近代矽基半導體基本遵循摩爾定律作為發展準則；單位面積內場效電晶體數量逐年成倍成長，且對應製程成本為前一世代一半。科技進展首要考量高效能以及元件尺度微縮化之下耗能表現，但依照目前科技進程，元件尺寸微縮化即將觸碰到其對應的物理極限。工業界以及學術界為跳脫相關束縛皆發表了數種因應方案，例如，鰭式場效電晶體、探詢替代半導體材料(例如:石墨烯，以及過度金屬硫族化物)，以及自旋電子學和能谷電子學的發展等等。自旋電子學為一跨領域學科，且係利用固態系統當中電子自旋自由度作為操控單元。相對的，能谷電子學則蘊含著類似的物理機制，但物理本質上具有甚大的差異。這本論文則著重在石墨烯層狀系統當中理論以及實驗能谷電子學的探討。

這本論文基本上分為以下幾個章節，理論以及實驗的探討分別位於章節2，以及章節3與4做討論。章節1首先介紹基本二維材料。章節2討論近代能谷電子學發展，以及在二維六角蜂巢結構晶格當中的相關應用。章節3鎖定石墨烯以及硼化氮垂直異質結構的探討。章節4則利用直接電漿曝射化學氣象沉積系統成長具有小角度分布雙層旋轉石墨烯薄膜之成長結果。以上部分皆和發展能谷電子學有碩大的關聯性。

The number of field-effect transistor (FETs) in a given unit area is doubled as described by Moore’s law, and a continuation of this trend eventually meets the challenge in association with the compelling demand of higher performance and lower power consumption in miniaturization. Both Industrial and academic affiliations have proposed and searched several technological options in order to resolve these issues, for instance, the development of FinFETs, potential substitute semiconductor materials such as graphene and transition metal dichalcogenides (TMDCs), and new device concepts like spintronics and valleytronics. It has been well known that spintronics is a multidisciplinary field whose central theme is the active manipulation of spin degree of freedom in solid-state systems. For valleytronics, analogous manipulation mechanism and physical concepts have been investigated but there are very significant differences. This thesis aims to explore valley pseudospin physics and corresponding applications, both theoretically and experimentally, in a well-known two-dimensional material, graphene and its bilayer structure (Bernal stacking bilayer graphene).

This thesis is separated into theoretical and experimental parts. Theoretical investigations will be presented in Chapter 2. Experimental demonstrations are given in Chapter 3 and Chapter 4. Chapter 1 focuses on a fundamental discussion of two-dimensional materials. Chapter 2 explains concepts of valley pseudospin physics in graphene systems with the breaking of inversion symmetry. The non-relativistic Schrodinger-type theory, valley-orbit interaction (VOI), and its associated mechanism will be covered. We also discuss potential applications based on VOI, for instance, valley FETs, valley filters, and valley qubits. In chapter 3, we discuss our experimental study of fundamental properties of h-BN and graphene system based vertical heterostructure. This study is beneficial for future work in realizing the valley pseudospin based electronics we have explored in recent years. In Chapter 4, we describe our experimental work where the direct plasma-enhanced chemical vapor deposition (PECVD) system was employed to grow mm-size large twisted bilayer graphene film, in which the spread of twisted-angle between layers can be controlled around 7o over mm-sized twisted bilayer graphene film. All these works are considered to be necessary fundamental efforts towards future valleytronic device realization.

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