本研究欲以雷射直寫方式，形成高密度且具導電性的類奈米碳管(CNT-like)結構應用於奈米連線，主要透過改變沉積非晶碳膜(a-C)所用之碳源氣體(C2H2、CH4)與氫氣之流量比，得到不同特性之a-C，並探討其對以雷射直寫成長CNT-like結構之影響。此外，欲驗證以此技術輔以圖形化定義催化劑，來選擇性成長CNT-like結構，形成以a-C為絕緣層及CNT-like結構為導電層之奈米連線的可行性。
本研究以波長為248 nm之氟化氪準分子脈衝雷射 (KrF excimer laser)為雷射源，並以10 s、1 Hz之條件照射在先後鍍有10 nm Ti、10 nm Ni及30 nm a-C的基座上，結果發現，將雷射能量密度由46 mJ/cm2逐降至36 mJ/cm2之方式，可形成較密之導電CNT-like結構。藉由上述雷射照射方式，針對a-C鍍膜條件之影響作探討，發現以C2H2為碳源氣體所鍍出來的a-C，較有利於以雷射直寫方式成長CNT-like結構，此外，提升C2H2/H2流量比，有助於提高雷射照射後，形成的CNT-like結構之品質和其與基座的附著度。
此外，本研究亦使用有圖形化Ni/Ti催化劑於SiO2/Si上且鍍上a-C之基座，施以雷射照射，以驗證依催化劑的有無來進行選擇性CNT-like結構成長之可行性，於未來應用在形成以a-C為絕緣層和以CNT-like為導電層所構成之奈米連線。

This research is to form high-density, high-conductivity carbon nanotube-like (CNT-like) structures for nano-interconnect application. The effect of amorphous carbon (a-C) characteristics on CNT-like formation was investigated by using C2H2 or CH4 as a reaction gas for a-C deposition with various C2H2/H2 and CH4/H2 ratios. Besides, the feasibility of selective CNT-like structures formation from the a-C film with patterned catalysts underneath was studied so as to form the nano-interconnect composed of insulating a-C and conducting CNT-like structures.
In this research, 248 nm KrF excimer laser light was exposed on the substrates with a-C(30 nm)/Ni(10 nm)/Ti(10 nm) on top for 10 s at 1 Hz to form CNT-like structures. Higher quality of CNT-like structures is achieved at laser energy density ramped from 46 mJ/cm2 to 36 mJ/cm2 gradually. The effect of a-C characteristics on the formation of CNT-like structures was investigated at laser condition as above. It was found that C2H2-deposited a-C films were more suitable for formation of CNT-like structures. Increasing the C2H2/H2 ratio can also improve the quality and adhesion of CNT-like structures on substrates.
The a-C films with patterned Ni/Ti catalyst underneath were deposited on SiO2/Si to verify the feasibility of forming CNT-like structures selectively by laser direct writing for the formation of nano-interconnect consisting of insulating a-C and conducting CNT-like structures.

