本論文的研究分文三部分，「改善氧化鋁起泡現象」、「局部背接觸電極之多晶矽太陽能電池製作」、「氧化矽/氧化鋁薄膜分析」。
ALD沉積氧化鋁薄膜經過溫度處理後，例如PECVD沉積氧化矽，會有起泡（Blistering）現象產生。本研究首要目的是改善起泡現象，在室溫下將矽晶片浸泡在濃硝酸溶液(69-wt%)生長氧化矽層，使晶片表面產生親水性，再用ALD沉積氧化鋁在具有親水性表面的矽基板上並進行退火處理，隨後用PECVD沉積氮化矽，再經由光學顯微鏡觀察，結果發現起泡面積由12.5%改善至0.7%及0%。
局部背接觸電極之多晶矽太陽能電池是以氧化矽/氧化鋁薄膜作為背面鈍化層，使用雷射在背面作局部線狀開孔，以網印方式印刷金屬電極，再經由產線上的燒結爐燒結形成局部背表面場，元件平均轉換效率17.39%，比較參考片下降0.05%，但是平均短路電流提升0.04安培，波長750nm～1100nm的外部量子效率有明顯提升。
XPS量測的鋁原子2p軌域訊號顯示退火後鈍化層內的鋁原子空缺數量上升，表示鋁原子空缺造成負電荷密度上升，提升場效鈍化效果。

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