早期奈米光觸媒主要應用於清潔與除汙環境領域。近幾年日本將此光觸媒技術應用於保護核反應器組件，發現可將二氧化鈦被覆在核反應器組件表面(例如304不□鋼)上，用來抑制組件遭受沿晶應力腐蝕龜裂(Intergranular Stress Corrosion Cracking, IGSCC)。利用核能電廠運轉時產生Cherenkov輻射，其產生的紫外光可激發屬N型半導體的二氧化鈦產生電子與電洞對，電洞可與水化學環境中的水分子產生氧化的水解反應，本實驗也發現明顯的陽極電流反應，達到類似混合電位理論(Mixed Potential Model, MPM)的效果來抑制金屬腐蝕。運轉中的核能電廠多採用加氫水化學(hydrogen chemistry, HWC)技術，來降低組件材料的電化學腐蝕電位，防制IGSCC的發生。然而HWC在較高注氫量下(高於0.4 ~ 0.6ppm)，會伴隨著運轉與停機時輻射劑量增加的副作用。本研究探討新穎的技術來利用二氧化鈦被覆的光觸媒效應，亦能有效降低金屬的腐蝕電位與腐蝕電流密度來抑制在沸水式反應器內部組件遭受IGSCC，同時也可降低在HWC中注氫的需求量。
本研究在模擬沸水式反應器(Boiling Water Reactor, BWRs)水化學環境下，針對不同的溶氧與溶氫條件及紫外光照射前與照射時候，進行電化學腐蝕電位測量(Electrochemical corrosion potential, ECP)與動態電位極化掃描(Electrochemical potentiodynamic polarization)，以及在常溫下的靜態交流阻抗分析(EIS)，來了解對304不□鋼試片施行銳鈦型二氧化鈦(Anatase)被覆與紫外光照射前與照射時候的電化學特性差異。在電化學分析之前，試片需經過敏化熱處理，接著在高溫純水溶氧濃度300ppb環境下預長氧化膜，此後採用動態循環熱水沉積法(hydrothermal deposition)，在三種不同被覆溫度條件下(90 ℃、150 ℃與280 ℃)對預長氧化膜試片進行96小時、粒徑為38 nm的二氧化鈦奈米顆粒被覆處理。在被覆處理前後對試片進行SEM、EDX、FIB、LRS、XRD與XPS表面分析，以及利用感應偶合電漿質譜儀(ICP-MS)的定量分析觀察二氧化鈦被覆量。
結果顯示，二氧化鈦被覆在預長氧化膜試片同時含有α-Fe2O3與Fe3O4的結構，並氧化膜呈現不均勻與不連續分佈。經由抑制性被覆後，由SEM與FIB影像以及EDX分析觀察到二氧化鈦在低溫90℃被覆下試片表面呈少量且不明顯的被覆效果，在150℃被覆下呈均勻分佈，而在高溫280℃被覆下呈現厚薄較不均勻但被覆面積較廣的情形。由ICP-MS分析的結果顯示90℃與150℃被覆下試片TiO2含量皆少於10 μg/cm2，高溫280℃被覆較接近文獻上利用化學注射法(Chemical injection)在相同被覆時間內所得TiO2含量，約22~33 μg/cm2。在Raman光譜與XRD繞射譜圖可發現在高溫280℃被覆後原來使用的銳鈦型(Anatase)二氧化鈦因熱水沉積法高溫高壓的環境而開始轉變成紅金型(Rutile)。另外，經二氧化鈦被覆試片照射UV光(波長250 nm)後，在不同溶氧濃度下的ECP下降程度可達約100 mV左右，而由高溫動態極化掃描的結果可發現被覆試片在照光前與照射時候的結果發現有明顯的水解氧化反應的陽極電流產生，足以證明照光後ECP下降的影響來自於光激發的效果，且腐蝕電流密度在照光時也有減少的趨勢，儘管極化曲線在未照光情形下對被覆二氧化鈦試片與預長氧化膜試片之間並沒有太大的差異，但這些結果仍顯示在高溫溶氧水環境底下，被覆二氧化鈦再結合施加照射UV光處理可以有效地降低304不□鋼的金屬腐蝕速率。

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