[1] S. Iijima, Nature 354 (1991) 56
[2] Yao, Z; Kane, C. L.; Dekker, C. Phys. Rev.Lett. 84 (2000) 2491
[3] Hone, J.; Whitnry, M.; Zettle, A. Synthetic Metals 103 (1999) 2489
[4] D. Yokoyama, T. Iwasaki, K. Ishimaru, S. Sato, T. Hyakushima, M. Ninei, Y. Awano, and H. Kawarada, Jpn. J. Appl. Phys. Vol. 47 No. 4 (2008) 1985
[5] M. Katagiri, N. Sakuma, M. Suzuki, T. Sakai, S. Sato, T. Hyakushima, M. Nihei, Y. Awano, Jpn. J. Appl. Phys. Vol. 47 No. 4 (2008) 2024
[6] A. Kawabata, S. Sato, T. Nozue, T. Hyakushima, M. Norimatsu, M. Mishima, T. Murakami, D. Kondo, K. Asano, M. Ohfuti, H. Kawarada, T. Sakai, M. Nihei, Y. Awano, IITC conference (2008) 237
[7] S. Sato, T. Hyakushima, M. Nihei, Y. Awano, Appl. Phys. Lett. 91 (2007) 263101
[8] Y. Awano, IEICE TRANS. ELECTRON. Vol. E89–C No.11 (2006) 1499
[9] Y. Awano, S. Sato, D. Kondo, M. Ohfuti, A. Kawabata, M. Nihei, N. Yokoyama1, Phys. Stat. Sol. Vol 203 No. 14 (2006) 3611
[10] M. Horibe, M. Nihei, D. Kondo, A. Kawabata, Y. Awano, Jpn. J. Appl. Phys. 44 7A (2005) 5309
[11] M. Horibe, M. Nihei, D. Kondo, A. Kawabata, Y. Awano, Jpn. J. Appl. Phys. 43 9A (2004) 6499
[12] M. Nihei, M. Horibe, A. Kawabata, Y. Awano, Jpn. J. Appl. Phys. 43 4B (2004) 1856
[13] F. Kreupl, A.P. Graham, G.S. Duesberg, W. Steinhogl, M. Liebau, E. Unger,W. Honlein, Microelectron. Eng. 64 (2002) 399
[14] G.S. Duesberg, A.P. Graham, M. Liebau, R. Seidel, E. Unger, F. Kreupl, W. Hoenlein, Nano Lett. Vol. 3 No. 2 (2003)
[15] A.P. Graham, G.S. Duesberg, R. Seidel, M. Liebau, E. Unger, F. Kreupl, W. Honlein, Diamond Rel. Mater. 13 (2004) 1296
[16] A.P. Graham, G.S. Duesberg, W. Hoenlein, F. Kreupl, M. Liebau, R. Martin, B. Rajasekharan, W. Pamler, R. Seidel, W. Steinhoegl, W. Unger, Apply. Phys. A, 80 (2005) 1141
[17] A.P. Grahem, G.S. Duesberg, R.V. Seidel, M. Liebau, E. Unger, W. Pamler, F. Kreupl, W. Hoenlein, Small 1 4 (2005) 382
[18] G.S. Duesberg, A.P. Graham, F. Kreupl, M. Liebau, R. Seidel, E. Unger, W. Hoenlein, Diamond Rel. Mater. 13 (2004) 354
[19] J. Li, Q. Ye, A. Cassell, H.T. Ng, R. Stevens, J. Han, M. Meyyappan, Appl. Phys. Lett. 82 15 (2003) 2491
[20] J. Robertson, G. Zhong, H. Teig, C. Thomsen, J.H. Warmer, G.A.D. Briggs, U. Dettlaff-Weglikowska, S. Roth, Appl. Phys. Lett. 93 (2008) 163111
[21] J.C. Coiffic, H. Le Poche, D. Mariolle, N. Chevalier, S. Oliver, M. Fayolle, S. Maitrejean, Microelectron. Eng. 85 (2008)1971
[22] A.B. Kaul, K.G. Megerian, P. von Allmen, R.L. Baron, Nanotechology 20 (2009) 075303
[23] T. Xu, Z. Wang, J. Miao, X. Chen, C.M. Tan, Appl. Phys. Lett. 91 (2007) 042108
[24] T. Iwasaki, R. Morikane, T. Edura, M. Tokuda, K. Tsutsui, Y. Wada, H. Kawarada, Carbon 45 (2007) 2351
[25] 吳昱璁，國立清華大學 材料科學工程所碩士論文(民國九十六年七月)
[26] Y.T. Wu, H.C. Su, C.M. Tsai, K.L. Liu, G.D. Chen, R.H. Huang, T.R. Yew, Appl. Phys. Lett. 93, (2008) 023108
[27] J. Robertson, Prog. Solid State Chem. 21 (1991) 199
