研究生: |
陳志強 Chih-Chiang Chen |
---|---|
論文名稱: |
氣相法製備摻雜之硒化鎘和二氧化鋯一維奈米材料與其應用 Preparation and applications of doped 1-D nanostructures of cadmium selenide and zirconium dioxide with vapor-deposition processes |
指導教授: |
呂世源博士
Dr. Shih-Yuan Lu |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
論文出版年: | 2007 |
畢業學年度: | 95 |
語文別: | 中文 |
論文頁數: | 111 |
中文關鍵詞: | 一維奈米材料 、氣相沉積法 、硒化鎘 、稀磁性半導體 、超順磁性 、二氧化鋯 、氧化釔穩定氧化鋯 、導氧離子性 、固態氧化物燃料電池電解質 |
外文關鍵詞: | one-dimension nanomaterials, vapor-deposition processes, cadmium selenide, diluted magnetic semiconductor, superparamagnetism, SPM, zirconium dioxide, yttria- stabilized zirconia, YSZ, oxygen ion conductivity, solid oxide fuel cell electrolyte |
相關次數: | 點閱:3 下載:0 |
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本研究針對硒化鎘(cadmium selenide, CdSe)與二氧化鋯(zirconium dioxide, ZrO2)的一維奈米材料製備與應用,進行研究與探討。在硒化鎘製備部份,藉由導入先驅物CdSe粉末和利用蒸氣-液滴-固體(vapor-liquid-solid, VLS)成長機制於物理氣相沉積系統(physical vapor deposition, PVD)中成功地製備出CdSe的一維奈米線結構,並討論在不同製備條件下奈米線成長的分析與機制。在應用部份,導入摻雜物於CdSe的一維奈米線中,如在CdSe一維奈米線掺雜些許的帶有磁性的Mn原子使成為稀磁性半導體奈米線(diluted magnetic semiconductor nanowire),並探討在三種不同摻雜濃度(0.4、0.8與1.4mol %)下,Mn對稀磁性半導體奈米結構與磁性檢測的影響。三種不同摻雜濃度下之奈米線在隨著摻雜濃度上升時,遮蔽溫度與鐵磁性之矯頑力皆有增加的趨勢。在二氧化鋯製備部份,藉由導入先驅物Zr(C5H7O2)4粉末和氧氣,利用有機金屬化學氣相沉積法(metal-organic chemical vapor deposition, MOCVD)製備出ZrO2的一維奈米柱陣列結構,並討論在不同製備條件下奈米柱成長的性質,在製備溫度大於700℃所製備出的奈米結構均包含單斜與正方晶相,最後証實兩組晶相是在成核階段所形成。在應用部份,則導入三氧化二釔(yttria, Y2O3)成分於ZrO2的一維奈米柱中,成為一般應用在固態燃料電池(solid oxide fuel cell, SOFC)中電解質之氧化釔穩定氧化鋯(yttria- stabilized zirconia, YSZ)的一維奈米柱陣列結構,三組不同釔比例分別由TEM-EDS確認為0.8(單斜晶相)、13(正方晶相)、20與45mol%。但最適當三氧化二釔之摻雜量(10 mo%)之結構發現YSZ一維奈米柱陣列結構的導氧離子性僅有理論經驗式的18-31%。而藉由Arrhenius關係式的分析後顯示活化能Ea大於理論經驗式之活化能Ea。未來可以考慮利用將YSZ一維奈米柱陣列結構製備更為緻密、將白金電級與YSZ一維奈米柱陣列結構之間燒結更緊密與適合的共摻雜系統的改善方法來改善YSZ一維奈米柱陣列結構之導氧離子性。
The present research focuses on the preparation and applications of the one-dimensional (1-D) nanostructures of cadmium selenide (CdSe) and zirconium dioxide (ZrO2) fabricated via the vapor phase based deposition processes. First, for the preparation of the CdSe nanowires, we developed a PVD process with the VLS growth mechanism. SEM, XRD, TEM, PL, and UV-vis analyses were conducted and the plausible growth mechanism of the 1-D CdSe nanowires was proposed and discussed. Second, for the application of the cadmium selenium nanowires, a low molar ratio of Mn was doped into the CdSe nanowires to produce CdSe based diluted magnetic semiconductor (DMS) nanowires. The Mn content (0.4、0.8 and 1.4 mol%) was found to affect the magnetic property of the present DMS nanostructure. For example, the blocking temperature (TB) and the coercivity of the ferro-
magnetism state increase with increasing Mn doping concentration. For the preparation of ZrO2 nanorod array, we developed an MOCVD process. When the furnace temperature was above 700℃,the monoclinic and tetragonal phases would both exist in the product nanorod array. Lastly, the additive Y2O3 was doped into the ZrO2 nanorod array to prepare yttria-stabilized-zirconia (YSZ) nanorod arrays. The Y content of 0.8(monoclinic)、13(tetragonal)、20 and 45 mol % was determined by TEM-EDS. The oxygen ion conductivity of the YSZ nanorod array with Y2O3 content of 10 mol% is only 18-31% for the empirical equation 8- YSZ nano-powders because the activation energy of the YSZ nanorod array is larger than the empirical equation. The more compact YSZ nanorod structure, the compact sinter between Pt electrode and YSZ nanorod structure and optimal co-doping system can be used to improve the oxygen ion conductivity in the future.
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