使用氧化鈦鋯與氧化鈦鑭高介電常數堆疊介電層於金屬-絕緣層-金屬電容之研究

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研究生：	林郁博 LIN, YU-BO
論文名稱：	使用氧化鈦鋯與氧化鈦鑭高介電常數堆疊介電層於金屬-絕緣層-金屬電容之研究 Investigation of High-Performance Metal-Insulator-Metal Capacitor Using ZrTiOx/ZrLaOx Stacked Dielectrics
指導教授：	巫勇賢
口試委員:	吳永俊高瑄苓
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2012
畢業學年度：	101
語文別：	中文
論文頁數：	65
中文關鍵詞：	ZrLaO 、ZrTiO 、MIM 、high-k
相關次數：	點閱：3 下載：0
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在本篇論文中我們探討以ZrLaOx/ZrTiOx/ZrLaOx堆疊介電層作為金屬-絕緣層-金屬(Metal-Insulator-Metal, MIM)電容的介電層。我們發現以單層的ZrTiOx介電層的MIM電容具有負的非線性電壓電容係數，其介電常數高達22.5。而單層的ZrTiOx介電層MIM電容具有正的非線性電壓電容係數和高介電常數25.8。藉由整合ZrLaOx與ZrTiOx兩種金屬氧化物作為MIM電容的介電層，我們實現非線性電壓電容係數的"抵消效應"並且得到高電容密度的成果。以ZrLaOx/ZrTiOx/ZrLaOx堆疊結構的MIM電容可以得到高電容密度14.6 fF/μm2和很小的非線性電壓電容係數33 ppm/V2，並且在頻散現象、溫度穩定性、可靠度方面和不錯的漏電流密度(在-1V時2.5×10-7 A/cm2 )，根據以上結果顯示，ZrLaOx/ZrTiOx/ZrLaOx堆疊介電層應用於下一是世代的高性能MIM電容是具有很大的潛力。

Metal-insulator-metal (MIM) capacitors with ZrLaOx/ZrTiOx/ZrLaOx laminate as the insulator were explored in this work. Single ZrTiOx dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC-α) with a high-κ value of 22.5. By integrating this dielectric with ZrLaOx which provides a positive VCC-α and a high κ value of 25.8, the “canceling effect” of VCC-α can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminate structure display desirable characteristics in terms of a capacitance density of 14.6 fF/μm2, a low VCC-α of 33 ppm/V2, negligible frequency dispersion and satisfactory leakage current of 2.5×10-7 A/cm2 at -1 V. These results show that the ZrLaOx/ZrTiOx/ZrLaOx laminate holds the great potential to be applied to next-generation high-performance MIM capacitors.

總目錄
摘要.............................................................................................................................................i致謝..........................................................................................................................................iii總目錄.......................................................................................................................................iv表目錄.......................................................................................................................................vi圖目錄.....................................................................................................................................vii

第一章 序論..............................................................................................................................1
1-1 背景介紹............................................................................................................1 1-2    MIM電容的結構與特性..................................................................................2 1-3    MIM電容的應用...............................................................................................3 1-4    研究動機............................................................................................................4 1-5    論文結構............................................................................................................5

第二章 文獻回顧....................................................................................................................10
2-1    高介電常數材料的發展..................................................................................10 2-2    介電層厚度與電壓電容係數的相關性..........................................................11 2-3    以SiO2與high-κ材料為MIM電容的介電層................................................12 2-4    以high-κ材料為MIM電容的介電層.............................................................12

第三章    實驗流程..................................................................................................................17
3-1    實驗規劃..........................................................................................................17 3-2    TaN/ZrTiOx/TaN電容製程.............................................................................17 3-3    TaN/ZrLaOx/ZrTiOx/ZrLaOx/TaN電容製程...................................................18 3-4    電容電性分析..................................................................................................19

