雙層多晶矽微機電製程平台-MOSBE，以目前最通用之多晶矽薄膜製程技術為主軸，整合體蝕刻製程(bulk micromachining)、兩階段自對準深蝕刻(self-aligned)、多晶矽孔道回填(trench-refill)、正面結構蝕刻(front-side etching)等多項技術。此製程提供設計者於結構厚度與垂直深度上的變化來完成三維結構的設計；目前已成功開發出多項光學元件，證明其符合光學結構之設計需求。微感測器在微機電系統中，是非常重要的應用。於現今多元化的數位時代，消費性電子產品透過周圍環境訊號的偵測與擷取，將可即時達成人機介面的整合。電容原理所開發之感測元件具備多項優點，透過電極板的位移使電容產生變化，來進行環境訊號的偵測。本研究將透過兩種常用之電容感測模式來進行元件的設計開發，藉此驗證製程平台的通用特性，符合電容式感測元件的設計需求。研究將以三種感測元件的開發為例，首先以剛性振膜微麥克風為例，透過出平面方向之間隙閉合模式(gap-closing)，偵測聲音訊號的變化。接著以擺錘式雙軸微加速度計為例，透過重合面積改變模式(area-change)，進行加速度的感測。最後以三軸加速度計為例，透過出平面方向及同平面方向之間隙閉合模式，進行加速度的感測。藉由各式電容感測模式的元件開發，來完成MOSBE 微機電製程平台的通用特性驗證。

The two polysilicon MEMS fabrication platform MOSBE is base on the popular polysilicon thin-film fabrication technology. MOSBE integrated bulk micromachining, self-aligned, trench-refill, front-side etching. This process provides the designer on the thickness of the structure and vertical depth changes to complete the three-dimensional
structure. Presently MOSBE has successfully developed a number of optical devices that using in optical components can be confirmed. Micro sensors are very important devices in MEMS. Consumer electronics products detection and acquisition by the environment signal, thus the micro-sensors can be integrated to achieve real-time human-machine
interface. Capacitive sensing device have many advantages, however resulting from the displacement of the electrode plate capacitance change, environmental signals can be detected. Capacitive micro sensors detected environmental signals by the displacement of the electrode plate and then
capacitance change. In this study, the micro capacitance devices have successfully developed with MOSBE platform. Two capacitance sensing method has been proved by MOSBE platform. It does conform to micro capacitance device performance. First, the rigid diaphragm microphone sensing signals method by out-of-plane gap-closing. Second, the 2-axis accelerometer sensing method by in plane area change. Final, the 3-axis accelerometer sensing method by in plane gap closing (x-axis and y-axis) and out-of-plane gap closing (z-axis). Therefore, the MOSBE fabrication platform has successfully developed with the capacitance devices.

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