隨著電晶體元件縮小，閘極長度也將跟著變短，這讓電晶體元件的操作速度越來越快。然而當閘極長度縮短到一定程度之後，短通道效應也開始產生作用，這會讓我們無法利用調整閘極電壓的方式來控制電晶體元件的啟動與關閉。然而傳統的快速退火製程已逐漸無法應付更淺的元件接面深度要求。因此我們利用微波爐針對利用離子佈植植入不同雜質原子的單晶矽和多晶矽來進行活化退火的熱處理。並且利用四點探針、二次離子質譜儀來分析退火後材料的片電阻和接面深度以及使用穿透式電子顯微鏡來了解表面再結晶的情形。我們發現在適當的微波時間和微波瓦數下能得到較低的片電阻值以及淺的接面深度。

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