[28] J. Robertson, Adv. Phys. 35 (1986) 317
[29] M.F. Doemer, R.L. White, MRS Bull. (1996) 28
[30] A.H. Lettington, Proc. R. Soc. A 342 (1993) 287
[31] J.D. Kim, K.H. Lee, K.Y. Kim, H. Sugimura, O. Takai, Y. Wu, Y. Inoue, Surf. Coat. Tech. 162 (2003) 135
[32] J. Robertson, Mat. Sci. Eng. R 37 (2002) 129
[33] S. Aisenberg, R. Chabot, J. Appl. Phys. 42 (1971) 2953
[34] F. Jansen, M. Mackonkin, S. Kaplan, S. Hark, J. Vac. Sci. Tech. A 3 (1985) 605
[35] D.R. McKenzie, Rep. Prog. Phys. 59 (1996) 1611
[36] A.A. Voevodin, M.S. Donley, Surf. Coat. Tech. 82 (1996) 199
[37] P. Koidl, C. Wagner, B. Dischler, J. Wagner, M. Ramsteiner, Mater. Sci. Forum 52 (1990) 41
[38] M. Weiler, K. Lang, E. Li, J. Robertson, Appl. Phys. Lett. 72 (1998) 1314
[39] S.R.P. Silva, J.D. Carey, R.U.A. Khan, E.G. Gerstner, J.V. Anguita, in: H.S. Nalwa (Ed.), Amorphous Carbon Thin Films, vol. 4, Handbook of Thin Film Materials, Academic Press (2002) 403
[40] J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 15 (1966) 627
[41] International Technology Roadmap for Semiconductors (ITRS) 2007 edition Interconnect (2007)
[42] M. Morgen, et al, Am. Rev. Mater. Sci. 30 (2000) 645
[43] A. Grill, V. Patel, J. Appl. Phys. 85 (1998) 3314
[44] A. Grill, Diamond Rel. Mater. 10 (2001) 234
[45] S.P. Louh, I.C. Leu, M.H. Hon, Diamond Rel. Mater 14 (2005) 1000-1004
[46] S.P. Louh, M.H. Hon, Diamond Rel. Mater. 14 (2005) 1815
[47] C.H. Lai, W.S. Lai, H.C. Chiue, H.J. Chen, Thin Solid Films 510 (2006) 125
[48] H. Ishikawa, T. Nozawa, T. Matsuoka, A. Teramato, M. Hirayama, A, T. Ito, T. Ohmi, Jpn. J. Appl. Phys. 47 (2008) 2531
[49] S.Iijima, T. Ichihashi, Nature 363 (1993) 603
[50] Z.F. Ren, Z.P. Huang, J.W. Xu, J.H. Wang, P. Bush, M.P. Siegal, P.N. Provencio, Science 202 (1998) 1105
[51] S. Fan, M.G. Chaplin, N.R. Franklin, T.W. Tombler, A.M. Cassell, H. Dia, Science 283 (1991) 512
[52] S. Botti, R. Ciardi, L. Asilyan, L. De Dominicis, F. Fabbri, S. Orlanducci, A. Fiori, Chem. Phys. Lett. 400 (2004) 264
[53] S. Botti, L. Asilyan, R. Ciardi, F. Fabbri, S. Loreti, A. Santoni, S. Orlanducci, Chem. Phys. Lett. 396 (2004) 1
[54] M. Kusunoki, M. Rakkaku, T. Suzuki, Appl. Phys. Lett. 71 (1997) 2620
[55] M. Kusunoki, T. Suzuki, T. Hirayama, N. Shibata, Appl. Phys. Lett. 77 (2000) 531
[56] H. Takikawa, R. Mirano, M. Yatsuki, T. Sakakibara, Jpn. J. Appl. Phys. Part 237 (1998) L187
[57] J.G. Buijnsters, R. Gago, I. Jimenez, M. Camero, F. Agullo-Rueda, C. Gomez-Aleixandre, J. Appl. Phys. 105 (2009) 093510
[58] 丁勝懋，”雷射工程導論”修訂第四版，中央圖書出版社(2006)。
[59] 汪建民，”材料分析”，中國材料科學學會(1998)
[60] H. Hiura, T. W. Ebbesen, K. Tanigaki, H. Takahashi, Chem. Phys. Lett. 202 (1993) 509
[61] B. K. Kim, T. A. Grotjohn, Diamond Rel. Mater. 9 (2000) 37
[62] A.C. Ferrari, J. Robertson, Physical Review B Vol. 61 No. 20 (2000) 14095
[63] B. Dischler, A. Bubenzer, P. Koidl, Solid State Comun. 48 (1983) 105