本論文中提出並實現俱備高響應度的橫向光電晶體架構，為了避免照光時基板的慢速擴散載子對光電晶體響應速度造成影響，我們於元件外部加上保護環結構以隔絕慢速擴散載子的干擾，進而提升整體元件的操作速度。
本論文的橫向光電晶體架構均為不更動任何現有製程條件的情況下，使用TSMC 0.18μm標準CMOS製程製作並在設計上達成低操作電壓下即可實現高響應度的優勢。量測結果顯示出當橫向光電晶體操作在0.5V時，其在特定波長下即能有31.49(kA/W)的響應輸出。相較於常應用於光感測器的異質接面光電晶體來說，在響應度上至少有一個數量級以上的成長。然而受限於元件基極底部的P型阱內部寄生效應影響，使得元件在主動區為10μm×10μm時便有高達1.4ms的下降時間，導致元件響應速度不如預期，為此本論文亦提出改善的方法。
最後，由TCAD模擬結果顯示本次設計之橫向光電晶體主要偵測能力多落於可見光波段，故本論文嘗試將Body-strapped Base機制回收深層基板載子的特性應用於橫向光電晶體架構上，將橫向光電晶體的偵測範圍進一步擴增至近紅外光波段。然而藉由TCAD模擬及實際量測發現Body-strapped Base機制的元件響應度在近紅外光波段時並無顯著增加，為此透過模擬找出問題所在並提出保護環上增設漏電途徑的概念，即可恢復Body-strapped Base機制於近紅外光波段對元件響應度的放大能力。

In this thesis, we propose and realize a lateral phototransistor (LPT) architecture equipped with high-responsivity. To avoid the slow diffusion carriers of P-substrate under illuminated conditions make the response time of phototransistor get worse, we design a guard-ring structure around the device to keep out the disturbance which caused by slow diffusion carriers and then improve the operating-speed of LPT.
In this thesis, we present a lateral phototransistor using the TSMC 0.18μm standard CMOS process without any process modifications and achieve the design merit of high-responsivity under the low operating voltage. Measurement also indicate that the responsivity of LPT will be as high as 31.49(kA/W) under the certain wavelength when the device biases at 0.5V. Comparing with the heterojunction phototransistor (HPT), the responsive growth of LPT has at least surpassed an order of magnitude. However, Response time of LPT is limited by the parasitic effect in the P-well which make the fall time of a 10μm×10μm device up to 1.4ms. Therefore, we also propose some improvement for the degradation of operating-speed.
Finally, the detectability of LPT is mainly situated on the band of visible light that verified by the simulation of TCAD, so we try to add the mechanism called body-strapped base into LPT that raise the detective range of LPT still further. However, simulation and measurement showed that the responsivity of LPT with body-strapped base in the band of near infrared light doesn’t have apparently increase. Therefore, we find out the solution to restore the detectability of LPT with body-strapped base at the band of near infrared light by proposing the notion of setting the leakage path on the floating N-well.

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