第四章    實驗結果與討論......................................................................................................25
4-1    MIM電容的重要物理參數與物理現象.........................................................25
4-1-1    MIM電容的電壓電容係數.............................................................25 4-1-2    MIM電容的抵消效應.....................................................................28
4-2    單層ZrTiOx介電層的MIM電容的電性分析................................................28 4-3    ZrTiOx/ZrTiOx/ZrTiOx薄膜物理特性分析.....................................................30
4-3-1    高解析電子能譜儀..........................................................................30 4-3-2    X射線繞射分析(X-ray Diffraction)................................................30 4-3-3    原子力顯微鏡分析(AFM)..............................................................31
4-4    ZrLaOx/ZrTiOx/ZrLaOxMIM電容的電性分析...............................................32
4-4-1    MIM電容的電容特性.....................................................................32 4-4-2    MIM電容的漏電流特性.................................................................33 4-4-3    漏電機制的模擬分析......................................................................34 4-4-4    MIM電容的頻散現象和電容溫度係數分析.................................36

第五章    結論..........................................................................................................................53 參考文獻..................................................................................................................................55
圖目錄
第一章........................................................................................................................................1
圖1-1    各種不同堆疊結構的MIM電容(a)薄片式(b)堆疊式(c)三明治式.................8圖1-2    包含MIM電容的DRAM 結構剖面圖............................................................9圖1-3    包含MIM電容的數位-類比混合訊號電路的截面圖.............................9
第二章......................................................................................................................................10
圖2-1    各種介電材料之能帶寬度..............................................................................14 圖2-2    能帶寬度對介電常數比較圖..........................................................................14 圖2-3    介電層厚度與電壓電容係數關係圖..............................................................15 
圖2-4    MIM電容的normalized C-V圖(a)HfO2 MIM電容(b)SiO2 MIM電容.........16
第三章......................................................................................................................................17
圖3-1    TaN/ZrTiOx/TaN電容製程步驟圖.................................................................21 圖3-2 TaN/ZrLaOx/ZrTiOx/ZrLaOx/TaN電容製程步驟圖........................................24
第四章......................................................................................................................................25
圖4-1    類比轉數位電路的輸出對輸入圖，圖中包含了理想的輸出對輸入曲線和受        非線性電壓係數影響的曲線..........................................................................39 圖4-2    MIM電容的normalized C-V圖 (a)具有負α值的MIM電容(b)具有正α值        的MIM電容....................................................................................................40
圖4-3    HfO2/SiO2堆疊介電層MIM電容的α值相消示意圖.................................41
圖4-4    有無熱處理的ZrTiOx MIM電容的normalized C-V圖.................................42
圖4-5    有無熱處理的ZrTiOx MIM電容的C-V圖....................................................42
圖4-6    不同厚度ZrTiOx MIM電容的normalized C-V圖.........................................43 圖4-7    ZrTiOx MIM電容的XPS分析........................................................................44 圖4-8    對不同薄膜的XRD分析................................................................................44 圖4-9    AFM分析(a)剛沉積的ZrLaOx/ZrTiOx/ZrLaOx薄膜(b)熱處理後的
ZrLaOx/ZrTiOx/ZrLaOx薄膜...........................................................................45
圖4-10不同介電層的MIM電容的C-V圖................................................................46
圖4-11不同介電層的MIM電容的normalized C-V圖.............................................47
圖4-12模擬的α值對電容密度圖..............................................................................47
圖4-13不同介電層的MIM電容的漏電流密度對電壓圖........................................48
圖4-14 MIM電容的能帶比較圖(a)ZrTiOx MIM電容(b) ZrLaOx/ ZrTiOx/ ZrLaOx 
         MIM電容.......................................................................................................49
圖4-15漏電機制模擬圖.............................................................................................50
圖4-16不同介電層的MIM電容的電容密度對頻率圖............................................51
圖4-17不同介電層MIM電容的normalized capacitance對溫度圖.........................51
圖4-18 ZrLaOx/ ZrTiOx/ ZrLaOx MIM電容的可靠度分析.......................................52
圖4-19各種介電層MIM電容之比較圖....................................................................52
表目錄
第一章........................................................................................................................................1
表1-1    各種高介電常數材料的基本電性....................................................................6表1-2    2011 ITRS 射頻電路上被動元件技術設計藍圖............................................7 

                                

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