本論文採用電子束輻射技術在絕緣閘雙極性電晶體之耐壓飄移區中造成原子錯位(Atomic Displacement)及陷阱中心(Trap Center)來降低飄移區中少數載子生命週期( HL)來增快儲存於磊晶層中超量少數載子的復合速度，因而降低元件關閉時因切換所造成的功率耗損。因為這種技術有較經濟實惠及易於使用的優點，深具市場競增力，目前已廣泛為產業界所使用。
藉由設計一系列電子束輻射劑量，做一完整且詳細的相關研究與討論，探討並歸納出各種設計條件之趨勢及相關性。並利用MEDICI建立電子束輻射引發少數載子結合速度之預測模型及HSPICE電路模型。實驗結果顯示，我們成功開發出台灣第一顆規格達到600V高壓、10A高電流時有2.49V低導通壓降及關閉下降時間為365nsec之高速絕緣閘雙極性電晶體。

本論文大綱架構如下：第一章先詳述絕緣閘雙極性電晶體切換速度之研究動機及方向。第二章將對目前為止切換速度提昇技術的演進發展及相關研究文獻作一系統性的回顧及整理。第三章是元件基本結構、操作原理及基本特性，如崩潰及閂鎖原理。第四章則介紹元件製程、光罩設計、電子束輻射劑量設計考量及回火溫度設計，詳述製程步驟及流程，包含高壓之接面終結設計。第五章則是動態量測架構之建立及IGBT基本靜態及動態模擬結果，接著討論電子束輻射後，MEDICI 元件模型預測及HSPICE 電路模型建立之規劃。第六章則是量測結果與討論，希望藉著量測結果及模型之建立作一完整分析及探討，歸納出理論趨勢，作為日後最佳化設計之參考。第七章將本論文最後做扼要且完整的結論。

Electron Irradiation is a technique used to control the Insulated Gate Bipolar Transistor (IGBT) switching performance. It can reduce the minority carrier lifetime and increase the recombination rate of the excess minority carriers by generating the atomic displacement and trap centers in the drift region of the IGBTs. However, electron irradiation induces undesired effects on other parameters, such as forward voltage drop and threshold voltage.
In this thesis, we design a series of electron irradiation dosage to optimize the steady states and switching performance of IGBTs considering various design parameters. Then, the model of predicting turn-off time is created by two-dimensional simulator MEDICI and circuit simulator HSPICE. Finally, We have successful fabricated IGBT with 600V breakdown voltage, 10A on-current, 2.49V on-state voltage drop at 10A, and high speed, 365nsec turn-off time.

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