三族氮化物奈米柱之成長、物性分析及元件應用

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研究生：	林弘偉 Lin, Hon-Way
論文名稱：	三族氮化物奈米柱之成長、物性分析及元件應用 Epitaxial Growth, Fundamental Properties, and Device Applications of III-Nitride Semiconductor Nanorods
指導教授：	果尚志 Gwo, Shangjr
口試委員:
學位類別：	博士 Doctor
系所名稱：	理學院 - 物理學系 Department of Physics
論文出版年：	2010
畢業學年度：	99
語文別：	英文
論文頁數：	105
中文關鍵詞：	氮化鎵、氮化銦鎵、奈米柱、白光發光二極體、分子束磊晶、三族氮化物
外文關鍵詞：	GaN, InGaN, Nanorods, Withe LEDs, PAMBE, III-Nitrides
相關次數：	點閱：2 下載：0
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Plasma-assisted molecular beam epitaxy (PAMBE) is applied in this dissertation for self-assembled III-nitride (GaN, InGaN, and InN) nanorod arrays growth. Both structural and optical properties were discussed in detail, and the devices were fabricated to demonstrate their potential to application.
PAMBE grown GaN nanorod arrays were completely relaxed, strain-free single crystals. The high emission efficiency and excitonic properties of GaN nanorod arrays have been demonstrated.
By using self-assembled GaN nanorod arrays as strain-free growth templates, we introduce the concept of thick InGaN nanodisks to demonstrate full-color applications to overcome the low efficient emission in long wavelength regions. Otherwise, we could not get efficient long-wavelength emissions beyond the blue region due to a strong quantum confined Stark effect (QCSE) in lattice-mismatched polar InGaN quantum wells. In combination with enhanced carrier localization and high crystalline quality, this approach allows us to realize full-color InGaN nanodisk emitters. By tailoring the numbers, positions, and thicknesses of polychromatic nanodisk ensembles embedded vertically in the GaN nanorod p-n junction, we are able to demonstrate natural white (color temperature ~6,000 K) electroluminescence from InGaN/GaN nanorod arrays.

本論文討論以在矽基板上利用分子束磊晶成長法應用於三族氮化物(氮化鎵、氮化銦鎵)奈米柱材料之成長。並對其結構以及光學性質做詳細的分析與討論，並以實際元件來說明此材料之發展潛力。
矽基板相較於其它基板(例如：氧化鋁、碳化矽)擁有與價格便宜之優勢，適合大面積成長，且易與IC製程整合。利用分子束磊晶所成長出的三族氮化物奈米柱呈垂直於基板的排列，且每一奈米柱皆為無應力之單晶結構，依據螢光光譜量測，氮化鎵奈米柱具有激子的發光特性且有很好的發光效率。確定了氮化鎵奈米柱之優良特性後，我們利用此結構當作模板，並且成功地在上面成長出涵蓋全可見光(400 -700 nm)波段之氮化銦鎵奈米碟。相較於氮化銦鎵薄膜，奈米碟擁有發光參數容易調控，且在長波長範圍之發光強度減弱不如薄膜嚴重。利用這些特性，我們試著將各種不同發光波段之奈米碟依不同厚度與層數疊在一起，利用此概念，成長出不需要利用任何螢光粉輔助之白光發光二極體結構，對白光照明，提供了一個新的解決方法。

Chapter 1    Introduction to III-Nitride Nanorods    1
Chapter 2    Epitaxial Growth and Characterization Methods    7
1    Introduction    7
2    Plasma-Assisted Molecular Beam Epitaxy (PAMBE)    8
3    Reflection High Energy Electron Diffraction (RHEED)    9
4    X-Ray Diffraction (XRD)    10
5    Photoluminescence (PL) and Electroluminescence (EL)    11
Chapter 3    GaN Nanorods    15
1    Introduction    15
2    Growth and in situ RHEED Characterization    16
3    Structural Characterization    20
3.1 Reflection High Energy Electron Diffraction (RHEED) and Field Emission Scanning Electron Microscopy (FESEM)    20
3.2 X-Ray Diffraction (XRD)    23
3.3 Raman Spectroscopy    25
4    Optical Characterization    25
4.1 Room Temperature Photoluminescence    26
4.2 Low Temperature Photoluminescence    27
5    Reflectivity Measurement    28
6    Single p-n Junction GaN Nanorods    40
7    Summary    46
Chapter 4    InGaN Nanorods and Nanodisks    47
1    Introduction    47
2    Green Emission InGaN Nanorod Arrays    47
3    Green Emission InGaN Nanodisks    51
4    Red Emission InGaN Nanodisks    54
5    Summary    60
Chapter 5    InGaN/GaN Nanorod Array Light Emitting Diodes    61
1    Introduction    61
2    Monochromatic Light-Emitting Diodes    63
2.1 Growth and Fabrication Process    63
2.2 Electrical Properties    65
2.3 Optical Properties    66
3    White Light-Emitting Diodes    67
3.1 Growth and Fabrication Process    67
3.2 Electrical Properties    72
3.3 Optical Properties    74
3.4 Colorimetry and Color Rendering    81
4    Summary    85
Chapter 6    InN Nanorods    87
1    Introduction    87
2    Growth    88
3    Structural and Optical Characterization    90
4    Summary    93
Chapter 7    Conclusions and Future Prospects    95
References    97
Curriculum Vitae    103

                                

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Chapter 6
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