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研究生： 林哲宇
Lin, Jhe-Yu
論文名稱： 鋁誘發非晶矽結晶之反應探討
The Reaction of Aluminum-Induced Amorphous Silicon Crystallization
指導教授： 蔡哲正
Tsai, Cho-Jen
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2009
畢業學年度： 97
語文別： 中文
論文頁數： 61
中文關鍵詞： 多晶矽 、鋁誘發 、薄膜 、氧化層
相關次數： 點閱：3  下載：0 
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    • 對於許多電子元件及太陽能電池而言，在玻璃基板上使用簡單製程製造出多晶矽，乃是相當有吸引力的低成本目標。利用金屬誘發非晶矽結晶擁有這樣的潛力。使用鋁誘發時，可在較低溫度下退火，獲得大晶粒的多晶矽，且由於鋁-矽不具有穩定化合物，所以能夠產生連續的多晶矽薄膜，鋁誘發的反應又稱為鋁誘發薄膜互換反應。
    本實驗在一般蓋玻片的玻璃基板上先後鍍上50nm的鋁及60nm的非晶矽，兩層薄膜間的介面不具有氧化鋁層，以200∼300℃區間溫度進行後，在不同退火溫度及退火時間下取出試片，以光學顯微鏡觀察玻璃與鋁介面出現黑色區域的覆蓋率，即為多晶矽的置換率。再將各覆蓋率進行Avrami’s equation擬合之後，得到的n值誤差過大，無法以Avrami’s equation解釋此反應機制。在不同溫度的S曲線，取反應由0%∼50%的時間，求得整體活化能約為0.13eV，較文獻中所得的值小了許多，影響活化能差異的最大因素可能是介面的氧化鋁層。另以反應20%∼80%所需的時間，求得反應活化能約為0.17eV，即便以k值以Arrhenius法則來計算活化能，得到的活化能數值依然相當低，約為0.15eV。
    觀察置換反應中，成核點的數量隨時間的改變無法得到飽和的趨勢，乃是受限於本實驗觀察的方式；當非晶矽薄膜厚度較薄時，觀察到的晶粒有更為明顯的樹突狀結構，可能因殘留的鋁所致，也影響到覆蓋率，且有機會得到更大的晶粒。

    摘要..............................................I Abstract..........................................II 誌謝..............................................III 目錄..............................................IV 圖目錄............................................V 第一章：緒論......................................1 1-1.前言..........................................1 1-1-1.簡介........................................1 1-1-2.太陽能電池的種類概述........................2 1-1-3.多晶矽製程的比較............................3 1-2.研究動機......................................4 1-3.文獻回顧......................................5 1-3-1.鋁誘發非晶矽結晶............................5 1-3-2.以熱力學解釋機制............................7 1-3-3.觀察置換比例................................10 1-3-4.膜厚比例的影響..............................10 1-3-5.Avrami’s equation的擬合....................12 1-3-6.中斷反應的影響..............................13 1-3-7.置換反應的不同階段..........................15 1-3-8.成核數量與退火時間的關係....................16 第二章：實驗方法..................................24 2-1.實驗流程......................................24 2-2.試片..........................................25 2-2-1.試片選擇....................................25 2-2-2.試片準備....................................25 2-2-3.試片清洗....................................25 2-2-4.鍍膜........................................26 2-2-5.退火........................................26 2-3.量測方法......................................28 2-3-1.光學顯微鏡..................................28 2-3-2.XRD .........................................28 第三章：結果與討論................................33 3-1.置換比例隨退火時間之變化......................33 3-2.由XRD分析確定出現結晶矽.......................34 3-3.以不同溫度擬合S曲線...........................34 3-4.介面性質造成置換反應的影響....................37 3-5. n值受介面之影響..............................40 3-6.反應活化能....................................41 3-7.成核點的變化..................................43 3-8.覆蓋率隨膜厚增厚的改變........................44 3-9.鋁-矽膜厚比例對晶粒尺寸的影響.................45 第四章：結論......................................58 文獻回顧..........................................60

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