矽晶太陽能電池表面鈍化層之量測與分析-介面缺陷濃度與載子捕捉截面積

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研究生：	林聖偉 Lin, Sheng-Wei
論文名稱：	矽晶太陽能電池表面鈍化層之量測與分析-介面缺陷濃度與載子捕捉截面積 Surface Passivation’s Analysis -Density of Interface State and Capture Cross Section
指導教授：	甘炯耀 Gan, Jon-Yiew
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2010
畢業學年度：	98
語文別：	中文
論文頁數：	84
中文關鍵詞：	矽晶太陽能電池、介面缺陷濃度、載子捕捉截面積、生命載子週期、電導法、電容-電壓曲線
外文關鍵詞：	silicon solar cell, capture cross section, interface state density, MWPCD lifetime measurement, C-V method, conductance method
相關次數：	點閱：3 下載：0
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本研究透過簡單的製程，將SiO2與Si3N4的表面鈍化層，鍍覆上電極，做成MIS結構，利用Nicollian與Goetzberger所建立的電導法，來探討介面缺陷濃度以及載子捕捉截面積，藉此研究表面鈍化層的好壞。並比較退火處理前後的差異。
另外，利用高低頻電容-電壓曲線來佐證電導法的正確性，以及用Microwave PCD來討論和有效生命載子週期的關係，並探討著可能產生量測誤差的因素，並給予修正。藉由以上資訊，來估算(1)介面缺陷濃度所造成的表面復合速率，(2)鈍化層固定電荷所造成的場效應影響。

目  錄
摘要    I
致謝    II
Chapter 1 簡介與動機    1
1 前言    1
2 研究動機    3
Chapter 2 電導法的理論與應用    5
1簡介：    5
2 基板缺陷之等效電路：    6
2.1電子電流密度之等效電路：    9
2.2電洞電流密度之等效電路：    12
3單一介面缺陷    13
4 連續介面缺陷    16
5 量測等效電路之換算：    23
6 載子捕捉截面積：    24
7閘極偏壓與能帶彎曲(band bending)關係    26
Chapter 3 實驗步驟及流程    30
1 絕緣層的製備（表面鈍化層）    30
1.1 氧化層    30
1.2 氮化矽層    31
1.3 退火    31
2 去除背面絕緣層    31
2.1 塗佈光阻    31
2.2 背面蝕刻    31
3 製作上電極    32
4 薄膜厚度量測    32
5 電性量測    33
5.1 電導量測與高頻電容量測    33
5.2 準穩態電容量測    33
6 載子生命週期量測    33
Chapter 4 結果與討論    38
1串聯電阻的影響    38
2 介面缺陷濃度Dit    40
2.1 介面缺陷濃度Dit 與閘極偏壓VG的關係    40
2.2計算閘極偏壓與表面電位(Surface potential)之關係    41
2.3與高低頻C-V量測之比較    43
3 退火效果    43
3.1 決定介面缺陷位置    43
3.2 退火前後比較    44
(a) 表面電位計算Midgap    44
(b) 退火前後介面缺陷濃度Dit比較    45
4載子捕捉截面積    45
4.1載子捕捉截面積推算生命載子週期    45
4.2 MWPCD量測生命載子週期    46
5場效應影響    47
6 特殊曲線    49
6.1 高頻C-V曲線-累積區不一致    49
6.2 高頻C-V曲線-反轉區變化    50
Chapter 5 結論    80
Chapter 6 參考文獻    81

                                

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