為了了解共軛高分子MEH-PPV本身的發光性質，我們藉由合成的方式在處理過的矽晶片上接枝單分子層的MEH-PPV作為研究其發光行為的平台。矽晶片表面先以3-aminopropyl-trimethoxysilane後，我們再使用兩種不同的方法: Graft-from以及Graft-to進行接枝。而接枝上的MEH-PPV高分子的表面形貌隨著兩種不同接枝方法有著極大差異，此差異的主要原因是由於利用兩種不同接枝方法所造成的接枝MEH-PPV間距離的差異。藉由UV-Vis吸收光譜與AFM之Bearing　ratio計算出接枝距離的變化: 由Graft-from方法中，最密集的0.54 nm，到Graft-to中隨反應時間不同產生34~7.3 nm間的距離差異。在Graft-from的結果中，由於接枝點間距離非常近，使得接枝的高分子(Rg ~ 4.13 nm)無法容納在此小體積中因此產生輕微的排擠效應，造成高分子鏈會傾向往垂直基材的方向生長，形成分子刷。另一方面，在Graft-to中的接枝高分子並未受到側向壓縮，因此在溶液中形成膨潤的鏈型而在空氣中因崩塌而攤平在基材上。而對於接枝MEH-PPV之螢光行為，在graft-from實驗中，接枝的 MEH-PPV發光峰可以藉由控制反應使其由434 nm逐漸轉變到 550 nm。對於graft-to實驗，用來反應之MEH-PPV溶液發光峰對於16k 為470 nm而55k為550 nm ，但接枝後MEH-PPV的發光峰在乾燥環境下量測，16k的MEH-PPV在415~430 nm而55k的MEH-PPV結果在434~460 nm。然而，當graft-to樣品在溶劑環境中量測PL時，16k的接枝MEH-PPV在470nm而55k的結果為550nm，並且此現象是可重複出現的。而在55k的MEH-PPV結果中其藍位移較16k的MEH-PPV顯著。此巨大藍位移的現象主要是因為接枝高分子鏈在崩塌時，產生了高度的交纏現象並在高分子回縮的過程中與基材間產生拉扯，因此相對於在溶劑中高分子是不受拉扯的情形下具有較短的共軛長度。此拉扯主要是來自當溶劑揮發後導致MEH-PPV高分子鏈處在非平衡態之鏈型且被基材所限制住。藉由比較不同接枝密度的螢光光譜結果，拉扯效應在MEH-PPV接枝較少時其效果越顯著，這是由於接枝MEH-PPV與基材的接觸面積變小。而螢光光譜之結果也顯示接枝較少時的MEH-PPV螢光強度較密集接枝的結果大了3倍。

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