本實驗中，金屬(Al )/氧化鉿(HfO2)/半導體(p-Si)結構的電容器成功地被製作，HfO2薄膜使用射頻磁控濺鍍法沈積。並對元件作基本的變溫電性量測，溫度範圍在77 K至465 K，並充分討論漏電流機制。結果顯示在累積區偏壓為1 V時漏電流約為10-6 A/cm2，介電常數為14.00，溫度範圍在498 K以上，所得到的結果顯示在低電場( 1.0 MV/cm)，得Al/HfO2界面的電流傳導機制為蕭基發射所主導。溫度在77 K時，所得到的結果顯示在高電場( 1.4 MV/cm)， 電流傳導機制為佛勒-諾德翰穿隧所主導，並可利用蕭基發射及佛勒-諾德翰穿隧分析的結果求得在氧化鉿薄膜中電子的有效質量為0.9 m0 (等效厚度分別為3.9 奈米(nm)) ，並可得到鋁/氧化鉿的位障高為1.03 eV。至於物性分析方面，我們也作了二次離子質譜儀縱深分佈分析、X光繞射分析。
同時也分析其可靠度發現可靠度參數韋布斜率為2.5比起等效厚度的二氧化矽有較好的表現，且運用得到的韋布斜率可用來預測大面積0.1 cm2和小面積10-6 cm2的依時性介電層崩潰時間及10年的操作電壓。由高電場去預測低電場則使用E model 所得到的結果面積小的電容器有較長的生命期，且3.81□ 10-4 cm2的電容在-2.17 V電壓下可存活10年，而10.2□10-4 cm2的電容在-1.3 V電壓下可存活10年。再本實驗中，發現當所施加的應力越大時負電荷捕陷 的現象就顯現的越多。

Metal-insulator-semiconductor (MIS) capacitors that incorporate HfO2 with physical thickness of 14.0 nm gate dielectrics were fabricated by RF magnetron sputtering. The show that the dominant mechanisms are Schottky emission at high temperatures (>498 K) in low electric fields (<1 MV/cm). The dynamic dielectric constant (□r) is close to 3.57 from the slope of Schottky plots. The extracted Al/HfO2 barrier-height and effective electronic mass in HfO2 films are about 1.03 eV and 0.9 m0. The study shows the area scaling and the voltage dependence of the time to breakdown TBD. The fraction of breakdown devices F is plotted on a Weibull scale. The Weibull fit of our data shows clearly that TBD scales with area, meaning that the breakdown sites are randomly distributed. The Weibull slope β of the breakdown for both the area dependence and the time to dielectric breakdown distribution was found to be β = 2.5. Estimated ten year lifetime has been projected to be -2.24 V.

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