.5Ag electroplating bumping process and under bump metallization (UBM)," IEEE Transactions on Electronics Packaging Manufacturing, vol. 25, pp. 193-202, 2002.
[88] F. X. Che, W. H. Zhu, E. S. W. Poh, X. W. Zhang, and X. R. Zhang, "The study of mechanical properties of Sn-Ag-Cu lead-free solders with different Ag contents and Ni doping under different strain rates and temperatures," Journal of Alloys and Compounds, vol. 507, pp. 215-224, 2010.
[89] D. S. Liu and Y. C. Chao, "Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire," Journal of Electronic Materials, vol. 32, pp. 159-165, 2003.