本次研究使用熱蒸鍍將稠五苯沉積於熱生長300 nm的二氧化矽之重摻雜（p-type）矽基板上，並暴露於60Co加馬射線下接受輻射照射，接著探討稠五苯薄膜受輻射照射後在In-Plane（面內）與Plane Normal（面外）各向異性上的原子結構、電子結構、電阻率以及載子遷移率等變化。
利用國家同步輻射中心（NSRRC）的光束線來分析樣品；由X-ray繞射觀察到既使在3000 Gy輻射照射下的稠五苯薄膜與未受輻射照射的樣品相比其積分強度下降仍不超過10%，可能暗示著在結晶性、分子排序程度等結構方面擁有著不錯的輻射抗性；接著使用X-ray近吸收邊光譜學分析其電子結構，觀察到經過輻射照射後電子軌域的未佔據態提升，可能是經過輻射暴露後於稠五苯薄膜中產生了更多的能態缺陷來幫助載子傳輸擁有更多能量與空間的位置來躍遷使得導電性增加；亦或是在輻射暴露期間於稠五苯內部產生了許多的自由基或離子而導致載子濃度增加。
在量測稠五苯薄膜電性時，觀察到輻射照射後的面內電阻下降而面外電阻變化極小，因此利用霍爾效應確認薄膜載子濃度的改變，發現輻射照射後的載子濃度逐漸上升使得薄膜的導電度增加，且各向異性上的載子遷移率隨劑量增加而下降，可能是輻射照射後分子排序輕微變差所導致的。另外，藉著後退火處理嘗試恢復薄膜的初始特性，並利用XRD觀察到在較低劑量400 Gy的條件下其繞射峰強度恢復至原本的90%，但在3000 Gy的高劑量下並無改變，此結果可能是由於高劑量下所造成的永久性輻射損傷而導致的；而在電阻率方面僅能恢復至原本的30%，無法完全恢復至初始電阻率。
經過這次的實驗與分析，由於輻射照射後稠五苯薄膜電子特性的改變顯著，或許可以使稠五苯應用在高輻射區域中作為感測器，但後退火處理並無法讓電性完全的恢復，故作為可重複使用的輻射偵檢器，必須有更深入的討論與研究。

Pentacene thin films was prepared by thermal evaporation technique on a heavily p-type doped silicon substrate containing thermally grown 300 nm SiO2. And the sample was irradiated by using Co60 gamma source. The variation of atomic structure, electronic structure, resistivity and carrier mobility of pentacene film before and after irradiation were studied.
X-ray diffraction results showed that even after radiation to 3000 Gy, the degradation of integrated intensity of pentacene is less than 10% when compared to pristine sample, suggesting that the structure of pentacene remains robust. The electronic structure of pentacene films were analyzed by using near edge x-ray absorption spectroscopy. We noticed that in case of irradiated samples density of the unoccupied state increased might be due to some energy states created during irradiation to help carrier transport or increase in carrier concentration might be due to ions and free radicals formed during irradiation.
Electrical measurement results revealed a decrease in in-plane resistivity and a negligible change for plane-normal resistivity after irradiation. So we used Hall Effect measurement to determine carrier concentration. This result is consistent with XAS data in which an increase in carrier concentration after irradiation was also revealed. Mobility decrease might be due to the structural disorder present after irradiation. In addition, we observed from post-annealing treatment that in case of low dose, the XRD intensity gets recovered around 90% , whereas in case of high dose samples only slight change was observed which could be due to permanent defects created in the sample. Whereas the resistivity after post annealing treatment gets recovered by about 30%. Overall, the experimental results point to a possible use of pentacene for radiation sensor applications in the future.

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