本論文主旨是在進行高電壓4H-碳化矽蕭基二極體的研製。由於傳統蕭基二極體操作在反向偏壓時，有著漏電流過大的缺點，而導致其崩潰電壓過低。為了降低此效應對元件效能所造成的影響，我們利用了離子佈植形成P+點狀的方式設計了接面位障（JBS）的結構。降低元件操作在反向電壓時所產生的巨大漏電流。此外，我們也結合了溝渠（mesa）與接面終結延伸（Junction Termination Extension, JTE）形成Mesa-JTE的邊緣終結結構。Mesa-JTE的優點是可降低崩潰電壓對於JTE濃度摻雜的依賴性。
於本論文中，我們將製作了不同寬度的JBS與不同長度的JTE結構。從量測結果可看出，JBS確實可以有效降低元件反向漏電流外，當JTE的長度越長，則元件的崩潰電壓越高。經過量測後，在鎳-JBS上，最佳的崩潰電壓可達1600伏特。

The main purpose of this thesis is to fabricate a high voltage 4H-SiC schottky diode. The conventional schottky barrier diodes (SBDs) typically have large leakage current when they are biased in a reverse condition, and their breakdown voltage is low. In order to reduce this leakage current, we designed Junction Barrier Controlled Schottky diodes (JBS) by forming P+ grid using ion implant. Furthermore, we also designed a combination of the mesa and junction termination extension (Mesa-JTE) structure to form edge termination of the diodes. The advantage of Mesa-JTE is reducing the dependence of breakdown voltage on JTE dose.
JBS and JTE structures with difference size and difference JTE widths are fabricated. The measurement results show that the JBS structure can reduce the reverse leakage current effectively and the breakdown voltage increase with the JTE length. The best achieved breakdown voltage is 1600V, measured on a Ni-JBS diode.

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